公开(公告)号：AU2003217368A8

公开(公告)日：2003-09-09

申请号：AU2003217368

申请日：2003-02-06

Applicant: IBM

Inventor： GATES STEPHEN M ,  MCGAHAY VINCENT J ,  FITZSIMMONS JOHN A

IPC: H01L23/26 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41

Abstract: An integrated circuit structure comprises a main dielectric layer having a top surface. A cavity having sidewalls is formed in the main dielectric layer. A liner is formed on the sidewalls of the cavity. A metal conductor such as copper is formed over the liner filling the lined cavity. A getter layer is formed in the structure which combines with oxygen/moisture to form inert reaction products thereof. The getter layer can be either a conductive material which can be included in the liner or a dielectric layer which can be formed on top of the main dielectric layer, buried in the main dielectric layer or below the main dielectric layer.