公开(公告)号：JPH0638110A

公开(公告)日：1994-02-10

申请号：JP18817292

申请日：1992-07-15

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: G06T1/00 ,  G06T7/60 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374 ,  G06F15/64

Abstract: PURPOSE:To provide the contour detection system realizing the contour detection in the picture processing technology in real time without scanning of a bias voltage. CONSTITUTION:A part surrounded by broken lines is one unit of circuit and the system is provided with two semiconductor light receiving elements 1,2 whose electrode structure is symmetrical to the left and right, a terminal 3 outputting an electric signal, and two wires 4, 5 receiving a bias voltage. Plural circuits C11-Cnn are arranged in two-dimension to form one contour detection system. Bias voltages +Vb, -Vb opposite in the polarity and equal in the amplitude are applied in common in advance to each longitudinal column so that unit circuits adjacent to each other have a common bias line. When no optical input is given or an optical input is given to both the light receiving elements 1, 2, no signal appears at the output terminal 3. When an input picture has a contour just on the unit circuit, a difference of the light intensity appears at the output terminal 3.

公开(公告)号：JPH05160517A

公开(公告)日：1993-06-25

申请号：JP31928491

申请日：1991-12-03

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  NAKAJIMA KAZUTOSHI ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO

IPC: H01S3/08 ,  H01S5/00 ,  H01S5/042 ,  H01S5/10

Abstract: PURPOSE:To enable the entitled element to applicate to a large power light emitting element, by making an electric field applied across both of the electrodes formed on a semi-insulating compound semiconductor keep a specified range during operation. CONSTITUTION:An example of confinement structure laminated in the thickness direction is shown. This is a double heterostructure. AlGaAs layer 2, a GaAs layer 3 and an AlGaAs layer 4 are laminated on a GaAs substrate 1. A part of the GaAs layer 3 is eliminated, and electrodes 5, 6 are formed so as to be connected with the GaAs layer 3. The GaAs layer 3 is an active layer, and made semi-insulating, as necessary, by diffusing impurities for forming a deep level. For adding resonance structure, it is necessary to sandwich the active layer by high reflection factor layers. An electric field applied across the electrodes 5 and 6 is kept to be in the range from 0.5kV/cm to 2.5kV/cm. Light emission caused by a flowing current is made to generate laser action in a resonator structure.

公开(公告)号：JP2010226071A

公开(公告)日：2010-10-07

申请号：JP2009136389

申请日：2009-06-05

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SAKAMOTO AKIRA ,  IIDA TAKASHI ,  YAMAMOTO AKINAGA ,  YAMAMURA KAZUHISA ,  NAGANO TERUMASA

IPC: H01L31/10 ,  H01L27/146

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-detecting element, using silicon, which has sufficient spectral sensitivity characteristics in the near-infrared wavelength band. SOLUTION: An n-type semiconductor substrate 1 is prepared, having a first main face 1a and a second main face 1b which face each other, and with a P + type semiconductor region 3 formed on the first main face 1a. At least the region opposing the P + type semiconductor region 3 of the second main face 1a of the n - type semiconductor substrate 1 is irradiated with pulsed laser light, and irregular recesses and protrusions 10 are formed. After the irregular recesses and protrusions 10 are formed, an accumulation layer 11 having a higher impurity density than that of the n - type semiconductor substrate 1 is formed on the second main face 1b of the n - type semiconductor substrate 1. After the accumulation layer 11 is formed, the n - type semiconductor substrate 1 is heat-treated. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在近红外波长带中具有足够的光谱灵敏度特性的硅的半导体光检测元件。 解决方案：制备n型半导体衬底1，其具有彼此面对的第一主面1a和第二主面1b以及形成在第一主面1a和第二主面1b上的P + / SP>型半导体区域3 第一主面1a。 至少与n - / SP>型半导体衬底1的第二主面1a的P + 型半导体区域3相对的区域用脉冲激光照射， 并形成突起10。 在形成不规则凹陷和突起10之后，在n - / SP>型半导体衬底1的第二主面1b上形成具有比n - 型半导体衬底1.在形成堆积层11之后，对n型半导体衬底1进行热处理。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JPH0738419A

公开(公告)日：1995-02-07

申请号：JP17573293

申请日：1993-07-15

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: H01L31/12 ,  H03K17/78 ,  H03K19/14 ,  H04B10/40 ,  H04B10/50 ,  H04B10/524 ,  H04B10/60 ,  H04B10/67 ,  H04B10/69 ,  H04B10/80 ,  H04B10/04 ,  H04B10/06 ,  H04B10/14 ,  H04B10/26 ,  H04B10/28

Abstract: PURPOSE:To minimize a code error rate by employing two semiconductor light receiving elements of symmetrical junction structure each formed by arranging a couple of Schottky electrodes opposite to each other for a light receiving circuit so as to make an output voltage waveform nearly equal to an original output waveform. CONSTITUTION:Two positive and negative consecutive current pulses with a time difference tw, from a sender side section circuit 5 are inputted to light emitting diodes 21, 22 in anti-parallel connection. The positive current pulse is converted into an optical signal by the light emitting diode 21 and the negative current pulse is converted into an optical signal with a delay of a time tw by the light emitting diode 22. The optical signals are inputted to semiconductor light receiving elements 11, 12 through separate optical transmission sections 31, 32 at a delay of a time tw. Since the positive bias voltage 41 is applied to the element 11 and a negative bias voltage 42 is applied to the element 12 respectively, a positive current pulse and a negative current pulse with a delay of the time tw are provided as an output from the elements 11, 12 respectively. They are two consecutive current pulses having a difference of the time tw at the connection terminal and the original voltage pulse having the pulse amplitude equivalent to the time difference tw is obtained at an output terminal 8 through an integration circuit 6.

公开(公告)号：JPH0738142A

公开(公告)日：1995-02-07

申请号：JP18276793

申请日：1993-07-23

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: H01L31/108

Abstract: PURPOSE:To prevent positive holes from being accumulated in a semiconductor substrate so as to enhance an infrared detector in output power by a method wherein light ray of wavelengths longer than those correspondent to the energy band gap of the semiconductor substrate are applied to the substrate to produce a photocurrent. CONSTITUTION:A P-type high concentration region 11 is formed on a part of a semiconductor substrate 1. A P-type ohmic contact metal alloy material is evaporated on the P-type region 11 for the formation of an electrode 21 which comes into ohmic contact with the P-type region 11. A metal thin film used for a Schottky junction electrode is evaporated on the same plate confronting the electrode 21 to form a Schottky junction electrode 2. Light ray 5 of wavelengths longer than those correspondent to the energy band gap of the semiconductor substrate 1 are made to incident on a gap between the ohmic contact electrode 21 and the Schottky junction electrode 2 to generate a photovoltaic current. A photovoltaic current accelerates carriers generated through an interband level with a high electrical field to efficiently collect holes into a P-type region. By this setup, an avalanche phenomenon being multiplied, an infrared detector of this constitution can be enhanced in output and response speed.

公开(公告)号：JPH06204552A

公开(公告)日：1994-07-22

申请号：JP128293

申请日：1993-01-07

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  SUZUKI TOMOKO ,  NAKAJIMA KAZUTOSHI ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI

IPC: H01L31/10 ,  H01L31/107

Abstract: PURPOSE:To obtain an element which can operate at a high speed, by a method wherein at least either an electrode of a cathode or an anode is made to have ohmic properties for both of majority carriers and minority carriers. CONSTITUTION:An anode 201 and a cathode 202 are formed on the opposite surfaces of a semiinsulative GaAs substrate 101 respectively. The anode 201 is made a thin film so that an infrared light hmu can be applied sufficiently onto an interface between the anode and a high-resistance semiconductor 101, and has a light-transmitting property. As for the cathode 202, P-type GaAs 301 and N-type GaAs 302 are formed checkerwise at 20mum pitches in semiinsulative GaAs and ohmic properties for electrons are ensured in an N-type part, while the ohmic properties for holes are ensured in a P-type part. According to this constitution, a photoconductive element thus prepared is a photodetector which makes a response at a high speed while maintaining a high infrared sensitivity.

公开(公告)号：JPH0644616B2

公开(公告)日：1994-06-08

申请号：JP14575089

申请日：1989-06-08

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: H01L31/10 ,  H01L27/14 ,  H01L33/00 ,  H01P3/02

公开(公告)号：JPH0653256A

公开(公告)日：1994-02-25

申请号：JP20132392

申请日：1992-07-28

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  NAKAJIMA KAZUTOSHI ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO

IPC: H01L29/762 ,  H01L21/339 ,  H01L29/796

Abstract: PURPOSE:To provide a semiconductor device having a plurality of electrodes provided on a semi-insulating semiconductor with a carrier density equal to or lower than a predetermined value, and means for sequentially applying an electric field having an intensity equal to or greater than a specific value between adjoining electrodes, so that the device functions in the same manner as an electronic multiplier tube. CONSTITUTION:A plurality of electrodes 21 are provided on a semiinsulating semiconductor 11 having a carrier density of 10 cm or below. There is means for sequentially applying an electric field having an intensity of 0.5KV/cm or greater between the adjoining electrodes 21. The electrodes 21 made of a material having a charge multiplying characteristic. For example, the electrodes 2i (i=1 to 5) are provided on a semi- insulating GaAs substrata 11, and a constant divided voltage, obtained by voltage distributing resistors 4i, is applied between the adjoining electrodes 2i via series resistors 3i. An electrode 20 as an input terminal and an electrode 26 for outputting electrons (multiplied electrons) are formed on the surface of the semi-insulating substrate 11, with a power supply 50 connected to the electrode 20 and an output terminal OUT connected to the electrode 20. The electrodes 20 and 26 have an ohmic contact with each other on the semi-insulating substrate 11.

公开(公告)号：JPH065199A

公开(公告)日：1994-01-14

申请号：JP16483592

申请日：1992-06-23

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  NAKAJIMA KAZUTOSHI ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO

IPC: H01J1/34

Abstract: PURPOSE:To improve the sensitivity of photoelectron emission by sealing the light generated by the plasma emission in a constant area. CONSTITUTION:When the light hnu1 is irradiated to an internal positive electrode 21, a positive hole 41 is excited, and in the case where the optical energy thereof is higher than the potential barrier, the positive hole 41 is filled from the positive electrode 21 to a semi-conductor 11. Internal electrodes 21, 22 are biassed by a power source 31. A large quantity of electron and positive hole are generated by the doubling of electrical collapse, which is generated by the filling of the positive hole 41, and the positive holes 41 are carried in the negative electrode 22 direction. At this stage, the semi-conductor 11 is filled with electron 42 from the negative electrode 22 to restrict the generation of space electric charge to raise the density of carrier in the semiconductor 11, and electronic positive hole plasma exists in the electrical collapse doubling area, and the light emission hnu2 is observed. The light hnu2 is absorbed by the semi-conductor 11 again to generate the photoelectron 43. As a result, the electron 42, which is filled from the negative electrode 22 by the irradiation of the light hnu1, and the photoelectron 43 are synthesized on the positive electrode side surface of the semi-conductor 11 to double the electron.

公开(公告)号：JPH05152588A

公开(公告)日：1993-06-18

申请号：JP31804391

申请日：1991-12-02

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  NAKAJIMA KAZUTOSHI ,  SUZUKI TOMOKO ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI

IPC: H01L31/00 ,  H01L29/861

Abstract: PURPOSE:To perform inside electron multiplication by providing a semiconductor with a pair of electrodes while impressing prescribed voltage between said electrodes. CONSTITUTION:For instance, CrO-doped semiinsulating Gaps 1-1, is used as Gaps (semiinsulating III-V compound semiconductor) of high resistance while a pair of electrodes 1-4 having ohmic junction by AuGe on both surfaces thereof are formed in the thickness direction of a semiconductor 1-1. An electric field of 2.5kV/cm to 0.5kV/cm is impressed between these electrodes 1-4 by accelerating power supply 3-1, and an operation point is set up on the point whereto a current to be easily cut off by a quadrature magnetic field flows between the electrodes 1-4. At this time, the semiconductor 1-1 changes into a semiconductor having an inner electron multiplying function. Thereby, inner electron multiplication becomes possible.