公开(公告)号：CA1132832A

公开(公告)日：1982-10-05

申请号：CA371001

申请日：1981-02-16

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03F7/022 ,  G03F7/20 ,  G03F7/26 ,  G03F7/30 ,  G03F7/36 ,  H01L21/027 ,  G03C5/18

Abstract: Plasma Development of Resists Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure. FI9-79-063

公开(公告)号：DE2521727A1

公开(公告)日：1975-12-18

申请号：DE2521727

申请日：1975-05-15

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/30 ,  G03F7/38 ,  H05K3/06 ,  G03F7/10

公开(公告)号：DE2518480A1

公开(公告)日：1975-11-13

申请号：DE2518480

申请日：1975-04-25

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03C1/00 ,  G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  H01L21/027 ,  G03F7/00

Abstract: Photoresist material contg. an alkali-soluble resin (I) and a light-sensitive diazo cpd. (II) also contains a thermally-activated free radical initiator (III), pref. an organic peroxide in an amt., of is not3, esp. 3-15 wt.% w.r.t. (I) + (II). For the prodn. of masks for integrated circuit mfr. The addn. of (III) causes cross-linking and hence reduces distortion of pattern due to flow of the resist material on heating. The physical properties of the resist material are also improved, so that it gives bettern protection of the substrate during treatment with various materials and etchants.