Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"MUEMMLER KLAUS" Page 2

11.

发明专利
Cell field for DRAMs comprises memory cells having lower source/drain regions with sections of trenched source/drain layer perforated by perforated trenches and word line trenches 未知

公开(公告)号：DE102004026000A1

公开(公告)日：2005-02-24

申请号：DE102004026000

申请日：2004-05-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NUETZEL JOACHIM , MUEMMLER KLAUS , MANGER DIRK , SCHLOESSER TILL , WEIS ROLF , GOEBEL BERND , MUELLER WOLFGANG

IPC: G11C11/34 , H01L21/8242 , H01L27/108

Abstract: A cell field comprises memory cells (2) having lower source/drain regions (33) with sections of a trenched source/drain layer (332) perforated by perforated trenches (20) and word line trenches (7). An independent claim is also included for the production of a cell field.

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