公开(公告)号：DE10126566C1

公开(公告)日：2002-12-05

申请号：DE10126566

申请日：2001-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAENISCH ANDREAS ,  KLING SABINE

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/283 ,  H01L23/50 ,  H01L27/088

Abstract: The integrated circuit has a number of parallel active strip-shaped regions (S1-3;D1,2) and a contact plane (K2) with contacts (9',11,12) arranged at regular intervals along the regions and arranged in the width direction of the regions so that the widths occupied by corresponding contacts in adjacent regions are different. Contacts in a first section of the length have different widths than in a second.

公开(公告)号：DE10054566A1

公开(公告)日：2002-05-16

申请号：DE10054566

申请日：2000-11-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLING SABINE

IPC: H01L21/761

Abstract: The semiconductor substrate has functional circuit structures (3), e.g. memory cells and dummy structures (4) contained within a region defined by an insulation trough, provided by a buried diffusion zone and a peripheral diffusion zone (5). The insulation trough is enclosed by a peripheral contact diffusion zone (6), provided in the surface of the peripheral diffusion zone.