公开(公告)号：AU498236B2

公开(公告)日：1979-02-22

申请号：AU2029176

申请日：1976-12-06

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  PLISKIN WILLIAM AARON

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73 ,  H01L21/82 ,  H01L21/326 ,  H01L27/04 ,  H01L21/22 ,  H01L21/265 ,  H01L21/32 ,  H01L21/20 ,  H01L21/324 ,  H01L29/70

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：CH597691A5

公开(公告)日：1978-04-14

申请号：CH1320176

申请日：1976-10-19

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  JUNCTION HOPEWELL ,  PLISKIN WILLIAM AARON

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：DE2540901A1

公开(公告)日：1976-04-29

申请号：DE2540901

申请日：1975-09-13

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  HULL EDWARD MELVIN ,  POGGE HANS BERNHARD

IPC: H01L21/3063 ,  H01L21/223 ,  H01L21/306 ,  H01L21/316 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/73 ,  H01L21/22

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

公开(公告)号：AU2029176A

公开(公告)日：1978-06-15

申请号：AU2029176

申请日：1976-12-06

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  PLISKIN WILLIAM AARON

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73 ,  H01L21/82 ,  H01L21/326 ,  H01L27/04 ,  H01L21/22 ,  H01L21/265 ,  H01L21/32 ,  H01L21/20 ,  H01L21/324 ,  H01L29/70

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：DE2652294A1

公开(公告)日：1977-10-13

申请号：DE2652294

申请日：1976-11-17

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  PLISKIN WILLIAM AARON

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：DE2549787A1

公开(公告)日：1976-07-01

申请号：DE2549787

申请日：1975-11-06

Applicant: IBM

Inventor： BROADIE ROBERT WALLACE ,  KEMLAGE BERNARD MICHAEL ,  POGGE HANS BERNHARD

IPC: H01L21/205 ,  H01L33/00 ,  C23C11/08 ,  C23C13/04 ,  C23F17/00