公开(公告)号：DE2243153A1

公开(公告)日：1973-04-05

申请号：DE2243153

申请日：1972-09-01

Applicant: IBM

Inventor： CUOMO JEROME J ,  HOVEL HAROLD J

IPC: C23C14/06 ,  C01B21/06 ,  C23C14/00 ,  C23C15/00

公开(公告)号：CA1153814A

公开(公告)日：1983-09-13

申请号：CA352400

申请日：1980-05-21

Applicant: IBM

Inventor： HOVEL HAROLD J ,  WOODALL JERRY M

IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/18

Abstract: CONTROL OF SURFACE RECOMBINATION LOSS IN SOLAR CELLS Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating. YO979-006

公开(公告)号：CA1136745A

公开(公告)日：1982-11-30

申请号：CA339638

申请日：1979-11-13

Applicant: IBM

Inventor： HODGSON RODNEY T ,  HOVEL HAROLD J ,  WOODALL JERRY M

IPC: H01L31/04 ,  H01L31/055 ,  H01L31/02

Abstract: OPTICAL ENERGY CONVERSION Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al2O3:Cr+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate. YO978-016

公开(公告)号：FR2371776A1

公开(公告)日：1978-06-16

申请号：FR7725204

申请日：1977-08-09

Applicant: IBM

Inventor： HOVEL HAROLD J ,  WOODALL JERRY M P

IPC: H01L31/04 ,  H01L21/208 ,  H01L31/0693 ,  H01L31/10 ,  H01L21/228

Abstract: A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

公开(公告)号：CA913238A

公开(公告)日：1972-10-24

申请号：CA913238D

Applicant: IBM

Inventor： HOVEL HAROLD J