公开(公告)号：US3649393A

公开(公告)日：1972-03-14

申请号：US3649393D

申请日：1970-06-12

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: H01L21/00 ,  H01L21/263 ,  H01L49/02 ,  C23F1/00

CPC classification number: H01L21/263 ,  H01L21/00 ,  H01L49/02 ,  Y10S438/949

Abstract: A METHOD OF ETCHING FILM MATERIAL SUCH AS A THIN FILM LAYER WHERE THE THICKNESS OF THE THIN FILM IS NOT UNIFORM. THE THIN FILM LAYER, WHICH MAY CONSIST OF AN OXIDE, A METAL OR THE LIKE, IS NORMALLY SUPPORTED ON A SUBSTRATE. THE THIN FILM LAYER HAS MARKEDLY DIFFERENT THICKNESS IN DIFFERENT AREAS TO BE ETCHED. THE PHOTORESIST COATED THIN FILM IS EXPOSED BY AN ELECTRON BEAM IN A SERIES OF SEPARATE EXPOUSRES WITH DIFFERENT EXPOSURE DENSITIES. THE THICKEST AREA IS EXPOSED FIRST WITH THE HIGHEST EXPOSURE DENSITY. SUBSEQUENT EXPOSURES ARE MADE IN THE OTHER DESIRED AREAS WITH DECREASING DENSITIES IN ACCORDANCE WITH DECRASING THICKNESS. IN THE DEVELOPMENT STEPS, THE PHOTORESIST IS DEVELOPED UNTIL THE AREA OF HIGHEST EXPOSED DENSITY IS OPENED AND THE THIN FILM IS ETCHED TO THE NEXT THICKNESS LEVEL. DEVELOPMENT IS CONTINUED UNTIL THE SECOND HIGHEST EXPOSED DENSITY IS OPENED AND THEN THE THIN FILM IS ETCHED TO THE NEXT THIN FILM LEVEL AND SO ON.

公开(公告)号：US3535137A

公开(公告)日：1970-10-20

申请号：US3535137D

申请日：1967-01-13

Applicant: IBM

Inventor： HALLER IVAN ,  HATZAKIS MICHAEL ,  SRINIVASAN RANGASWAMY

IPC: G03F7/039 ,  H01L21/00 ,  H01L23/29 ,  B44D1/50

CPC classification number: H01L21/00 ,  G03F7/039 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3519788A

公开(公告)日：1970-07-07

申请号：US3519788D

申请日：1967-01-13

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: B23K15/02 ,  H01J37/304 ,  H01L21/00 ,  B23K15/00

CPC classification number: H01J37/3045 ,  B23K15/02 ,  H01L21/00

公开(公告)号：DE69023958T2

公开(公告)日：1996-06-20

申请号：DE69023958

申请日：1990-05-23

Applicant: IBM

Inventor： BABICH EDWARD D ,  HATZAKIS MICHAEL ,  MCGOUEY RICHARD P ,  NUNES SHARON ,  PARASZCZAK JURIJ R ,  SHAW JANE M

IPC: B32B7/02 ,  C08L83/14 ,  H01B3/18 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L21/312

公开(公告)号：DE3279612D1

公开(公告)日：1989-05-18

申请号：DE3279612

申请日：1982-10-14

Applicant: IBM

Inventor： CANAVELLO BENJAMIN JOHN ,  HATZAKIS MICHAEL

IPC: H01L21/3205 ,  G03F7/20 ,  H01L21/027 ,  H01L21/306 ,  H05K3/00 ,  H05K3/04 ,  H01L21/00

公开(公告)号：CA1163671A

公开(公告)日：1984-03-13

申请号：CA358901

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  JONES FLETCHER ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C

IPC: G03D7/00

Abstract: A new class of E-beam resists is described. The resists are donor polymer-doped halocarbon acceptor transfer complexes. They are prepared from known polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloxide, polyepichlorohydrin, poly(ahalophosphazenes), polyacrylic chloride, polystyrene and the like; and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：DE2860639D1

公开(公告)日：1981-08-06

申请号：DE2860639

申请日：1978-06-21

Applicant: IBM

Inventor： CANAVELLO BENJAMIN JOHN ,  HATZAKIS MICHAEL ,  SIEGEL ARTHUR RICHARD ,  WATTERS CONNELL

IPC: C25D7/12 ,  B05C11/08 ,  B05D1/40 ,  G03F7/16 ,  H01L21/027 ,  H01L21/28

Abstract: This invention relates to a method of spin coating resist onto a wafer 72 and to a spinning head for coating the wafer. The spinning head has a chuck 10 to bo rotated by a spinner motor shaft 14. … The resist is coated onto the wafer 72 through a hole 82 in the centre of an interchangeable top clamp plate 78. The plate 78 is tapered to a knife-edge 86 to seal the top of the wafer and fuide the resist, during spinning, up the tapered surface and off the head. The plate 78 allows certain areas on the wafers such as areas containing registration marks, to be protected from resist coating.

公开(公告)号：CA1071455A

公开(公告)日：1980-02-12

申请号：CA267433

申请日：1976-12-08

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: G03F7/039 ,  G03F7/095 ,  H01L21/027 ,  H05K3/14 ,  B05D3/06

Abstract: HIGH SENSITIVITY RESIST SYSTEM FOR LIFT-OFF METALLIZATION High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutually exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5x10-6 coulombs/cm2.

公开(公告)号：DE69023958D1

公开(公告)日：1996-01-18

申请号：DE69023958

申请日：1990-05-23

Applicant: IBM

Inventor： BABICH EDWARD D ,  HATZAKIS MICHAEL ,  MCGOUEY RICHARD P ,  NUNES SHARON ,  PARASZCZAK JURIJ R ,  SHAW JANE M

IPC: B32B7/02 ,  C08L83/14 ,  H01B3/18 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L21/312

公开(公告)号：DE69106956T2

公开(公告)日：1995-08-10

申请号：DE69106956

申请日：1991-06-11

Applicant: IBM

Inventor： CUOMO JEROME J ,  GELORME JEFFREY D ,  HATZAKIS MICHAEL ,  LEWIS DAVID A ,  SHAW JANE M ,  WHITEHAIR STANLEY J

IPC: B01J19/12 ,  C08G73/10 ,  G01N22/00 ,  H01L21/312 ,  H05B6/68 ,  H05B6/80 ,  H05K1/03 ,  H05K3/46

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance. The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material. In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity (2) that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.