公开(公告)号：DE102004013926B4

公开(公告)日：2007-01-04

申请号：DE102004013926

申请日：2004-03-22

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： BERGNER WOLFGANG ,  BEINTNER JOCHEN ,  CONTI RICHARD A ,  KNORR ANDREAS ,  WEIS ROLF

IPC: H01L27/108 ,  H01L21/8242 ,  H01L29/94

Abstract: The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer.

公开(公告)号：DE102004013926A1

公开(公告)日：2004-10-21

申请号：DE102004013926

申请日：2004-03-22

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： BERGNER WOLFGANG ,  BEINTNER JOCHEN ,  CONTI RICHARD A ,  KNORR ANDREAS ,  WEIS ROLF

IPC: H01L21/8242 ,  H01L29/94 ,  H01L27/108

Abstract: The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer.

公开(公告)号：AU2002323112A1

公开(公告)日：2003-03-10

申请号：AU2002323112

申请日：2002-08-08

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： EDELSTEIN DANIEL ,  LEE GILL YONG ,  CONTI RICHARD A

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L21/02

Abstract: A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.