公开(公告)号：EP1617957A4

公开(公告)日：2007-03-28

申请号：EP04757577

申请日：2004-03-17

Applicant: IBM

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: C09C1/00 ,  H01L21/312 ,  H01L21/316

CPC classification number: H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

Abstract: The present invention provides a multiphase, ultra low k film which exhibits improved elastic modulus and hardness as well as various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase, ultra low k dielectric film includes atoms of Si, C, 0 and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater.

公开(公告)号：EP1595276A4

公开(公告)日：2012-03-28

申请号：EP04705307

申请日：2004-01-26

Applicant: IBM

Inventor： GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC classification number: H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

公开(公告)号：EP1854131A4

公开(公告)日：2011-03-30

申请号：EP06849665

申请日：2006-01-12

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

IPC: H01L21/20 ,  B05C11/00 ,  B32B3/26

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

公开(公告)号：JP2006216541A

公开(公告)日：2006-08-17

申请号：JP2006013182

申请日：2006-01-20

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： EDELSTEIN DANIEL C ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL ,  LIN QINGHUANG ,  MILLER ROBERT D ,  NEUMAYER DEBORAH A ,  NGUYEN SON VAN

IPC: H01B3/00 ,  C23C16/42 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures. SOLUTION: The low-k dielectric material includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si-CH 3 functional groups, and another fraction of the C atoms are bonded as Si-R-Si, wherein R is phenyl, -[CH 2 ] n -, (n is greater than or equal to 1), HC=CH, C=CH 2 , C≡C or a [S] n linkage, (n is as defined above). COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有增加的内聚强度的低k电介质材料，用于包括互连和感测结构的电子结构中。 解决方案：低k电介质材料包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH 3 S / S官能团，另一部分 的C原子键合为Si-R-Si，其中R是苯基， - （n大于或等于1） ，HC = CH，C = CH 2 ，C≡C或[S] n 键，（n如上所定义）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2012109589A

公开(公告)日：2012-06-07

申请号：JP2011287303

申请日：2011-12-28

Applicant: IBM

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: H01L21/316 ,  C09C1/00 ,  C23C16/30 ,  C23C16/509 ,  C23C16/56 ,  H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide an ultra low dielectric constant (k) film which has a dielectric constant of not greater than 2.7 and exhibits improved mechanical properties such as improved elastic modulus and hardness, and also provide a method of manufacturing the film.SOLUTION: A multiphase ultra low k dielectric film 44 includes atoms of Si, C, O and H, and has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred multiphase ultra low k dielectric film 44 includes atoms of Si, C, O and H, and has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater.

公开(公告)号：WO2004083495A3

公开(公告)日：2005-02-03

申请号：PCT/US2004008195

申请日：2004-03-17

Applicant: IBM ,  GATES STEPHEN M ,  GRILL ALFRED

Inventor： GATES STEPHEN M ,  GRILL ALFRED

IPC: C09C1/00 ,  H01L21/312 ,  H01L21/316 ,  B05D3/06 ,  B05D3/02 ,  B23B5/14 ,  B23B5/18 ,  H01L21/3105 ,  H05H1/46

CPC classification number: H01L21/31695 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/249953 ,  Y10T428/249978 ,  H01L2924/00

Abstract: The present invention provides a multiphase, ultra low k film exhibiting improved elastic modulus and hardness, and various methods for forming the same. The multiphase, ultra low k dielectric film includes atoms of Si, C, O and H, represented by (104), (103), (102) and (101) respectively, has a dielectric constant of about 2.4 or less, nanosized pores or voids, an elastic modulus of about 5 or greater and a hardness of about 0.7 or greater. A preferred film includes atoms of Si, C, O and H, has a dielectric constant of about 2.2 or less, nanosized pores or voids, an elastic modulus of about 3 or greater and a hardness of about 0.3 or greater. These films consist of a first phase (100) of "host" matrix that is a random network of hydrogenated oxidize silicon carbon material (SiCOH), and a second phase (105) consisting essentially of C and H atoms.

Abstract translation: 本发明提供了具有改善的弹性模量和硬度的多相超低k膜及其形成方法。 多相超低k电介质膜分别由（104），（103），（102）和（101）表示的Si，C，O和H原子，介电常数约为2.4以下，纳米孔 或空隙，约5或更大的弹性模量和约0.7或更大的硬度。 优选的膜包括Si，C，O和H的原子，具有约2.2或更小的介电常数，纳米孔或空隙，约3或更大的弹性模量和约0.3或更大的硬度。 这些膜包括作为氢化氧化硅碳材料（SiCOH）的随机网络的第一相（100）“主体”基质和基本上由C和H原子组成的第二相（105）。

公开(公告)号：WO2013095692A3

公开(公告)日：2013-10-24

申请号：PCT/US2012032040

申请日：2012-04-04

Applicant: IBM ,  YANG CHIH-CHAO ,  GATES STEPHEN M ,  LI BAOZHEN ,  EDELSTEIN DAN

Inventor： YANG CHIH-CHAO ,  GATES STEPHEN M ,  LI BAOZHEN ,  EDELSTEIN DAN

IPC: H01L21/82 ,  H01L21/8242 ,  H01L23/62 ,  H01L27/108

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved electrical-fuse (e-fuse) device (200) including a dielectric layer (102) having a first top surface (108), two conductive features (104, 106) embedded in the dielectric layer (102) and a fuse element (122). Each conductive feature (104, 106) has a second top surface (110, 112) and a metal cap (114, 116) directly on the second top surface (110, 112). Each metal cap (114, 116) has a third top surface (118, 120) that is above the first top surface (108) of the dielectric layer (102). The fuse element (122) is on the third top surface (118, 120) of each metal cap (114, 116) and on the first top surface (108) of the dielectric layer (102). A method of forming the e-fuse device (200) is also provided.

Abstract translation: 一种改进的电熔丝（e熔丝）装置（200），包括具有第一顶表面（108）的介电层（102），嵌在电介质层（102）中的两个导电特征（104,106）和熔丝元件 （122）。 每个导电特征（104,106）具有直接在第二顶表面（110,112）上的第二顶表面（110,112）和金属盖（114,116）。 每个金属帽（114,116）具有在介电层（102）的第一顶表面（108）上方的第三顶表面（118,120）。 熔丝元件（122）位于每个金属盖（114,116）的第三顶表面（118,120）上并且位于介电层（102）的第一顶表面（108）上。 还提供了形成电熔丝装置（200）的方法。

公开(公告)号：WO2007089223A3

公开(公告)日：2007-11-01

申请号：PCT/US2006001154

申请日：2006-01-12

Applicant: IBM ,  DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

Inventor： DIMITRAKOPOULOS CHRISTOS D ,  GATES STEPHEN M ,  GRILL ALFRED ,  LANE MICHAEL W ,  LINIGER ERIC G ,  LIU XIAO HU ,  NGUYEN SON VAN ,  NEUMAYER DEBORAH A ,  SHAW THOMAS M

IPC: H01L21/20 ,  B05C11/00 ,  B32B3/26

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

Abstract: A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

Abstract translation: 描述了一种用于形成具有受控双轴应力的超低介电常数层的方法，其包括通过PECVD和旋涂涂覆之一形成含有Si，C，O和H的层并且在包含非常低浓度 的氧气和水每个小于10ppm。 还通过使用介电常数不超过2.8的方法来描述材料。 本发明克服了形成低双轴应力小于46MPa的薄膜的问题。

公开(公告)号：WO2004068551A3

公开(公告)日：2005-05-26

申请号：PCT/US2004002126

申请日：2004-01-26

Applicant: IBM ,  GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

Inventor： GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC classification number: H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

Abstract: The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNWCXOyHZ where 0.1

Abstract translation: 本发明包括一种用于形成硬掩模的方法，包括以下步骤：在基底顶上沉积聚合物预陶瓷前体膜; 将聚合物陶瓷前体膜转化为至少一个陶瓷层，其中陶瓷层具有SivNWCXOyHZ的组成，其中0.1≤v≤0.9,0<= w <0.5,0.05 <= x <= 0.9,0

公开(公告)号：JP2005203794A

公开(公告)日：2005-07-28

申请号：JP2005007763

申请日：2005-01-14

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GATES STEPHEN M ,  DIMITRAKOPOULOS CHRISTOS D ,  GRILL ALFRED ,  NGUYEN SON VAN

IPC: H01L21/768 ,  C23C16/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L23/58

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a dielectric material which includes Si, C, O and H atoms and has specific mechanical characteristic (tensile stress, degree of elasticity, hardness, cohesive strength, crack velocity in water) values giving stable ultralow k film which is not deteriorated by steam or integration processing. SOLUTION: This dielectrics materials has an about ≤2.8 dielectric constant, tensile stress of less than 45 Mpas, degree of elasticity of about 2 to about 15 GPas, and hardness of about 0.2 to about 2 GPas. An electronic device structure including the dielectric materials by this invention and various methods by which the dielectrics materials of this invention are manufactured are also disclosed. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供包含Si，C，O和H原子的介电材料，具有特定的机械特性（拉伸应力，弹性，硬度，内聚强度，水中的裂纹速度），给出稳定的超低温 k膜不会因蒸汽或整合处理而恶化。 解决方案：该电介质材料具有约≤2.8介电常数，小于45Mpa的拉伸应力，约2至约15GPas的弹性度，以及约0.2至约2GPas的硬度。 还公开了包括本发明的电介质材料和制造本发明的电介质材料的各种方法的电子器件结构。 版权所有（C）2005，JPO＆NCIPI