公开(公告)号：DE10361697A1

公开(公告)日：2005-08-04

申请号：DE10361697

申请日：2003-12-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  LANZERSTORFER SVEN GUSTAV

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8247 ,  H01L29/423

Abstract: Preparation of trench structures with oxide cladding involving: (a) formation of a semiconductor region; (b) formation of a trench (30); (c) cladding of the trench inner region with a first oxidation layer; (d) formation or deposition of a material layer (50) inside the trench; and (e) use of a second oxidation step with deposition of a second oxidation layer. Independent claims are included for: (1) an integrated arrangement or chip with at least one trench structure; and (2) a semiconductor element, especially a trench structure transistor device, trench transistor or field plate transistor.