公开(公告)号：DE10129954B4

公开(公告)日：2007-12-13

申请号：DE10129954

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND

IPC: H01L21/20 ,  H01L21/329 ,  H01L21/60 ,  H01L21/762 ,  H01L29/93

公开(公告)号：DE102004041556B4

公开(公告)日：2007-09-20

申请号：DE102004041556

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEHLINGER GABRIEL KONRAD ,  TREU MICHAEL

IPC: H01L29/872 ,  H01L21/329 ,  H01L29/861

Abstract: The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction (18) is provided.

公开(公告)号：DE10129954A1

公开(公告)日：2003-01-09

申请号：DE10129954

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND

IPC: H01L21/762 ,  H01L21/20 ,  H01L21/329 ,  H01L21/60 ,  H01L29/93

Abstract: Production of a semiconductor component comprises preparing a semiconductor wafer (100) having a front side (101) and a rear side (102); applying a first support wafer adhering to the front side on the wafer; removing a layer from the semiconductor wafer; applying a second support wafer adhering to the rear side of the removed layer; and removing the first support wafer. Preferred Features: Contacts are produced after removing the first support wafer. The semiconductor wafer is made from silicon carbide. The front side of the semiconductor wafer is structured before applying the first support wafer to define individual component regions.