公开(公告)号：DE2549787A1

公开(公告)日：1976-07-01

申请号：DE2549787

申请日：1975-11-06

Applicant: IBM

Inventor： BROADIE ROBERT WALLACE ,  KEMLAGE BERNARD MICHAEL ,  POGGE HANS BERNHARD

IPC: H01L21/205 ,  H01L33/00 ,  C23C11/08 ,  C23C13/04 ,  C23F17/00

公开(公告)号：DE2549738A1

公开(公告)日：1976-07-01

申请号：DE2549738

申请日：1975-11-06

Applicant: IBM

Inventor： KEMLAGE BERNARD MICHAEL ,  WOODALL JERRY MACPHERSON ,  WUESTENHOEFER WILLIAM CARL

IPC: H01L21/205 ,  H01L33/00

Abstract: A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei, but thin enough to avoid cracks in the epitaxial layer due to stress induced by thermal expansion. The thickness is generally between 1-2 mu . A second layer of GaP is then deposited using the standard halide transport process with thicknesses of 10-20 mu with the graded addition of AsH3, until the particularly desired design composition of GaAsP is obtained. A constant layer of GaAsP is grown on the graded layer.