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    Laser device having enclosed laser cavity
    1.
    发明授权
    Laser device having enclosed laser cavity 失效
    具有封闭激光腔的激光装置

    公开(公告)号：US3893044A

    公开(公告)日：1975-07-01

    申请号：US35057573

    申请日：1973-04-12

    Applicant: IBM

    Inventor： DUMKE WILLIAM P ,  WOODALL JERRY M

    IPC: H01L21/208 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227 ,  H01S3/00

    CPC classification number: H01S5/227 ,  H01L33/00 ,  H01S5/2275 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/145 ,  Y10S148/169

    Abstract: A semiconductor laser device having an enclosed laser cavity is disclosed. The semiconductor laser is of the heterostructure type and embodiments of single and double heterostructures are disclosed. In both of the heterostructure devices disclosed, the side surfaces of the active region are well defined. This is accomplished, in one instance, by surrounding the laser active region on all side surfaces with a higher band gap material which also has a lower index of refraction. Thus, the laser cavity is partially enclosed by a semiconductor material on one conductivity type of a band gap higher than the band gap of the material of the laser cavity. The remaining portion is enclosed by a band gap material higher than the material of the laser cavity but is of opposite conductivity type to the first mentioned higher band gap material. In another instance the side surfaces of the laser active region are partially surrounded by a high band gap material and partially by a region of opposite conductivity type to the active region; both of which regions contribute carriers to the active region. The laser devices disclosed are made, for example, from layers of appropriately doped P and N type gallium arsenide and from layers of P and N type gallium aluminum arsenide. The resulting devices can have very small cavity cross sections, optical and electrical confinement of the excitation at all the side surfaces, low electrical series resistance and a low thermal resistance due to geometrical factors. The laser devices disclosed may be fabricated using well known fabrication techniques which include deposition of the layers of the laser by liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and melt-back or etching techniques. The latter techniques define the laser cavity.

    Abstract translation: 公开了一种具有封闭激光腔的半导体激光器件。 半导体激光器是异质结构类型，并且公开了单异质结和双异质结构的实施方案。 在所公开的两种异质结构器件中，有源区的侧表面是明确的。 这在一个实例中是通过用具有较低折射率的更高带隙材料围绕所有侧表面上的激光有源区来实现的。 因此，激光腔部分地被半导体材料包围在比激光腔的材料的带隙高的一个导电类型的带隙上。 剩余部分由比激光腔材料高的带隙材料包围，但与第一种较高带隙材料具有相反的导电类型。 在另一个实例中，激光有源区的侧表面被高带隙材料部分地包围，部分地被与有源区相反的导电类型的区域包围; 这两个区域都为活跃地区提供载体。 所公开的激光器件例如由适当掺杂的P型和N型砷化镓层以及由P型和N型砷化镓铝层形成。 所得到的器件可以具有非常小的空腔横截面，在所有侧表面处的激发的光学和电气限制，由于几何因素导致的低电串联电阻和低热阻。

    Converter of electromagnetic radiation to electrical power
    2.
    发明授权
    Converter of electromagnetic radiation to electrical power 失效
    电磁辐射对电力的转换器

    公开(公告)号：US3675026A

    公开(公告)日：1972-07-04

    申请号：US3675026D

    申请日：1969-06-30

    Applicant: IBM

    Inventor： WOODALL JERRY M

    IPC: H01L31/04 ,  H01L21/208 ,  H01L31/00 ,  H01L31/10 ,  H01L15/00

    CPC classification number: H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L31/00 ,  Y02E10/544 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/079 ,  Y10S148/119 ,  Y10S148/135

    Abstract: The converter obtains an efficient conversion of solar electromagnetic radiation into electrical power. A p-n junction is fabricated close to an optical surface of a region of n-type GaAs which is receptive of the solar radiation. There is a window on the optical surface consisting of a window layer of Ga1 xAlxAs, where x is less than one and greater than zero with a composition to cause the window layer to contribute selectively to absorbing and transmitting certain components of the incoming solar radiation. The layer of Ga1 xAlxAs is made nearly transparent to electromagnetic radiation and is nearly absorbent of the energetic particle radiation content of the received solar radiation. The window layer is an integral part of the procedure for forming the p-n junction. It contributes the p-type doping species to the junction by diffusion into the n-type GaAs substrate. For certain applications, the Ga1 xAlxAs window can be removed by etching with aqueous solution of HCl. If the window if removed, the ohmic contact is then made to the optical surface of the p-type GaAs. Illustratively, another structure provided by this disclosure includes a window of GaP of p-type conductivity on the surface of a region of n-type InP with a p-type transition region of InP therebetween.

    Abstract translation: 转换器可以有效地将太阳能电磁辐射转化成电力。 在接近太阳辐射的n型GaAs区域的光学表面附近制造p-n结。 在光学表面上有一个由Ga1-xAl xAs的窗口层组成的窗口，其中x小于1且大于零，其中组合物使得窗口层有选择地有助于吸收和传输入射太阳能的某些部件 辐射。 Ga1-xAl xAs层对电磁辐射几乎是透明的，并且几乎吸收了接收到的太阳辐射的能量粒子辐射含量。 窗口层是用于形成p-n结的过程的组成部分。 它通过扩散到n型GaAs衬底中将p型掺杂物质贡献到结。 对于某些应用，可以通过用HCl水溶液蚀刻来去除Ga1-xAl xAs窗口。 如果窗口如果被去除，则对p型GaAs的光学表面进行欧姆接触。

    Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth
    4.
    发明授权
    Method of preparing green-emitting gallium phosphide diodes by epitaxial solution growth 失效
    通过外源溶液生长制备绿色发光磷灰石二极体的方法

    公开(公告)号：US3585087A

    公开(公告)日：1971-06-15

    申请号：US3585087D

    申请日：1967-11-22

    Applicant: IBM

    Inventor： BLUM SAMUEL E ,  FOSTER LUTHER M ,  SHIH KWANG K ,  WOODALL JERRY M

    IPC: C30B15/00 ,  H01L21/208 ,  H01L33/00 ,  H01L7/46 ,  H01L7/00 ,  H01L7/38

    CPC classification number: C30B15/007 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L33/00 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/134 ,  Y10S438/919

    Abstract: GREEN-EMITTING ELECTROLUMINESCENT GALLIUM PHOSPHIDE DIODES ARE GROWN BY LIQUID PHASE EPITAXY. A GA-GAP MELT CONTAINED IN A COVERED CRUICIBLE IS PLACED IN A VERTICAL FURNACE. A GAP SUBSTRATE WAFER IS INSERTED INTO THE MELT WHICH HAS BEEN MAINTAINED AT A TEMPERATURE OF ABOUT 1110-1140*C. AN N-TYPE GAP LAYER IS PRODUCED BY THE ADDITION OF A DOPANT SELECTED FROM S, SE, AND TE TO THE MELT WHICH IS SLOWLY COOLED TO A TEMPERATURE OF ABOUT 1070-1100*C., AT WHICH TIME THE MELT IS COUNTERDOPED WITH AN ACCEPTOR DOPANT, E.G., ZN OR CD. THE MELT IS FURTHER COOLED TO ABOUT 1030-1060*C., CAUSING THE GROWTH OF A P-TYPE LAYER, AFTER WHICH THE SUBSTRATE IS REMOVED FROM THE METAL AND FURTHER COOLED TO AMBIENT TEMPERATURES. ELECTROLUMINESCENT DIODES ARE THEN PREPARED BY THINNING THE SUBSTRATE SIDE OF THE WAFER TO REDUCE SERIES RESISTANCE. AU-ZN AND AU-SN ALLOY DOTS ARE APPLIED TO THE P AND N SIDE RESPECTIVELY, OF SAWED OR CLEAVED SECTIONS OF THE WAFER. GREEN-EMITTING DIODES PREPARED BY THE ABOVE METHOD HAVE EFFICIENCIES OF ABOUT 2.7X10-4, WHICH EFFICIENCIES CAN BE IMPROVED BY A FACTOR OF 2 OR MORE BY COATING THE DIODES WITH ANTI-REFLECTIVE EPOXY COATINGS. THE DIODES FIND UTILITY AS PANEL INDICATORS.

    Method of doping during epitaxy
    6.
    发明授权
    Method of doping during epitaxy 失效
    外源染色方法

    公开(公告)号：US3874952A

    公开(公告)日：1975-04-01

    申请号：US26788072

    申请日：1972-06-30

    Applicant: IBM

    Inventor： WOODALL JERRY M

    IPC: H01L21/208 ,  H01L31/00 ,  H01L7/38

    CPC classification number: H01L31/00 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/051 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/084 ,  Y10S148/107 ,  Y10S148/119 ,  Y10S148/135 ,  Y10S438/925

    Abstract: The converter obtains an efficient conversion of solar electromagnetic radiation into electrical power. A p-n junction is fabricated close to an optical surface of a region of n-type GaAs which is receptive of the solar radiation. There is a window on the optical surface consisting of a window layer of Ga1 xAlxAs, where x is less than one and greater than zero with a composition to cause the window layer to contribute selectively to absorbing and transmitting certain components of the incoming solar radiation. The layer of Ga1 xAlxAs is made nearly transparent to electromagnetic radiation and is nearly absorbent of the energetic particle radiation content of the received solar radiation. The window layer is an integral part of the procedure for forming the p-n junction. It contributes the p-type doping species to the junction by diffusion into the n-type GaAs substrate. For certain applications, the Ga1 xAlxAs window can be removed by etching with aqueous solution of HCl. If the window is removed, the ohmic contact is then made to the optical surface of the p-type GaAs. Illustratively, another structure provided by this disclosure includes a window of GaP of p-type conductivity on the surface of a region of n-type InP with a p-type transition region of InP therebetween.

    Preparation of gallium arsenide with controlled silicon concentrations
    8.
    发明授权
    Preparation of gallium arsenide with controlled silicon concentrations 失效
    制备具有可控硅浓度的砷化镓

    公开(公告)号：US3322501A

    公开(公告)日：1967-05-30

    申请号：US38487764

    申请日：1964-07-24

    Applicant: IBM

    Inventor： WOODALL JERRY M

    IPC: C01G28/00 ,  C30B11/00 ,  H01L21/00

    CPC classification number: C01G28/00 ,  C30B11/00 ,  C30B29/42 ,  H01L21/00 ,  Y10S117/90 ,  Y10S117/906

    Abstract: A gallium arsenide crystal is prepared by placing gallium in a fused silica vessel in a reaction chamber, placing arsenic in the chamber and synthesising the crystal as a melt in the vessel in an atmosphere of gallous oxide produced by reacting gallic oxide with carbon in the reaction chamber, whereby silicon contamination of the melt is reduced. The gallic oxide may be placed in a carbon boat and heated to a temperature in the range 900 DEG C. to 1250 DEG C. to control the pressure of gallous oxide in the atmosphere. The silica vessel containing gallium may be placed at the high temperature end of a reaction chamber at a temperature above the melting point of gallium arsenide (preferably 1250 DEG C.), arsenic may be placed at the low temperature end at a temperature above its sublimation point (preferably 605 DEG C.) and the carbon boat containing gallic oxide may be placed between the two portions of the chamber at an intermediate temperature in the range 900 DEG to 1250 DEG C. which may be determined by the position of the boat. The carbon boat is preferably heated to 1000 DEG C. to obtain a crystal with minimum contamination. The gallium arsenide melt is cooled in the vessel to form the crystal.

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