公开(公告)号：DE1465748A1

公开(公告)日：1969-03-06

申请号：DE1465748

申请日：1964-12-23

Applicant: IBM

Inventor： AMES IRVING ,  LELAND CASWELL HOLLIS

IPC: H01L21/316 ,  H01L21/3205 ,  H01L23/485 ,  H01L23/532

Abstract: 1,088,679. Semi-conductor device. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 21, 1964 [Dec. 26, 1963], No. 51834/64. Heading H1K. The connections to the electrodes of a semiconductor device are produced by depositing a first aluminium oxide layer on the substrate, depositing a conductive pattern, of a material having a similar coefficient-of expansion to that of silicon oxide, to make contact with the device, and depositing a second layer of aluminium oxide over the conductive pattern. As shown the electrodes of a transistor or diode 12 diffused into a silicon substrate 10 are contacted by depositing an aluminium oxide layer 14 over the entire surface except the contact regions, and depositing a contact strip 16 of tungsten or molybdenum over the layer A small region 22 of aluminium oxide is deposited across the first strip and a conductive strip 20 is deposited over this to form an insulated crossing. Both conductive strips are then protected with a further aluminium oxide layer 24. The end portion 18 of conductive strip 16 is left exposed to allow external connections to be made by soldering or by a pressure contact. The aluminium oxide layers may be produced by vapour deposition of aluminium in a high oxygen partial pressure, by thermal evaporation produced by electron bombardment heating of Al 2 O 3 , or by reactive sputtering of aluminium in an oxygen atmosphere. The conductive strips may be deposited by sputtering or thermal evaporation. Reference has been directed by the Comptroller to Specification 900,334.

公开(公告)号：DE2001515A1

公开(公告)日：1970-08-27

申请号：DE2001515

申请日：1970-01-14

Applicant: IBM

Inventor： AMES IRVING ,  EDWARD HORSTMANN RICHARD ,  MAX D HEURLE FRANCOIS

IPC: H01L23/52 ,  H01B1/00 ,  H01B1/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/485 ,  H01L27/00 ,  H01L29/43 ,  H01L19/00

Abstract: This disclosure provides a copper doped aluminum conductive thin film stripe for use as a current-carrying member in a solid state microelectronic configuration which has substantial resistance against circuit failure due to damage caused by current-induced mass transport in the stripe. It has also been discovered for the practice of this invention that the addition of a relatively small amount of copper to an aluminum stripe together with a suitable heat-treatment enhances the extent of its lifetime during current conduction. Preferably, the percentage copper is from the neighborhood of 0.1 percent to the neighborhood of 10 percent by weight composition of copper in the aluminum and with an annealing heat-treatment in the approximate range of 250 DEG C to 560 DEG C. However, for certain operational conditions of the stripe a selected percent less than 54 percent copper by weight composition is advantageous.

公开(公告)号：CA768943A

公开(公告)日：1967-10-10

申请号：CA768943D

Applicant: IBM

Inventor： CASWELL HOLLIS L ,  AMES IRVING

公开(公告)号：CA750886A

公开(公告)日：1967-01-17

申请号：CA750886D

Applicant: IBM

Inventor： AMES IRVING