Copper-plated via of high aspect ratio, and its manufacturing method
    14.
    发明专利
    Copper-plated via of high aspect ratio, and its manufacturing method 有权
    通过高比例比较的铜及其制造方法

    公开(公告)号:JP2010010642A

    公开(公告)日:2010-01-14

    申请号:JP2008268013

    申请日:2008-10-16

    Abstract: PROBLEM TO BE SOLVED: To provide an improved process for manufacturing a via applicable to a requirement in the latest scaling technique, and capable of manufacturing the appropriately operable via in a batch. SOLUTION: The via and its manufacturing technique are provided with the improved high aspect ratio. In one embodiment, the manufacturing method is provided for the copper-plated via of the improved high aspect ratio. The method includes a step of etching the via of the high aspect ratio into a dielectric layer, for depositing a diffusion barrier region in the via of the high aspect ratio and on one or a plurality of surfaces of the dielectric layer, for depositing a copper layer on the diffusion barrier layer, for depositing a ruthenium layer on the copper layer, and for filling the via of the high aspect ratio with the plated copper on the ruthenium layer. Also, the via of the high aspect ratio is provided as copper-plated according to the method. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于制造适用于最新缩放技术的要求的通路的改进方法,并且能够批量制造适当可操作的通孔。

    解决方案:通孔及其制造技术具有改进的高纵横比。 在一个实施例中,为镀铜通孔提供改进的高纵横比的制造方法。 该方法包括将高纵横比的通孔蚀刻成电介质层的步骤,用于在高纵横比的通孔中以及介电层的一个或多个表面上沉积扩散阻挡区域,以沉积铜 层,用于在铜层上沉积钌层,并且用铀层上的镀铜填充高纵横比的通孔。 此外,根据该方法,通过镀铜,提供高纵横比的通孔。 版权所有(C)2010,JPO&INPIT

    EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS
    16.
    发明申请
    EFFICIENT INTERCONNECT STRUCTURE FOR ELECTRICAL FUSE APPLICATIONS 审中-公开
    电气保险丝应用的有效互连结构

    公开(公告)号:WO2009139962A3

    公开(公告)日:2010-01-07

    申请号:PCT/US2009038380

    申请日:2009-03-26

    Abstract: A semiconductor structure is provided that includes an interconnect structure and a fuse structure located in different areas, yet within the same interconnect level. The interconnect structure has high electromigration resistance, while the fuse structure has a lower electromigration resistance as compared with the interconnect structure. The fuse structure includes a conductive material embedded within an interconnect dielectric in which the upper surface of the conductive material has a high concentration of oxygen present therein. A dielectric capping layer is located atop the dielectric material and the conductive material. The presence of the surface oxide layer at the interface between the conductive material and the dielectric capping layer degrades the adhesion between the conductive material and the dielectric capping layer. As such, when current is provided to the fuse structure electromigration of the conductive material occurs and over time an opening is formed in the conductive material blowing the fuse element.

    Abstract translation: 提供了一种半导体结构,其包括互连结构和位于相同互连级别内的不同区域中的熔丝结构。 互连结构具有高的电迁移率,而与互连结构相比,熔丝结构具有较低的电迁移电阻。 熔丝结构包括嵌入在互连电介质内的导电材料,其中导电材料的上表面具有存在于其中的高浓度的氧。 电介质覆盖层位于电介质材料和导电材料的顶部。 在导电材料和电介质覆盖层之间的界面处的表面氧化物层的存在降低了导电材料和电介质覆盖层之间的粘合性。 因此,当电流提供给熔丝结构时,导电材料的电迁移发生,并且随着时间的推移,在引导熔丝元件的导电材料中形成开口。

    PLATING SEED LAYER INCLUDING AN OXYGEN/NITROGEN TRANSITION REGION FOR BARRIER ENHANCEMENT
    17.
    发明申请
    PLATING SEED LAYER INCLUDING AN OXYGEN/NITROGEN TRANSITION REGION FOR BARRIER ENHANCEMENT 审中-公开
    包括氧/氮转换区在内的电镀层用于屏障增强

    公开(公告)号:WO2007044305A3

    公开(公告)日:2007-12-13

    申请号:PCT/US2006038475

    申请日:2006-10-03

    Abstract: An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

    Abstract translation: 提供了一种互连结构,该互连结构包括具有增强的导电材料(优选Cu)扩散性质的镀敷种子层,其消除了使用单独的扩散层和种子层的需要。 具体而言,本发明提供用于互连金属扩散增强的镀敷种子层内的氧/氮过渡区。 电镀种子层可以包括Ru,Ir或其合金,互连导电材料可以包括Cu,Al,AlCu,W,Ag,Au等等。 优选地,互连导电材料是Cu或AlCu。 更具体地说,本发明提供了包括夹在顶部和底部种子区之间的氧/氮过渡区的单种晶层。 电镀种子层内氧/氮过渡区的存在显着增强了电镀种子的扩散阻挡性。

    INTERCONNECT STRUCTURE AND METHOD OF FABRICATION OF SAME
    18.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FABRICATION OF SAME 审中-公开
    互连结构及其制造方法

    公开(公告)号:WO2006113186A3

    公开(公告)日:2008-07-24

    申请号:PCT/US2006013179

    申请日:2006-04-07

    Abstract: A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.

    Abstract translation: 一种镶嵌线及其形成方法。 该方法包括:在电介质层的顶表面上形成掩模层; 在掩模层中形成开口; 在电介质层中形成沟槽,其中电介质层不被掩模层保护; 使掩模层下方的沟槽的侧壁凹陷; 在沟槽和掩模层的所有暴露表面上形成共形导电衬垫; 用芯电导体填充沟槽; 去除在电介质层的顶表面上方延伸的导电衬垫的部分,并去除掩模层; 以及在所述芯导体的顶表面上形成导电帽。 该结构包括包覆在导电衬垫中的芯导体和与未被导电衬垫覆盖的芯导体的顶表面接触的导电覆盖层。

    MICRO-CAVITY MEMS DEVICE AND METHOD OF FABRICATING SAME
    19.
    发明申请
    MICRO-CAVITY MEMS DEVICE AND METHOD OF FABRICATING SAME 审中-公开
    微孔MEMS器件及其制造方法

    公开(公告)号:WO2007027813A3

    公开(公告)日:2007-12-06

    申请号:PCT/US2006033924

    申请日:2006-08-30

    Abstract: A MEM switch is described having a free moving element (140) within in micro-cavity (40), and guided by at least one inductive element. The switch consists of an upper inductive coil (170); an optional lower inductive coil (190), each having a metallic core (180,200) preferably made of permalloy; a micro-cavity (40); and a free-moving switching element (140) also made of magnetic material. Switching is achieved by passing a current through the upper coil, inducing a magnetic field in the coil element. The magnetic field attracts the free-moving magnetic element upwards, shorting two open wires (M_I M_r) and thus, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the wires open. When gravity cannot be used, a lower coil becomes necessary to pull the free-moving switching element back and holding it at its original position.

    Abstract translation: 描述了一种MEM开关,其具有在微腔(40)内的自由移动元件(140),并由至少一个电感元件引导。 开关由上部感应线圈(170)组成; 可选的下感应线圈(190),每个具有优选由坡莫合金制成的金属芯(180,200) 微腔(40); 以及也由磁性材料制成的自由移动的开关元件(140)。 通过使电流通过上部线圈来实现切换,从而在线圈元件中产生磁场。 磁场向上吸引自由移动的磁性元件,使两根开放的导线(M_I M_r)短路,从而闭合开关。 当电流停止或反转时,自由移动的磁性元件通过重力返回到微腔的底部并且电线打开。 当不能使用重力时,需要下部线圈将自由移动的开关元件拉回并将其保持在其原始位置。

Patent Agency Ranking