公开(公告)号：CA1306803C

公开(公告)日：1992-08-25

申请号：CA572877

申请日：1988-07-22

Applicant: IBM

Inventor： HOWARD JAMES K

IPC: G11B5/39

Abstract: IMPROVED MAGNETORESISTIVE READ TRANSDUCER ASSEMBLY A magnetoresistive (MR) sensor which is provided with longitudinal bias by means of exchange coupling between the ferromagnetic MR layer (NiFe) and an ultrathin layer of an antiferromagnetic material (FeMn) with a thickness within the range of about 25 to 200 angstroms. The exchange structure is capped by a protective film to prevent oxidation damage to the exchange structure during subsequent thermal cycling. The capping layer is a dielectric or metal oxide (cermet) film such as Cr2 O3, A12 O3, Cr - Si O or Si O2. Alternatively, the capping layer can be a laminated FeMn-Lx film where LX is taken from the group consisting of Cr2 O3, A12 O3, and Si O2. SA987006

公开(公告)号：CA1269895A

公开(公告)日：1990-06-05

申请号：CA532016

申请日：1987-03-13

Applicant: IBM

Inventor： AHLERT RICHARD H ,  HOWARD JAMES K ,  LIM GRACE S

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/706 ,  G11B5/73 ,  G11B5/738 ,  B32B15/00

Abstract: A vertical magnetic recording medium is formed of multiple layers, each layer comprising a cobalt-platinum (CoPt) magnetic film formed on a hexagonal-close-packed (HCP) nucleating film. The thickness of each CoPt film in each layer is sufficiently thin to assure that the film has perpendicular magnetic anisotropy. The magnetic properties of the multilayered magnetic film structure can be varied by varying the thicknesses of the individual films and the number of layers.

公开(公告)号：CA1079867A

公开(公告)日：1980-06-17

申请号：CA287496

申请日：1977-09-26

Applicant: IBM

Inventor： HOWARD JAMES K ,  ROSENBERG WILLIAM D ,  WHITE JAMES F

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872 ,  H01L29/48

Abstract: AN IMPROVED SCHOTTKY BARRIER CONTACT AND METHODS OF FABRICATION THEREOF An aluminum-transition metal Schottky barrier contact, and methods of fabrication thereof are disclosed. In one preferred embodiment, the junction is comprised of an aluminum-tantalum intermetallic layer abutting a silicon substrate. Alternate embodiments utilize an intermetallic compound of a metal selected from the group of tantalum, zirconium, hafnium, niobium, titanium and nickel in combination with aluminum. The preferred embodiments can be fabricated by evaporation of a layer of a metal selected from the above mentioned group followed by evaporation of a layer of aluminum on a silicon substrate, after which an annealing step is utilized which creates the desired intermetallic compound in a layer abutting the silicon surface. Alternatively, the junction can be created by hot or cold sputtering of a preselected intermetallic compound of one of the metals with aluminum directly upon the silicon substrate, followed by deposition of a conductive layer such as aluminum. In the case of cold sputtering an annealing step is required to perfect the desired intermetallic compound structure; and in the case of hot sputtering an annealing step may be useful in perfecting the desired intermetallic structure, although it is not essential. The resulting devices are highly thermally stable with predictable barrier heights; and exhibit excellent electrical properties while they are capable of fabrication with good planarity.

公开(公告)号：FR2376519A1

公开(公告)日：1978-07-28

申请号：FR7735961

申请日：1977-11-21

Applicant: IBM

Inventor： HOWARD JAMES K ,  ROSENBERG WILLIAM D ,  WHITE JAMES F

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L29/872 ,  H01L29/48 ,  H01L21/283

Abstract: An aluminum-transition metal Schottky barrier contact, and methods of fabrication thereof are disclosed. In one preferred embodiment, the junction is comprised of an aluminum-tantalum intermetallic layer abutting a silicon substrate. Alternate embodiments utilize an intermetallic compound of a metal selected from the group of tantalum, zirconium, hafnium, niobium, titanium and nickel in combination with aluminum. The preferred embodiments can be fabricated by evaporation of a layer of a metal selected from the above mentioned group followed by evaporation of a layer of aluminum on a silicon substrate, after which an annealing step is utilized which creates the desired intermetallic compound in a layer abutting the silicon surface. Alternatively, the junction can be created by hot or cold sputtering of a preselected intermetallic compound of one of the metals with aluminum directly upon the silicon substrate, followed by deposition of a conductive layer such as aluminum. In the case of cold sputtering an annealing step is required to perfect the desired intermetallic compound structure; and in the case of hot sputtering an annealing step may be useful in perfecting the desired intermetallic structure, although it is not essential. The resulting devices are highly thermally stable with predictable barrier heights; and exhibit excellent electrical properties while they are capable of fabrication with good planarity.

公开(公告)号：PH30835A

公开(公告)日：1997-11-03

申请号：PH49556

申请日：1994-12-14

Applicant: IBM

Inventor： COFFEY KEVIN R ,  HYLTON TODD L ,  FONTANA ROBERT E ,  HOWARD JAMES K ,  PARKER MICHAEL A ,  TSONG CHING H

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10 ,  G11B5/30

Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

公开(公告)号：CA1159917A

公开(公告)日：1984-01-03

申请号：CA381245

申请日：1981-07-07

Applicant: IBM

Inventor： HOWARD JAMES K

IPC: H01L27/04 ,  H01G4/10 ,  H01G4/20 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/102 ,  H01L27/105 ,  H01L27/108 ,  H01L29/94 ,  H01L25/16

Abstract: Capacitor Structures With Dual Dielectrics A capacitor structure, for semiconductor devices, utilizing a dual or duplex dielectric wherein one dielectric layer is comprised of silicon nitride or aluminum oxide and a second dielectric layer is formed Ta2O5, HfO2, TiO2, PbTiO3, BaTiO3, CaTiO3 or SrTiO3. FI9-79-0377

公开(公告)号：CA1140682A

公开(公告)日：1983-02-01

申请号：CA356143

申请日：1980-07-14

Applicant: IBM

Inventor： HOWARD JAMES K ,  WHITE JAMES F

IPC: H01L21/768 ,  H01L21/28 ,  H01L23/532 ,  H01L29/43 ,  H01L29/47 ,  H01L29/40

Abstract: In a conductor pattern for integrated circuits, the use of barrier layers of TiW and selected transition metals between gold and a silicon substrate, with the transition metal containing a supplemental barrier region or stratum of an intermetallic formed between it and the gold. Also comprehended is the use of a platinum silicide layer between the TiW layer and silicon for Schottky Barrier Diodes.