Particle beam alignment of liquid crystals
    3.
    发明公开
    Particle beam alignment of liquid crystals 失效
    由粒子束的装置的液晶的取向

    公开(公告)号:EP0806699A3

    公开(公告)日:1998-06-10

    申请号:EP97302675

    申请日:1997-04-18

    Applicant: IBM

    Abstract: Liquid crystals on a polymer (eg polyimide) surface are aligned by exposure to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 mu A/cm to 500mA/cm , and the angle of incidence over which alignment was measured was between 10 and 80 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.

    Molecule manipulator, method for manufacturing the same, and method for moving nano-structure
    5.
    发明专利
    Molecule manipulator, method for manufacturing the same, and method for moving nano-structure 审中-公开
    分子操作器,其制造方法和移动纳米结构的方法

    公开(公告)号:JP2005059204A

    公开(公告)日:2005-03-10

    申请号:JP2004234408

    申请日:2004-08-11

    CPC classification number: G02B21/34 C07C323/48

    Abstract: PROBLEM TO BE SOLVED: To provide a molecule manipulator, a method for manufacturing the same, and a method for moving a nano-structure.
    SOLUTION: The molecule manipulator includes photoreactive molecules including a double bond and changes a cis-trans arrangement of the double bond in reaction by the irradiation by the light of the selected wavelength, and a probe with the photoreactive molecules fitted thereto, for example, a probe of a scanning proximity probe microscope. A method for manufacturing the molecule manipulator includes a step of forming a covalent bond of the photoreactive molecules with the probe. A method for moving a nano-structure includes a step of controllably holding the nano-structure by the molecule manipulator, a step of moving the nano-structure, and a step of releasing the nano-structure.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供分子机械手,其制造方法和移动纳米结构的方法。 解决方案:分子操纵器包括包含双键的光反应性分子,并且通过所选波长的光的照射改变反应中的双键的顺式 - 反式排列,以及安装有光反应性分子的探针,用于 例如扫描邻近探针显微镜的探针。 制造分子机械手的方法包括形成光反应性分子的共价键与探针的步骤。 用于移动纳米结构的方法包括通过分子操纵器可控地保持纳米结构的步骤,移动纳米结构的步骤和释放纳米结构的步骤。 版权所有(C)2005,JPO&NCIPI

    IMPROVING THE STABILITY OF ION BEAM GENERATED ALIGNMENT LAYERS BY SURFACE MODIFICATION
    6.
    发明申请
    IMPROVING THE STABILITY OF ION BEAM GENERATED ALIGNMENT LAYERS BY SURFACE MODIFICATION 审中-公开
    通过表面改性改善离子束生成对准层的稳定性

    公开(公告)号:WO02057839A3

    公开(公告)日:2003-03-13

    申请号:PCT/US0144989

    申请日:2001-11-30

    Applicant: IBM

    CPC classification number: G02F1/13378

    Abstract: A method for preparing a alignment layer surface provides a surface on the alignment layer. A chemically modified surfae [117] is formed as a result of quenching and/or ion beam treatment in accordance with the present invention, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Layer [117] is now substantially free from dangling bonds and free radicals which could degrade properties of a liquid crystal display. Now, a substrate [101] is formed for use in a liquid crystal displax device. Another method for preparing an alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.

    Abstract translation: 制备取向层表面的方法提供了取向层上的表面。 作为根据本发明的淬火和/或离子束处理的结果形成化学改性的表面[117],并且将反应性气体引入到离子束中以饱和表面上的悬挂键。 层[117]现在基本上没有可能劣化液晶显示器性质的悬挂键和自由基。 现在,形成用于液晶置换装置的基板[101]。 制备取向层的另一种方法。 表面用离子轰击并用反应性组分淬火以使表面上的悬挂键饱和。

    10.
    发明专利
    未知

    公开(公告)号:BR8900147A

    公开(公告)日:1989-09-12

    申请号:BR8900147

    申请日:1989-01-13

    Applicant: IBM

    Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

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