公开(公告)号：DE2747669A1

公开(公告)日：1978-05-24

申请号：DE2747669

申请日：1977-10-25

Applicant: IBM

Inventor： KAPLAN LEON H ,  VISWANATHAN NUNGAVARAM S ,  ZIMMERMAN STEVEN M

IPC: H05K3/06 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H05K3/22 ,  H01L21/312

Abstract: Dissolution of an organic layer from a substrate is achieved by treatment with a mixt. of a persulphate and conc. sulphuric acid. The mixt. pref. contains 13-50g alkali persulphate (esp. K persulphate) per 100 ml. conc. sulphuric acid. Treatment can be carried out once or more times, followed by washing with water and drying. The process is claimed for use for the removal of polymeric organic photoresists from semiconductor substrates. These materials are used in the prodn. of printed circuits, exposure masks and microelectronic circuits. They can be negative photoresists, e.g. sensitised vinyl cinnamate polymers and partially cyclised poly-cis-isoprene polymers, or positive photoresists, e.g. diacetone-sensitised phenol/HCHO resins, polymethyl methacrylate polymers and copolymers and polysulphone polymers. No special safety precautions are necessary and there are no harmful side-effects on the prods. In an example, a soln. of 700g K persulphate in 2 l conc. sulphuric acid was used for the removal of a positive photoresist of cresol/HCHO novolak sensitised with orthoquinone-diazide on a primed, surface-oxidised Si wafer.

公开(公告)号：CA1132832A

公开(公告)日：1982-10-05

申请号：CA371001

申请日：1981-02-16

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03F7/022 ,  G03F7/20 ,  G03F7/26 ,  G03F7/30 ,  G03F7/36 ,  H01L21/027 ,  G03C5/18

Abstract: Plasma Development of Resists Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure. FI9-79-063

公开(公告)号：DE2521727A1

公开(公告)日：1975-12-18

申请号：DE2521727

申请日：1975-05-15

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/30 ,  G03F7/38 ,  H05K3/06 ,  G03F7/10

公开(公告)号：DE2518480A1

公开(公告)日：1975-11-13

申请号：DE2518480

申请日：1975-04-25

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03C1/00 ,  G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  H01L21/027 ,  G03F7/00

Abstract: Photoresist material contg. an alkali-soluble resin (I) and a light-sensitive diazo cpd. (II) also contains a thermally-activated free radical initiator (III), pref. an organic peroxide in an amt., of is not3, esp. 3-15 wt.% w.r.t. (I) + (II). For the prodn. of masks for integrated circuit mfr. The addn. of (III) causes cross-linking and hence reduces distortion of pattern due to flow of the resist material on heating. The physical properties of the resist material are also improved, so that it gives bettern protection of the substrate during treatment with various materials and etchants.

公开(公告)号：FR2371705A1

公开(公告)日：1978-06-16

申请号：FR7731531

申请日：1977-10-07

Applicant: IBM

Inventor： KAPLAN LEON H ,  VISWANATHAN NUNGAVARAM S ,  ZIMMERMAN STEVEN M

IPC: H05K3/06 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  G03C1/495 ,  H01L21/312

Abstract: Dissolution of an organic layer from a substrate is achieved by treatment with a mixt. of a persulphate and conc. sulphuric acid. The mixt. pref. contains 13-50g alkali persulphate (esp. K persulphate) per 100 ml. conc. sulphuric acid. Treatment can be carried out once or more times, followed by washing with water and drying. The process is claimed for use for the removal of polymeric organic photoresists from semiconductor substrates. These materials are used in the prodn. of printed circuits, exposure masks and microelectronic circuits. They can be negative photoresists, e.g. sensitised vinyl cinnamate polymers and partially cyclised poly-cis-isoprene polymers, or positive photoresists, e.g. diacetone-sensitised phenol/HCHO resins, polymethyl methacrylate polymers and copolymers and polysulphone polymers. No special safety precautions are necessary and there are no harmful side-effects on the prods. In an example, a soln. of 700g K persulphate in 2 l conc. sulphuric acid was used for the removal of a positive photoresist of cresol/HCHO novolak sensitised with orthoquinone-diazide on a primed, surface-oxidised Si wafer.

公开(公告)号：FR2274072A1

公开(公告)日：1976-01-02

申请号：FR7514030

申请日：1975-04-29

Applicant: IBM

Inventor： KAPLAN LEON H ,  ZIMMERMAN STEVEN M

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/30 ,  G03F7/38 ,  H05K3/06 ,  G03F1/00 ,  H01L21/02