公开(公告)号：CA2785625A1

公开(公告)日：2012-01-05

申请号：CA2785625

申请日：2011-06-08

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  ZINONI CARL

IPC: H01L27/22 ,  B82Y25/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

Abstract: The Magnetic Random Access Memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells being interconnected via the read word lines, the write word lines and the bit lines, each of the memory bit cells having a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element, wherein each of the write word lines and a respective number of the free ferromagnetic layer elements are formed as one single, continuous ferromagnetic line.