公开(公告)号：DE10245249B4

公开(公告)日：2008-05-08

申请号：DE10245249

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ

IPC: H01L21/336 ,  H01L21/225 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78

Abstract: An insulating layer (4) projects over the spacer along the surface of the semiconductor region (9), serving as a dopant source for the semiconductor zone (11) and a channel zone in the semiconductor region (9) runs along the insulating layer (4). An Independent claim is included for the corresponding manufacture.

公开(公告)号：DE102004005774A1

公开(公告)日：2005-08-25

申请号：DE102004005774

申请日：2004-02-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  HILLER ULI ,  ROPOHL JAN

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/74 ,  H01L29/78 ,  H01L31/111

Abstract: A method for fabrication of gate electrodes in a field-plate (magnetoresistive) trench transistor (1) having one, or more, trenches (3) and mesa zones (8), involves applying a gate electrode layer (7) on to the cell field so that the gate electrode layer (7) within or above the trenches (3) has indentations or pockets, and then applying a mask layer (10) on to the cell field. The mask layer (10) is etched-back so that only within the indentations or pockets of the gate electrode layer (7) does the residual masking layer remain, and the gate electrode layer (7) is etched-back using the residual mask layer (10) as the etching mask so that only within/above the trenches (5) does the residual gate electrode layer remain. An independent claim is given for a magneto resistive trench transistor.

公开(公告)号：DE10339488B3

公开(公告)日：2005-04-14

申请号：DE10339488

申请日：2003-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  DEBOY GERALD ,  HENNINGER RALF

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

Abstract: The semiconductor component has a drift zone (40) formed below one surface (101) of a semiconductor body (100) so that it extends laterally between 2 doped terminal regions (20,30), at least one field electrode (50) projecting into the drift zone from the surface of the semiconductor body and electrically insulated from the semiconductor body by an insulation layer (52).

公开(公告)号：DE10245249A1

公开(公告)日：2004-04-15

申请号：DE10245249

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ

IPC: H01L21/225 ,  H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78

Abstract: An insulating layer (4) projects over the spacer along the surface of the semiconductor region (9), serving as a dopant source for the semiconductor zone (11) and a channel zone in the semiconductor region (9) runs along the insulating layer (4). An Independent claim is included for the corresponding manufacture.

公开(公告)号：DE10212149A1

公开(公告)日：2003-10-16

申请号：DE10212149

申请日：2002-03-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  KRUMREY JOACHIM ,  RIEGER WALTER ,  POELZL MARTIN

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L27/105

Abstract: The switching behavior of a transistor configuration is improved by providing a shielding electrode in an edge region. The shielding electrode surrounds at least sections of an active cell array. The capacitance between an edge gate structure and a drain zone and hence the gate-drain capacitance CGD of the transistor configuration is reduced by the shielding electrode located in the edge region.

公开(公告)号：DE102004009602B4

公开(公告)日：2009-09-17

申请号：DE102004009602

申请日：2004-02-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ

IPC: H01L29/78 ,  H01L31/119

Abstract: A trench transistor has a cell array, in which at least one cell array trench ( 2 ) is provided, and an edge structure framing the cell array. An edge trench ( 15 ) spaced apart from the cell array trenches ( 2 ) is provided in the edge structure.

公开(公告)号：DE10212144B4

公开(公告)日：2005-10-06

申请号：DE10212144

申请日：2002-03-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRUMREY JOACHIM ,  HIRLER FRANZ ,  HENNINGER RALF ,  POELZL MARTIN ,  RIEGER WALTER

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: The transistor structure has an array of IGBTs (Insulated Gate Bipolar Transistors) side-by-side accommodated in trenches (9). The trenches are connected at one end to a cross-trench (91). There is a gate structure (201), first and second portions (212,202), a source zone and a drain zone. There are metalized areas (20,21) with through contacts (31,32), touching the gate and source structures respectively.

公开(公告)号：DE10258467B3

公开(公告)日：2004-09-30

申请号：DE10258467

申请日：2002-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  ZUNDEL MARKUS ,  PFIRSCH FRANK

IPC: H01L21/265 ,  H01L21/329 ,  H01L21/336 ,  H01L21/337 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L29/861

Abstract: Power semiconductor component comprises semiconductor body (1,2) having trenches (4,5) with sidewalls inserted from upper surface of body, drift zone formed in regions bordering trenches, and field electrode (15). Field electrode is formed in lower region of trenches away from upper surface of body. Compensation regions of conducting type opposite that of drift zone are formed parallel to trench side walls in region bordering trenches. An independent claim is also included for a process for the production of the power semiconductor component.

公开(公告)号：DE10212144A1

公开(公告)日：2003-10-30

申请号：DE10212144

申请日：2002-03-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRUMREY JOACHIM ,  HIRLER FRANZ ,  HENNINGER RALF ,  POELZL MARTIN ,  RIEGER WALTER

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: The transistor structure has an array of IGBTs (Insulated Gate Bipolar Transistors) side-by-side accommodated in trenches (9). The trenches are connected at one end to a cross-trench (91). There is a gate structure (201), first and second portions (212,202), a source zone and a drain zone. There are metalized areas (20,21) with through contacts (31,32), touching the gate and source structures respectively.

公开(公告)号：DE102004005774B4

公开(公告)日：2006-09-28

申请号：DE102004005774

申请日：2004-02-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HENNINGER RALF ,  HIRLER FRANZ ,  HILLER ULI ,  ROPOHL JAN

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/74 ,  H01L29/78 ,  H01L31/111

Abstract: A method for fabrication of gate electrodes in a field-plate (magnetoresistive) trench transistor (1) having one, or more, trenches (3) and mesa zones (8), involves applying a gate electrode layer (7) on to the cell field so that the gate electrode layer (7) within or above the trenches (3) has indentations or pockets, and then applying a mask layer (10) on to the cell field. The mask layer (10) is etched-back so that only within the indentations or pockets of the gate electrode layer (7) does the residual masking layer remain, and the gate electrode layer (7) is etched-back using the residual mask layer (10) as the etching mask so that only within/above the trenches (5) does the residual gate electrode layer remain. An independent claim is given for a magneto resistive trench transistor.