公开(公告)号：DE3477022D1

公开(公告)日：1989-04-13

申请号：DE3477022

申请日：1984-12-11

Applicant: IBM

Inventor： CHEN LEE ,  LANKARD JOHN ROBERT ,  MATHAD GANGADHARA SWAMI

IPC: C23F4/00 ,  C23F4/02 ,  C23F4/04 ,  H01L21/302 ,  H05K3/02 ,  B23K26/18

Abstract: Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCi laser at 222 nm or ArF laser at 193 nm or F 2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.

公开(公告)号：DE3584297D1

公开(公告)日：1991-11-14

申请号：DE3584297

申请日：1985-01-17

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA SWAMI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/306

Abstract: A method of controlling the etch rate ratio of SiO 2 photoresist (PR) in a quartz planarization etch back process involves etching with a gaseous mixture containing CF 4 and either CHF 3 or C x F y with x > 1 or O 2 . The preferred SiO 2 /PR ratio of 1.2 = 0.1 is obtained by either adding CHF 3 to decrease the etch rate of the PR or by adding O 2 to increase the etch rate of the PR.

公开(公告)号：DE3581295D1

公开(公告)日：1991-02-21

申请号：DE3581295

申请日：1985-01-17

Applicant: IBM

Inventor： CHEN LEE ,  KHOURY HENRI ANTOINE ,  SEYMOUR HARLAN RICHARDSON

IPC: H01L21/302 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/306 ,  H01J37/31

Abstract: A method of plasma etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated. In this manner, all wafers in a batch of wafers being etched reach end point while at the same time, the amount of over etching is greatly minimized.

公开(公告)号：DE3689342T2

公开(公告)日：1994-05-19

申请号：DE3689342

申请日：1986-04-11

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA SWAMI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/306

公开(公告)号：DE3568513D1

公开(公告)日：1989-04-06

申请号：DE3568513

申请日：1985-04-17

Applicant: IBM

Inventor： CHEN LEE ,  HENDRICKS CHARLES JOSEPH ,  MATHAD GANGADHARA SWAMI ,  POLONCIC STANLEY JOHN

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/306

公开(公告)号：CA1260365A

公开(公告)日：1989-09-26

申请号：CA505365

申请日：1986-03-27

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA S

IPC: H01L21/302 ,  H01L21/3065 ,  C30B33/00 ,  H01L21/467

Abstract: FI9-83-090 ANISOTROPIC SILICON ETCHING IN FLUORINATED PLASMA A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment, the etching ambient is a mixture of either NF3 or SF6, an inert gas such as nitrogen, and a polymerizing gas such as CHF3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.

公开(公告)号：DE3474044D1

公开(公告)日：1988-10-20

申请号：DE3474044

申请日：1984-12-11

Applicant: IBM

Inventor： CHEN LEE ,  CHUANG TUNG JUNG ,  MATHAD GANGADHARA SWAMI

IPC: B41M5/26 ,  C04B41/91 ,  C23F4/02 ,  H05K3/02 ,  B23K26/18

Abstract: Disclosed is a method of etching a metallized substrate by laser radiation. The substrate is exposed to a selected gas which spontaneously reacts with the metal forming a solid reaction product with the metal by a partial consumption of the metal. A beam of radiation of a wavelength suitable for absorption by the reaction product and/or by the metal thereunder is applied in a desired pattern to vaporize the reaction product and thereby selectively etch the metal.

公开(公告)号：DE3689342D1

公开(公告)日：1994-01-13

申请号：DE3689342

申请日：1986-04-11

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA SWAMI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/306

公开(公告)号：DE3679933D1

公开(公告)日：1991-08-01

申请号：DE3679933

申请日：1986-04-30

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA SWAMI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31 ,  H01L21/60

Abstract: The method comprises providing a mask layer (14) upon said layer (10) having a mask opening (16) of the desired bottom-most dimension of said opening (18) to be etched; placing said mask covered layer (10) within an etching reactor with a short species residence time; and performing a reactive ion etching process in said reactor, said process including changing the etching species at appropriate times during the etching of said opening (18) in said layer (10). … Preferably the layer (10) comprises an insulating material and the desired wall profile is advised by changing the percentage gas concentration of a reactive species at least at one predetermined point during the etching process. … With the method the wall profile of said etched opening (18) can be controlled precisely.

公开(公告)号：DE3676222D1

公开(公告)日：1991-01-31

申请号：DE3676222

申请日：1986-04-11

Applicant: IBM

Inventor： CHEN LEE ,  MATHAD GANGADHARA SWAMI

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  G01N27/00 ,  C23F4/00

Abstract: Plasma potential monitoring during a plasma etching process is accomplished by measuring the RF voltage at an electrode of, for example, a high pressure, high plasma density, symmetric single wafer reactor. The plasma potential is indicative of the plasma density, which has a high sensitivity to secondary electron emission from a wafer surface and yields both process etching endpoint and diagnostic information for a wide variety of processes and process conditions.