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11.发明专利
公开(公告)号：AU2002331069A1
公开(公告)日：2003-03-03
申请号：AU2002331069
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , HAJI-SHEIKH MICHAEL J , HAWKINS ROBERT M , BIARD JAMES R
Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
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公开(公告)号：AU2002356039A1
公开(公告)日：2003-03-03
申请号：AU2002356039
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： BIARD JAMES R , RABINOVICH SIMON , HAWKINS ROBERT M , GUENTER JAMES K , HAJI-SHEIKH MICHAEL J
Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
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公开(公告)号：AU2002323125A1
公开(公告)日：2003-03-03
申请号：AU2002323125
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： HAWKINS ROBERT M , HAJI-SHEIKH MICHAEL J , GUENTER JAMES K , BIARD JAMES R
Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
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公开(公告)号：CA2457690A1
公开(公告)日：2003-02-27
申请号：CA2457690
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： BIARD JAMES R , HAJI-SHEIKH MICHAEL J , GUENTER JAMES K , HAWKINS ROBERT M
Abstract: Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control ca n be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) a re defined by trenches (1725) that operate as nonconductive areas (1750). Metho ds of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.
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15.发明专利
公开(公告)号：CA2457685A1
公开(公告)日：2003-02-27
申请号：CA2457685
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： GUENTER JAMES K , BIARD JAMES R , HAWKINS ROBERT M , HAJI-SHEIKH MICHAEL J
Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1240) having a substrate (1240), at least one active layer (1240) and at least one surface layer (1240), Current control can be achieved through the formation of patterns ( 1240) surrounding contacts (1215), said patterns (1240) including insulating implants and/or sacrificia l layers formed between active devices represented by said contacts (1215). Current flows through active regions (1260) associated with said contacts (1215) and active devices. Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
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Patent Agency Ranking
公开(公告)号：CA2457680A1
公开(公告)日：2003-02-27
申请号：CA2457680
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： RABINOVICH SIMON , GUENTER JAMES K , BIARD JAMES R , HAWKINS ROBERT M , HAJI-SHEIKH MICHAEL J
Abstract: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices ar e presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each si de of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described fo r supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn - in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices ; applying electrical and physical contact using a low er contact plate (910) to a substrate surface of said semiconductor wafer ; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates ; monitoring and controlling electrical powe r (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria ; removing electrical power at completion of said period (955) ; and removing electrical and physical contact to said semiconductor wafer (965).
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公开(公告)号：CA2457675A1
公开(公告)日：2003-02-27
申请号：CA2457675
申请日：2002-08-12
Applicant: HONEYWELL INT INC
Inventor： HAJI-SHEIKH MICHAEL J , BIARD JAMES R , HAWKINS ROBERT M , GUENTER JAMES K
Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) form ed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.
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公开(公告)号：CA2410569A1
公开(公告)日：2001-11-29
申请号：CA2410569
申请日：2001-05-22
Applicant: HONEYWELL INT INC
Inventor： TATUM JIMMY A , GUENTER JAMES K
Abstract: A system and method for VCSEL (vertical cavity surface emitting laser) polarization control is disclosed, including methods and apparatus comprisin g a component package (302, 304) having self-aligning features (316, 318), for indicating an alignment axis (320, 322), and upper surface aperture (314) formed therein, a vertical cavity surface emitting laser device (308) having two emission polarizations (204) normal to one another, disposed within the component package and aligned such that each emission polarization is at abo ut 45 degrees with respect to the alignment axis, and a linear polarization element (400, 402, 406) having a polarization direction (206), spanning the aperture and disposed such that the polarization direction is parallel to th e alignment axis.
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公开(公告)号：AT302954T
公开(公告)日：2005-09-15
申请号：AT02725631
申请日：2002-04-12
Applicant: HONEYWELL INT INC
Inventor： TATUM JIMMY A , GUENTER JAMES K
Abstract: A laser optical sensing system and method for detecting target characteristics are disclosed. The system includes a laser source with at least two emission apertures from which laser signals are emitted. The system also includes at least one detector, which is operationally responsive to the laser source. The system includes a microprocessor that is operationally coupled to the detector(s) for processing signal data, a memory accessible by the microprocessor for storing target characteristics (e.g., unique signals), and a software module accessible by the microprocessor for enabling system training and detection operations. In operation, the laser source emits into an environment at least two laser signals, one from each emission aperture. The detector detects the laser signals after the signals pass through the environment, which is occupied by a target, and the microprocessor determines target characteristics based on the matching of laser signals received by the detector(s) and characteristics stored in memory.
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公开(公告)号：AT300747T
公开(公告)日：2005-08-15
申请号：AT02762056
申请日：2002-04-12
Applicant: HONEYWELL INT INC
Inventor： TATUM JIMMY A , GUENTER JAMES K
Abstract: Multiple laser optical sensing systems and methods for detecting target characteristics are disclosed. The present invention detects the presence of an object in a monitored area using an laser-based object detection system and may selectively cause a controlled response when an object is detected. At least two laser signals may be emitted into a monitored area using a vertical cavity surface emitting laser structure. At least one detector receives any laser signals not blocked by an object. The system determines the presence or absence of an object in the environment using a microprocessor and determines the objects characteristics by comparing received laser signals associated with it to object characteristics stored in a memory. The system may selectively causing a controlled response in accordance with the determination of object characteristics and/or correlating response criteria.
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