公开(公告)号：CA1261785A

公开(公告)日：1989-09-26

申请号：CA504799

申请日：1986-03-24

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA S

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  C23F1/02 ,  C23F1/12 ,  H01L21/308

Abstract: METHOD FOR ETCH PROFILE CONTROL A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the reactive species is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope.