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公开(公告)号:EP2243155A4
公开(公告)日:2012-07-25
申请号:EP09705024
申请日:2009-01-22
Applicant: IBM
Inventor: YANG CHIH-CHAO , EDELSTEIN DANIEL C , MCFEELY FENTON R
IPC: H01L21/768 , H01L23/532
CPC classification number: H01L21/76826 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
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公开(公告)号:EP1875499A4
公开(公告)日:2009-11-04
申请号:EP06749449
申请日:2006-04-07
Applicant: IBM
Inventor: YANG CHIH-CHAO , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C
IPC: H01L21/8242 , H01L21/20
CPC classification number: H01L23/5223 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
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公开(公告)号:EP1992012A4
公开(公告)日:2011-08-17
申请号:EP07861255
申请日:2007-03-01
Applicant: IBM
Inventor: YANG CHIH-CHAO , SPOONER TERRY A , VAN DER STRATEN OSCAR
IPC: H01L21/4763
CPC classification number: H01L21/76831 , H01L21/02063 , H01L21/31105 , H01L21/31144 , H01L21/32131 , H01L21/76805 , H01L21/76808 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76873 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
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4.STRUCTURE AND METHOD FOR MOSFET GATE ELECTRODE LANDING PAD 审中-公开
Title translation: 结构及方法MOSFET栅极电极着陆区公开(公告)号:EP1994563A4
公开(公告)日:2011-06-22
申请号:EP07797080
申请日:2007-01-16
Applicant: IBM
Inventor: CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C , RADENS CARL , WONG KWONG-HON , YANG CHIH-CHAO
IPC: H01L27/01 , H01L21/8234
CPC classification number: H01L27/1203 , H01L21/28114 , H01L21/823456 , H01L21/84 , H01L29/42376 , H01L2924/0002 , H01L2924/00
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5.HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS AND METHOD OF FORMING THE SAME 有权
Title translation: 具有平面磁畴壁的高密度记忆体装置及其制造方法公开(公告)号:EP2140458A4
公开(公告)日:2010-05-05
申请号:EP07867608
申请日:2007-12-04
Applicant: IBM
Inventor: GAIDIS MICHAEL C , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , DEBROSSE JOHN K , HSU LOUIS L C , RADENS CARL , WONG KEITH K H , YANG CHIH-CHAO
CPC classification number: G11C19/0841 , B82Y10/00 , G11C5/02 , G11C11/161 , G11C11/1675 , Y10T29/53165
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6.
公开(公告)号:EP2283513A4
公开(公告)日:2012-11-14
申请号:EP08823312
申请日:2008-09-23
Applicant: IBM
Inventor: YANG CHIH-CHAO , GIGNAC LYNNE M
IPC: H01L21/02 , H01L21/768 , H01L23/532
CPC classification number: H01L23/53238 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
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7.DISCONTINUOUS/NON-UNIFORM METAL CAP STRUCTURE AND PROCESS FOR INTERCONNECT INTEGRATION 审中-公开
Title translation: BATCH /不统一金属帽的结构和方法用于其CONNECTING整合公开(公告)号:EP2342743A4
公开(公告)日:2012-05-16
申请号:EP09819613
申请日:2009-07-21
Applicant: IBM
Inventor: GIGNAC LYNNE M , HU CHAO-KUN , MITTAL SURBHI , YANG CHIH-CHAO
IPC: H01L21/768 , H01L23/532
CPC classification number: H01L23/53238 , H01L21/02362 , H01L21/76849 , H01L21/76865 , H01L21/76868 , H01L23/5283 , H01L23/53223 , H01L23/53252 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
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8.INTERCONNECT STRUCTURE HAVING ENHANCED ELECTROMIGRATION RELIABILITY AND A METHOD OF FABRICATING SAME 审中-公开
Title translation: 具有产生改进的电荷迁移可靠性和过程连接结构公开(公告)号:EP2095409A4
公开(公告)日:2014-05-21
申请号:EP07842115
申请日:2007-09-10
Applicant: IBM
Inventor: YANG CHIH-CHAO , WANG PING-CHUAN , WANG YUN-YU
IPC: H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532
CPC classification number: H01L21/76847 , H01L23/5226 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
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9.STRUCTURE AND METHOD FOR CREATING RELIABLE VIA CONTACTS FOR INTERCONNECT APPLICATIONS 有权
Title translation: 结构及其制造方法可靠路径搜索连络人连接的应用程序公开(公告)号:EP2020027A4
公开(公告)日:2010-12-01
申请号:EP07870667
申请日:2007-05-11
Applicant: IBM
Inventor: YANG CHIH-CHAO , VAN DER STRATEN OSCAR
CPC classification number: H01L21/76834 , H01L21/288 , H01L21/76814 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76852 , H01L2924/0002 , H01L2924/00
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10.METHOD AND STRUCTURE FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES 审中-公开
Title translation: 方法和结构,每一位线FOR MRAM器件插槽的形成公开(公告)号:EP1911096A4
公开(公告)日:2008-10-22
申请号:EP06788341
申请日:2006-07-24
Applicant: IBM
Inventor: DALTON TIMOTHY J , HSU LOUIS L C , WONG KEITH KWONG HON , YANG CHIH-CHAO , GAIDIS MICHAEL C , RADENS CARL , CLEVENGER LAWRENCE A
IPC: H01L27/22 , H01L21/768 , H01L21/8247 , H01L23/528 , H01L43/12
CPC classification number: B82Y10/00 , H01L27/222 , H01L43/12
Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
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