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    5.
    发明专利
    未知

    公开(公告)号：DE2361804A1

    公开(公告)日：1974-07-04

    申请号：DE2361804

    申请日：1973-12-12

    Applicant: IBM

    Inventor： AMES IRVING

    IPC: H01L39/02 ,  H01L39/22 ,  H01V11/00

    Abstract: A Josephson tunnelling circuit is fabricated by forming layers of insulation and superconducting metallization on a substrate. The layers form Josephson tunnelling junctions, superconducting lines, superconducting contacts and other elements which may be needed. Josephson tunnelling junctions are formed by three layers, a thin tunnelling oxide between two superconducting layers. Superconducting contacts are formed between either of the two superconducting layers and an overlying third superconducting layer. The latter layer includes a metal, preferably indium, which has a free energy of oxide formation which is at least as high - or higher - than the alloys forming the first and second layers.

    6.
    发明专利
    未知

    公开(公告)号：DE1446186A1

    公开(公告)日：1968-11-14

    申请号：DE1446186

    申请日：1962-11-24

    Applicant: IBM

    Inventor： AMES IRVING

    IPC: C23C14/04 ,  G11C11/44 ,  H01B1/00 ,  H01L39/24 ,  H01L49/02 ,  H05K3/14

    Abstract: In a vapour deposition process of forming an electrical circuit comprising a series of superposed thin films deposited successively on a substrate, each film is deposited through a pair of masks superimposed one behind the other, one mask, defining a common dimension of all the films, e.g. the width, being used during deposition of all the films together with alternative ones of a series of second masks which define the other dimension, e.g. length of said films. The method is particularly described in relation to the fabrication of an in line cryotron as shown in Figs. 2A and 2B which comprises a substrate 38, a gate conductor 88 of tin, control conductors 90, 92 of lead, insulating layers 94, 96 of silicon monoxide and connectors 98, 100, 102, 104 and 106, 108. The apparatus for the vapour deposition process is shown in Fig. 1A and comprises a vacuum chamber 10, evaporation sources 30, 32, 34, a substrate 38 and a mask holder 42 which is slideably engaged with a mask support 40 so that a selected mask 44, 46, 48 or 50 may be located over mask 60 which is the first mask positioned over substrate 38. The mask holder 42 is operated by a connecting rod 62 and the mask 60 which determines the common dimension of the deposits is first located over the substrate 38 and is held in position by a magnet 66. Mask 44 is then selected and positioned adjacent mask 60 by means of the rod 62 and in this position the first film is evaporated and deposited in the required shape determined by the two masks. The further layers are then formed by positioning the required mask over mask 60 until the required number or layers have been formed.

    Improvements in or relating to electrical circuits
    7.
    发明专利
    Improvements in or relating to electrical circuits 未知

    公开(公告)号：GB1088679A

    公开(公告)日：1967-10-25

    申请号：GB5183464

    申请日：1964-12-21

    Applicant: IBM

    Inventor： AMES IRVING ,  CASWELL HOLLIS LELAND

    IPC: H01L21/316 ,  H01L21/3205 ,  H01L23/485 ,  H01L23/532

    Abstract: 1,088,679. Semi-conductor device. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 21, 1964 [Dec. 26, 1963], No. 51834/64. Heading H1K. The connections to the electrodes of a semiconductor device are produced by depositing a first aluminium oxide layer on the substrate, depositing a conductive pattern, of a material having a similar coefficient-of expansion to that of silicon oxide, to make contact with the device, and depositing a second layer of aluminium oxide over the conductive pattern. As shown the electrodes of a transistor or diode 12 diffused into a silicon substrate 10 are contacted by depositing an aluminium oxide layer 14 over the entire surface except the contact regions, and depositing a contact strip 16 of tungsten or molybdenum over the layer A small region 22 of aluminium oxide is deposited across the first strip and a conductive strip 20 is deposited over this to form an insulated crossing. Both conductive strips are then protected with a further aluminium oxide layer 24. The end portion 18 of conductive strip 16 is left exposed to allow external connections to be made by soldering or by a pressure contact. The aluminium oxide layers may be produced by vapour deposition of aluminium in a high oxygen partial pressure, by thermal evaporation produced by electron bombardment heating of Al 2 O 3 , or by reactive sputtering of aluminium in an oxygen atmosphere. The conductive strips may be deposited by sputtering or thermal evaporation. Reference has been directed by the Comptroller to Specification 900,334.

    CONNECTION FOR SUPERCONDUCTIVE CIRCUITRY
    8.
    发明专利
    CONNECTION FOR SUPERCONDUCTIVE CIRCUITRY 未知

    公开(公告)号：DE3068906D1

    公开(公告)日：1984-09-13

    申请号：DE3068906

    申请日：1980-11-20

    Applicant: IBM

    Inventor： AMES IRVING ,  ANACKER WILHELM ,  GREBE KURT RUDOLPH ,  KIRCHER CHARLES JOHN

    IPC: H01L27/18 ,  H01L23/485 ,  H01L23/532 ,  H01L39/02 ,  H01L39/22

    Abstract: Circuit connection for electrical circuitry, and particularly superconducting circuits including Josephson tunnelling devices, wherein solder lands can be used to make electrical connection to electric lines without interdiffusion between the lines and the solder. … To avoid the interdiffusion problem, a laterally extending metallic layer (18) is used as a diffusion barrier between the solder land (28) and the electrical line (M) which can be a superconducting line. The diffusion layer is comprised of refractory metal and has a first portion electrically contacting the solder land and a second, laterally displaced portion, electrically contacting the electrical line. An insulating layer (22) on the diffusion barrier layer separates the solder land and the electrical line. In a specific embodiment, the diffusion barrier is comprised of niobium, and the solder is a low melting point alloy, typically comprised of indium, bismuth, and tin.

    CONTACT TECHNIQUE FOR ELECTRICAL CIRCUITRY
    9.
    发明专利
    CONTACT TECHNIQUE FOR ELECTRICAL CIRCUITRY 未知

    公开(公告)号：CA1142264A

    公开(公告)日：1983-03-01

    申请号：CA365924

    申请日：1980-12-02

    Applicant: IBM

    Inventor： AMES IRVING ,  ANACKER WILHELM ,  GREBE KURT R ,  KIRCHER CHARLES J

    IPC: H01L27/18 ,  H01L23/485 ,  H01L23/532 ,  H01L39/02 ,  H01L39/22

    Abstract: CONTACT TECHNIQUE FOR ELECTRICAL CIRCUITRY . In electrical circuitry, and particularly superconducting circuitry including Josephson tunnelling devices, it is often necessary to provide solder contacts to electrical lines, where the electrical lines would be destroyed if there were interdiffusion between the lines and the solder. To avoid this problem, a laterally extending metallic layer is used as a diffusion barrier between the solder land and the electrical line which can be a superconducting line. The diffusion barrier is comprised of a refractory metal which has a first portion electrically contacting the solder land and a second, laterally displaced portion electrically contacting the electrical line. An insulating protective layer on the diffusion barrier layer separates the solder land and the electrical line. In a specific embodiment, the superconducting electrical line is comprised of an alloy of lead while the diffusion barrier is comprised of niobium, and the solder alloy is a low melting point alloy, typically comprised of indium, bismuth,

    SUPERCONDUCTING CONTACTS
    10.
    发明专利
    SUPERCONDUCTING CONTACTS 未知

    公开(公告)号：CA1024659A

    公开(公告)日：1978-01-17

    申请号：CA188786

    申请日：1973-12-21

    Applicant: IBM

    Inventor： AMES IRVING

    IPC: H01L39/02 ,  H01L39/22

    Abstract: A Josephson tunnelling circuit is fabricated by forming layers of insulation and superconducting metallization on a substrate. The layers form Josephson tunnelling junctions, superconducting lines, superconducting contacts and other elements which may be needed. Josephson tunnelling junctions are formed by three layers, a thin tunnelling oxide between two superconducting layers. Superconducting contacts are formed between either of the two superconducting layers and an overlying third superconducting layer. The latter layer includes a metal, preferably indium, which has a free energy of oxide formation which is at least as high - or higher - than the alloys forming the first and second layers.

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