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    DEVICES USING HIGH T -SUPERCONDUCTORS AND METHOD FOR MAKING THE SAME
    12.
    发明专利
    DEVICES USING HIGH T -SUPERCONDUCTORS AND METHOD FOR MAKING THE SAME 未知

    公开(公告)号：CA1312147C

    公开(公告)日：1992-12-29

    申请号：CA563566

    申请日：1988-04-07

    Applicant: IBM

    Inventor： CLARK GREGORY J ,  GAMBINO RICHARD J ,  KOCH ROGER H ,  LAIBOWITZ ROBERT B ,  MARWICK ALAN D ,  UMBACH CORWIN P

    IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H01L39/14

    Abstract: YO987-028 DEVICES USING HIGH Tc SUPERCONDUCTORS AND METHOD FOR MAKING THE SAME A superconducting device operable at temperatures in excess of 30.degree.K and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high Tc superconducting material, the SQUID device being operable at temperatures in excess of 60.degree.K. High energy beams, for example ion beams, are used to convert selected portions of the high Tc superconductor to nonsuperconducting properties so that the material now has both superconducting regions and nonsuperconducting regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.

    15.
    发明专利
    未知

    公开(公告)号：FR2410361A1

    公开(公告)日：1979-06-22

    申请号：FR7828299

    申请日：1978-09-26

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  GAMBINO RICHARD J ,  HARPER JAMES M

    IPC: C23F4/00 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/30 ,  H01J37/20

    Abstract: Bombardment some intermetallic compounds above a sufficient target voltage Vo can be used for etching substrates. Etching a substrate located in an evacuated chamber involves bombardment of an intermetallic compound or alloy comprising for example Au, Pt, etc. and a metallic element such as Eu, La, Cs, etc. with ions so that a large flux of negative Au, Pt, etc. ions is produced which etches a substrate located nearby. Such bombardment is achieved by placing an Au, Pt, etc. intermetallic composition target in a sputtering chamber using an argon sputtering gas, located opposite from a substrate. A gold alloy or compound target can be SmAu, EuAu, LaAu, CsAu, etc. The target of Au, Pt, etc. and a rare earth element, etc. is bombarded by sputtering gas atoms excited by RF or D.C. energy, creating negative metal ions by sputtering. Instead of depositing upon the substrate, the negative ions cause a cascade of energetic sputtering gas atoms and metal atoms to etch the substrate surface directly beneath the target as outlined by ground shields. Outside that region negative ion and rare earth metals deposit on the substrate. Bombardment with an ion gun, neutral atoms or energetic particle sources or an ionic molecular source may produce negative ions. A use is ion milling. A target material is useful as a negative ion source of metal B in an intermetallic compound of metals A and B if A has ionization potential IA and B has electron affinity EAB such that IA-EAB > about 3.4 electron volts or if there is a electronegativity difference DELTA X greater than about 2.55.

    METHOD OF MAKING AMORPHOUS SEMICONDUCTOR THIN FILMS BY SUBLIMATION
    19.
    发明专利
    METHOD OF MAKING AMORPHOUS SEMICONDUCTOR THIN FILMS BY SUBLIMATION 未知

    公开(公告)号：CA997483A

    公开(公告)日：1976-09-21

    申请号：CA186209

    申请日：1973-11-20

    Applicant: IBM

    Inventor： GAMBINO RICHARD J

    IPC: H01L45/00 ,  C03C3/32 ,  C03C4/00 ,  C23C14/00 ,  C23C14/24

    Abstract: A method for providing an amorphous semicondcutor material thin film on a substrate member is described. In carrying out the method, there are disposed in spaced relationship in an evacuated chamber, a surface of a body of the semiconductor material which contains the constituents of the desired thin film in substantially stoichiometric proportion, the body being substantially uniform in thickness and in composition, and a surface of the substrate member. The distance between the two surfaces is chosen to be no greater than the shortest dimension of the surface of the semiconductor body, the area of the latter surface being chosen to be at least equal to the area of the surface of the substrate member. The semiconductor material contains semiconductor components, each of which has a high enough vapor pressure at a temperature less than its melting point to meet the criterion wherein the ratio P/(MTm)1/2, wherein P is the vapor pressure in Torr, M and Tm are molecular weight and melting points (in degrees Kelvin), respectively, has a value of at least 0.855 x 10 8. The surface of the semiconductor material body is uniformly heated to a temperature close to but less than its melting point to cause the semiconductor material thereof to evaporate therefrom onto the surface of the substrate member and to deposit on the substrate member's surface as an amorphous film. In the situation wherein it is desired to deposit an amorphous semiconductor material thin film wherein the vapor pressure of one of the constituents is not sufficiently high at a temperature less than its melting point to meet the above-mentioned ratio criterion, then, in the method, those components which have a sufficiently high vapor pressure at temperatures below their melting points to meet the criterion are combined in the desired stoichiometric proportions in a single semiconductor material body to provide a first sublimation source and those components which do not have sufficiently high vapor pressures at temperatures below the melting point of the semiconductor material to meet the above set forth ratio criterion function as separate sublimation sources. In this situation, the surface of the semiconductor body having the sufficiently high vapor pressure components is heated to a temperature close to but less than its melting point as in the single source method, and the sublimation sources comprising the low vapor pressure semiconductor constituents are positioned close to and adjacent to the first source, the latter sources being heated whereby their deposition rates onto the substrate are at the amounts required to provide their stoichiometric proportions in the thin film deposited on the substrate.

    20.
    发明专利
    未知

    公开(公告)号：FR2284163A1

    公开(公告)日：1976-04-02

    申请号：FR7521492

    申请日：1975-07-04

    Applicant: IBM

    Inventor： GAMBINO RICHARD J ,  HOLTZBERG FREDERIC ,  RUF RALPH R ,  WELBER BENJAMIN

    IPC: G11C17/00 ,  G11B7/243 ,  G11C13/00 ,  G11C13/04 ,  G11C11/00

    Abstract: 1496029 Vapour depositing data storage layers INTERNATIONAL BUSINESS MACHINES CORP 8 Aug 1975 [9 Sept 1974] 33108/75 Heading C7F A digital data storage device for recording information by a laser beam comprises two layers which react with each other when subjected to the beam and a barrier layer which prevents reaction of the two layers in the absence of the beam. The reactive materials may be Al-Se, Zn-Se, Bi-Se, As-Se, Mn-Bi, (In-Ga)-As, and the barrier layer Al 2 Se 3 , Al 2 O 3 , ZnSe, BiSe 3 , As 2 Se 3 , MnBi, Ga 1-x In x As. The layers may be vapour deposited on a glass or plastics substrate and the compounds formed by co-evaporation.

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