公开(公告)号：GB2505576A

公开(公告)日：2014-03-05

申请号：GB201318982

申请日：2012-06-19

Applicant: IBM

Inventor： ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

IPC: H01L23/48 ,  H01L21/28 ,  H01L21/768

Abstract: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

公开(公告)号：GB2505576B

公开(公告)日：2016-03-23

申请号：GB201318982

申请日：2012-06-19

Applicant: IBM

Inventor： ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

IPC: H01L23/48 ,  H01L21/28 ,  H01L21/768

Abstract: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

公开(公告)号：MY139408A

公开(公告)日：2009-09-30

申请号：MYPI0501939

申请日：1995-12-01

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON ALFRED ,  SHINDE SUBHASH LAXMAN ,  VALLABHANENI RAO VENKATESWARA ,  YOUNGMAN ROBERT A ,  HERRON LESTER WYNN ,  CORDERO CARLA NATALIA ,  FASANO BENJAMIN VITO ,  GOLAND DAVID BRIAN ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  JOHNSON GREGORY MARVIN ,  PATEL NIRANJAN MOHANLAL ,  REITTER ANDREW MICHAEL

IPC: B22F3/00 ,  B22F7/02 ,  B32B18/00 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

Abstract: DISCLOSED IS AN ALUMINUM NITRIDE BODY HAVING GRADED METALLURGY AND A METHOD FOR MAKING SUCH A BODY. THE ALUMINUM NITRIDE BODY HAS AT LEAST ONE VIA AND INCLUDES A FIRST LAYER IN DIRECT CONTACT WITH THE ALUMINUM NITRIDE BODY AND A SECOND LAYER IN DIRECT CONTACT WITH, AND THAT COMPLETELY ENCAPSULATES, THE FIRST LAYER. THE FIRST LAYER INCLUDES 30 TO 60 VOLUME PERCENT ALUMINUM NITRIDE AND 40 TO 70 VOLUME PERCENT TUNGSTEN AND/OR MOLYBDENUM WHILE THE SECOND LAYER INCLUDES 90 TO 100 VOLUME PERCENT OF TUNGSTEN AND/OR MOLYBDENUM AND 0 TO 10 VOLUME PERCENT OF ALUMINUM NITRIDE.

公开(公告)号：SG34299A1

公开(公告)日：1996-12-06

申请号：SG1995001804

申请日：1995-11-10

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON A ,  CORDERO CARLA N ,  FASANO BENJAMIN V ,  GOLAND DAVID B ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  HERRON LESTER W ,  JOHNSON GREGORY M ,  PATEL NIRANJAN M ,  REITTER ANDREW M ,  SHINDE SUBHASH L ,  VALLABHANENI RAO V ,  YOUNGMAN ROBERT A

IPC: B22F7/02 ,  B32B18/00 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

公开(公告)号：DE112012001870T5

公开(公告)日：2014-03-27

申请号：DE112012001870

申请日：2012-06-19

Applicant: IBM

Inventor： FAROOQ MUKTA G ,  HANNON ROBERT ,  VOLANT RICHARD P ,  ANDRY PAUL S ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K

IPC: H01L21/28 ,  H01L21/768

Abstract: Die vorliegende Offenbarung stellt einen thermo-mechanisch zuverlässigen Kupfer-TSV sowie eine Technik zum Bilden eines derartigen TSV während eines BEOL-Prozessablaufs bereit. Der TSV bildet einen ringförmigen Graben, der sich durch das Halbleitersubstrat hindurch erstreckt. Das Substrat definiert die inneren und äußeren Seitenwände des Grabens, wobei die Seitenwände durch einen Abstand innerhalb des Bereichs von 5 bis 10 Mikrometer separiert sind. Ein leitfähiger Pfad, der Kupfer oder eine Kupfer-Legierung aufweist, erstreckt sich innerhalb des Grabens von einer oberen Fläche der ersten dielektrischen Schicht durch das Substrat hindurch. Die Dicke des Substrats kann 60 Mikrometer oder weniger betragen. Direkt über dem ringförmigen Graben ist eine dielektrische Schicht mit einer Zwischenverbindungsmetallisierung ausgebildet, die mit dem leitfähigen Pfad leitfähig verbunden ist.

公开(公告)号：MY134821A

公开(公告)日：2007-12-31

申请号：MYPI9503713

申请日：1995-12-01

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON ALFRED ,  REITTER ANDREW MICHAEL ,  SHINDE SUBHASH LAXMAN ,  VALLABHANENI RAO VENKATESWARA ,  YOUNGMAN ROBERT A ,  CORDERO CARLA NATALIA ,  FASANO BENJAMIN VITO ,  GOLAND DAVID BRIAN ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  HERRON LESTER WYNN ,  JOHNSON GREGORY MARVIN ,  PATEL NIRANJAN MOHANLAL

IPC: B22F3/00 ,  B22F7/02 ,  B32B18/00 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

Abstract: DISCLOSED IS AN ALUMINUM NITRIDE BODY HAVING GRADED ETALLURGY AND A METHOD FOR MAKING SUCH A BODY. THE ALUMINUM NITRIDE ODY HAS AT LEAST ONE VIA AND INCLUDES A FIRST LAYER IN DIRECT ONTACT WITH THE ALUMINUM NITRIDE BODY AND A SECOND LAYER IN DIRECT NTACT WITH, AND THAT COMPLETELY ENCAPSULATES, THE FIRST LAYER. THE FIRST LAYER INCLUDES 30 TO 60 VOLUME PERCENT ALUMINUM ITRIDE AND 40 TO 70 VOLUME PERCENT TUNGSTEN AND/OR MOLYBDENUM WHILE THE SECOND LAYER INCLUDES 90 TO 100 VOLUME PERCENT OF TUNGSTEN AND/OR MOLYBDENUM 0 TO 10 VOLUME PERCENT OF ALUMINUM NITRIDE. (FIG. 1)