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公开(公告)号:GB1168907A
公开(公告)日:1969-10-29
申请号:GB4564267
申请日:1967-10-06
Applicant: IBM
Inventor: SEITZER DIETER
Abstract: 1,168,907. Semi-conductor circuits. INTERNATIONAL BUSINESS MACHINES CORP. 6 Oct., 1967 [22 Dec., 1966], No. 45642/67. Heading H3T. [Also in Division H1] The electrodes of an elongated semi-conductor diode form the transmission lines of a directional coupler. A substrate 20 of, e.g. aluminium, provides a common return conductor for transmission lines 22, 23 coupled over a length L. Line 22 consists of a layer of gold separated from the substrate 20 by a layer 21 of insulant, e.g. SiO 2 . A layer 23 of N-type silicon, GaAs or InSb forms with the gold electrode 22 and ohmic electrode 24 (of e.g. aluminium) a Schottky-barrier diode which is back-biased to the non-conductive condition. Electrodes 22, 20 provide an input line, electrodes 24, 20 an output line, and electrodes 22, 24 a coupling line, the characteristic impedances of the three lines being respectively Z 1 , Z 2 and Zk. It is shown that, provided the coupling is weak, a directional effect is obtained if Z 1 Z 2 = Z 2 k, using as a criterion for directionality zero signal at one end of the output line. A further restriction is that the length L of the device must approximate to one-quarter wavelength at the working frequency. The Specification describes in detail how the various dimensions and electrical parameters may be adjusted to fulfil these conditions. Since the operation of the device depends crucially upon the capacitance of the diode, removal of the bias destroys the directionality. Thus, if a pulse from source Vp, Fig. 4, is applied to terminals E 1 , output signals appear at terminals A 1 , Eg so long as the voltage of the pulse remains below the bias voltage Vb. If the voltage peak of the pulse exceeds Vb, the diodes become conducting, directionality is destroyed and an output appears at terminals A 2 , this output signal being free from noise. Alternatively, the circuit may be used as a limiter by short-circuiting terminals A 2 and deriving an output from terminals A 1 . Only input voltages not exceeding Vb appear at the output.
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公开(公告)号:CA864083A
公开(公告)日:1971-02-16
申请号:CA864083D
Applicant: IBM
Inventor: LUESCHER ROLF E , SEITZER DIETER
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公开(公告)号:FR1501330A
公开(公告)日:1967-11-10
申请号:FR06008148
申请日:1966-11-09
Applicant: IBM
Inventor: SEITZER DIETER , LUESCHER ROLF
Abstract: 1,106,839. Transistor amplifiers. INTERNATIONAL BUSINESS MACHINES CORPORATION. 24 Nov., 1966 [26 Nov., 1965], No. 52627/66. Heading H3T. In a differential amplifier comprising a transistor T1 having its base connected directly to a first input A and to a resistor Z for matching the first input to its signal source and its emitter connected by a resistor network R1, R2 to a second input A 1 arid to a voltage source, the resistor network R1, R2, R3 and R9 is arranged such that the second input A 1 is matched to its signal source and such that the current gains from the first input to the output at the collector and from the second input to the output at the collector are equal. As shown a further two similar amplifiers T2 and T3 are provided having two more inputs B, B 1 and an output taken from the collector D of the transistor T3. Transistor T3, which receives its inputs from the output of the transistors T1 and T2, may be replaced by a transistor of the NPN type and each differential amplifier or the complete circuit can be constructed in an integrated form. The differential amplifier, may be fed with pushpull input signals and the signal source may comprise a long transmission line.
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公开(公告)号:GB1080555A
公开(公告)日:1967-08-23
申请号:GB3590264
申请日:1964-09-02
Applicant: IBM
Inventor: SEITZER DIETER
IPC: G11B5/66 , H03K20060101
Abstract: 1,080,555. Circuits employing bi-stable magnetic elements; semi-conductor pulse circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. Sept. 2, 1964 [Sept. 27, 1963], No. 35902/64. Headings H3B and H3T. Magnetic thin film storage apparatus includes a pair of matched impedances connected in series across a pair of matched bit/sense lines, a drive amplifier connected to supply drive pulses to both lines in common and a sense amplifier connected across the pair of bit lines. The sense amplifier may be connected to the bit lines either directly or through a transformer. In a simple arrangement the matched impedances are diodes D1, D2, which present a high impedance to sense signals and a low impedance to drive currents (Fig. 3), or simple resistors (Fig. 2, not shown), or tunnel diodes (Fig. 6, not shown). In the tunnel diode arrangement an additional tunnel diode is shunted across the drive amplifier and a source of D.C. is connected in series with this parallel circuit. The matched tunnel diodes preamplify the sense signal in this arrangement. The output may alternatively be amplified by transistors T1, T2 (Fig. 5), which also provide the matched impedances. In a modification of this arrangement tunnel diodes are connected between the collectors of T1, T2 and a common point which is connected to the centre tap of the transformer primary by way of a voltage source (Fig. 8, not shown). In Fig. 4 the matched impedances are included in the last stage of the drive amplifier. The final embodiment (Fig. 9, not shown) includes tunnel diodes shunted by resistors and connected between the bit lines and a common point, which point is connected to the centre tap of the transformer primary by a voltage source. The drive amplifier is connected directly between the bit/sense lines and the common return path. The shunt resistors may be selected so that oscillation-free amplification of the sense signal may be obtained.
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公开(公告)号:FR1433083A
公开(公告)日:1966-03-25
申请号:FR15645
申请日:1965-05-04
Applicant: IBM
Inventor: SEITZER DIETER
IPC: H03F3/12
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公开(公告)号:CA903094A
公开(公告)日:1972-06-20
申请号:CA903094D
Applicant: IBM
Inventor: SEITZER DIETER , CLOSS FELIX H , STUCKI PETER
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公开(公告)号:GB1247199A
公开(公告)日:1971-09-22
申请号:GB6149468
申请日:1968-12-24
Applicant: IBM
Inventor: SEITZER DIETER
Abstract: 1,247,199. Transistor oscillators. INTERNATIONAL BUSINESS MACHINES CORP. 24 Dec., 1968 [29 Dec., 1967], No. 61494/68. Heading H3T. A microwave generator comprises a transistor distributed amplifier (Fig. 3), the transmission lines of which are connected (as in Fig. 4 or 5a) to form a closed loop around which a pulse may propagate after amplification to its point of origin at a rate determined by the length of the lines. Delay lines 52, 51 (Fig. 5a) are connected across ports A 2 , E 2 and A 1 , E 1 respectively of the amplifier 30, and by the variation of the delay characteristics of the line(s), the fundamental frequency can be changed. In Fig. 6 (not shown), the oscillator is keyed with a further transistor connected across it. The further transistor may be replaced by a lower frequency oscillator. The transistors of the amplifier may be of Schottky laser field effect type.
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