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公开(公告)号：CA805140A
公开(公告)日：1969-01-28
申请号：CA805140D
Applicant: IBM
Inventor： POWERS JOHN V , GREBE KURT R
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公开(公告)号：CA1114951A
公开(公告)日：1981-12-22
申请号：CA309386
申请日：1978-08-15
Applicant: IBM
Inventor： AHN KIE Y , COHEN MITCHELL S , POWERS JOHN V , TAO LUNG-JO
Abstract: PEDESTAL BUBBLE DOMAIN CHIP AND PROCESSES FOR MAKING SAME An improved magnetic bubble domain chip and processes for making the chip are described. The chip is comprised of a magnetic bubble domain film in which small bubble domains can be moved, and overlying layers of metallurgy. The layer of metallurgy closest to the bubble film is an electrically conductive layer having apertures (or recesses) therein. This layer is patterned to provide current carrying conductors. The next overlayer is a layer of magnetic material having in-plane magnetization which is patterned to provide the propagation elements used to move the bubble domains. In a particular embodiment, the magnetic layer is comprised of a magnetically soft material, such as permalloy. The chip is characterized by the provision of insulating pedestals located in the apertures of the conductive layer. These insulating pedestals are located in the regions of the chip used for sensing (and/or bubble generation). That is, they take the place of the thick conductive material in those areas of the chip. The sensor and bubble generators are usually portions of the in-plane magnetic layer. If the height of the insulating pedestals is the same as the height of the conductive layer, planarization is achieved and each overlayer lies in a single plane, where the planes are parallel to one another. However, the pedestal can be of any desired height. This chip is particularly advantageous for use with bubble domains having diameters of about 1 micron and less, since the pedestal magnetic chip can be provided by single level masking techniques in which only a single critical masking step is required. The insulating pedestal can be formed prior to deposition of the current carrying conductive layer, or subsequent to deposition of this layer.
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公开(公告)号：CA1071761A
公开(公告)日：1980-02-12
申请号：CA246915
申请日：1976-03-02
Applicant: IBM
Inventor： AHN KIE Y , HATZAKIS MICHAEL , POWERS JOHN V
IPC: G11C11/14 , H01F10/12 , H01F10/13 , H01F41/14 , H01F41/34 , H01L21/3205 , H05K3/10 , H05K3/24 , H05K3/38
Abstract: A method for making multilayer devices, such as magnetic bubble domain devices, which are comprised of a plurality of layers that are deposited using only a single critical masking step. A first metallic layer is deposited on a substrate including a magnetic bubble domain film, which may or may not have a nonmagnetic material thereon. A first resist layer is then applied, selectively exposed, and developed to expose at least two areas of the first metallic film. A thicker metallic layer is then deposited in the exposed areas, or is electroplated. After this, another resist layer is applied without deforming the pattern in the first layer, selectively exposed, and developed to protect certain areas of the thick metallic layer from subsequent formation of another metallic layer. During this subsequent formation, a second metallic film is formed using the first resist layer as a mask. After this, the resists are removed and the now uncovered portions of the original thin metallic layer are etched away. In a particular embodiment, a magnetic bubble domain chip is provided in which the second resist layer is used to protect the sensor region of the chip. The second resist layer need not be critically aligned as it only functions as a protect mask. Exposure and development of the second resist layer does not adversely affect the underlying metal layers.
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