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Patent Agency Ranking
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公开(公告)号：DE1521316A1
公开(公告)日：1969-08-21
申请号：DE1521316
申请日：1965-09-14
Applicant: IBM
Inventor： HAROLD BLUMBERG REX , LELAND CASWELL HOLLIS , CHIOU CHARLES
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公开(公告)号：DE1465748A1
公开(公告)日：1969-03-06
申请号：DE1465748
申请日：1964-12-23
Applicant: IBM
Inventor： AMES IRVING , LELAND CASWELL HOLLIS
IPC: H01L21/316 , H01L21/3205 , H01L23/485 , H01L23/532
Abstract: 1,088,679. Semi-conductor device. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 21, 1964 [Dec. 26, 1963], No. 51834/64. Heading H1K. The connections to the electrodes of a semiconductor device are produced by depositing a first aluminium oxide layer on the substrate, depositing a conductive pattern, of a material having a similar coefficient-of expansion to that of silicon oxide, to make contact with the device, and depositing a second layer of aluminium oxide over the conductive pattern. As shown the electrodes of a transistor or diode 12 diffused into a silicon substrate 10 are contacted by depositing an aluminium oxide layer 14 over the entire surface except the contact regions, and depositing a contact strip 16 of tungsten or molybdenum over the layer A small region 22 of aluminium oxide is deposited across the first strip and a conductive strip 20 is deposited over this to form an insulated crossing. Both conductive strips are then protected with a further aluminium oxide layer 24. The end portion 18 of conductive strip 16 is left exposed to allow external connections to be made by soldering or by a pressure contact. The aluminium oxide layers may be produced by vapour deposition of aluminium in a high oxygen partial pressure, by thermal evaporation produced by electron bombardment heating of Al 2 O 3 , or by reactive sputtering of aluminium in an oxygen atmosphere. The conductive strips may be deposited by sputtering or thermal evaporation. Reference has been directed by the Comptroller to Specification 900,334.
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公开(公告)号：DE1515308A1
公开(公告)日：1969-09-11
申请号：DE1515308
申请日：1966-11-12
Applicant: IBM
Inventor： LELAND CASWELL HOLLIS
Abstract: In a process for depositing the thin film of a material (e.g. Ni-Cr alloys, Al or Au) on a substrate by sputtering, e.g. for making a thin film resistor element, the thickness of the film is monitored by measuring the ion charge to the target. The sputtering gas (Av) and the non active gas (H2) within the chamber must be brought to predetermined ratios thereof to establish a known sputtering yield per incident ion. In Fig.1 the targets 9 and 11 are placed opposite substrates 25 which are supported on a rotatable octagonal structure 23 and there are annular shutter elements 29 and 29' to protect substrates which are not being sputtered at any given time. The ion charge to target 9 is measured by the integrating circuit 49 which actuates switch 51 when a layer of the desired thickness has been formed. The target 11 and its associated machinery is used for depositing a protective layer of Al, or Au over the resistor of Ni-Cr alloy. A process of applying resist, etching and further sputtering for the manufacture of circuit arrangements is also disclosed.
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公开(公告)号：DE1521311A1
公开(公告)日：1969-08-21
申请号：DEI0028269
申请日：1965-06-02
Applicant: IBM
Inventor： LELAND CASWELL HOLLIS , VINCENT GREGOR LASRENCE , MCGEE HANSEL
Abstract: A continuous thin film of material is vapour deposited on selected areas of a substrate having an organic surface, the selected areas on which deposition takes place being first irradiated in such a way that the sticking coefficient of these areas is greater than that of the remainder of the surface. The film materials deposited may be metals such as Sn, Pb, In, Ag or chemical compounds including semi-conductors such as PbS and CdS. The organic surface of the substrate may be formed by vapour depositing organic material such as silicone oil, bisphenal A-epichlorohydrin, resorcinol diglycidyl ether, methyl phenyl silaxane, or by adsorption of butyl methacrylate, vinyl acetate or methyl methacrylate to a thickness of 500 rA. The irradiation may be effected by electron beam or photolytically and the organic material is thus polymerized. The untreated i.e. unpolymerized portions of the organic surface may be polymerized by irradiation after deposition on the film material and a further outer layer of organic material may be vapour deposited on the film material. The process may be carried out in the apparatus shown in Figure 4. A substrate holder 29 pivoted on 31 in position A is located above evaporation sources 37, 39 and 41, is controlled by temperature regulators 42, and also exposed to electron beam from gun 43. The electron gun is programmed to supply the electron beam on substrate 9 in the required pattern after evaporation of the organic material from evaporator 41. Alternatively when holder 29 is rotated to position B the optical system 51 is used to effect photolytic polymerization in the required pattern; butyl methacrylate, vinyl acetate or methyl methacrylate in gaseous form being introduced at 59. The substrate may be cooled by coils 161. In the photolytic process it is preferred to illuminate the whole substrate surface with ultraviolet light to polymerize the surface and then to irradiate the selected areas with a light pattern of higher energy to produce the higher sticking coefficient. In an alternative method a negative pattern can be formed by using the irradiation to reduce the sticking coefficient of selected portions. Thus with a polymeric film of high sticking coefficient with a cover layer with only selected portions treated by the optical system 51, the pressure in the vacuum chamber may be reduced to desorb the unreacted portions of said cover layer to reexpose the previously deposited polymeric film.
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