公开(公告)号：DE60335981D1

公开(公告)日：2011-03-24

申请号：DE60335981

申请日：2003-03-19

Applicant: IBM

Inventor： CLARK WILLIAM F ,  FRIED DAVID M ,  LANZEROTTI LOUIS D ,  NOWAK EDWARD J

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/10 ,  H01L29/786

公开(公告)号：AU2002305254A1

公开(公告)日：2003-11-10

申请号：AU2002305254

申请日：2002-04-26

Applicant: IBM

Inventor： LANZEROTTI LOUIS D ,  JOHNSON ROBB ALLEN

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/737 ,  H01L31/0328

Abstract: A bipolar transistor for a small signal amplifier that has improved Early voltages, and hence enhanced cutoff frequency. The SiGe layer (14) has a thickness (t) and a Ge content that is greater than the stability limit. The misfit dislocations do not create appreciable charge trapping sites, and do not extend into the overlying base/collector junction, such that performance is improved without yield degradation.

公开(公告)号：AU2003223306A8

公开(公告)日：2003-10-08

申请号：AU2003223306

申请日：2003-03-19

Applicant: IBM

Inventor： NOWAK EDWARD J ,  CLARK WILLIAM F ,  LANZEROTTI LOUIS D ,  FRIED DAVID M

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/786 ,  H01L29/78 ,  H01L33/00

Abstract: A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side of the central portion of the silicon structure. A strain-producing layer could be between the first gate and the first side of the central portion of the silicon structure and a second gate is on a second side of the central portion of the silicon structure.