公开(公告)号：DE102007009227B4

公开(公告)日：2009-01-02

申请号：DE102007009227

申请日：2007-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND ,  RUEB MICHAEL

IPC: H01L29/872 ,  H01L21/329

Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.

公开(公告)号：DE102006033506A1

公开(公告)日：2008-01-24

申请号：DE102006033506

申请日：2006-07-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL

IPC: H01L29/872 ,  G05F1/70 ,  H02M3/00

Abstract: A circuit having a Schottky contact component is disclosed. One embodiment provides a semiconductor substrate having a layer of a first conductivity type, a metal layer, and delimited semiconductor regions of a second conductivity type opposite the first conductivity type, provided in or on the main surface, in order to increase the resistance of the Schottky contact component to overcurrents. At least the predominant number of delimited semiconductor regions of the second conductivity type being provided in the form of islands with a predetermined distance greater than a minimum interaction distance required for interaction of the islands to achieve an associated shielding effect.

公开(公告)号：DE102009009874B4

公开(公告)日：2014-05-15

申请号：DE102009009874

申请日：2009-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTREMBA RALF ,  SEIBT MARCO ,  KIRCHNER UWE ,  PEINHOPF WOLFGANG ,  TREU MICHAEL ,  SCHLOEGL ANDREAS ,  FELDVOSS MARIO

IPC: H01L23/48 ,  H01L23/28 ,  H01L23/49 ,  H01L23/495 ,  H01L25/16

Abstract: Bauelement (100–900), umfassend: einen Halbleiterchip (10) mit einer Steuerelektrode (11) und einer ersten Lastelektrode (12) auf einer ersten Oberfläche (13) und einer zweiten Lastelektrode (14) auf einer zweiten Oberfläche (15) gegenüber der ersten Oberfläche (13); einen Träger (22), über dem der Halbleiterchip (10) platziert ist, wobei die zweite Oberfläche (15) des Halbleiterchips (10) dem Träger (22) zugewandt ist; eine elektrisch an die Steuerelektrode (11) gekoppelte erste Zuleitung (16); eine elektrisch an die erste Lastelektrode (12) gekoppelte zweite Zuleitung (17); eine elektrisch an die erste Lastelektrode (12) gekoppelte dritte Zuleitung (18), wobei die dritte Zuleitung (18) von der zweiten Zuleitung (17) getrennt ist; und eine elektrisch an die zweite Lastelektrode (14) gekoppelte vierte Zuleitung (19), wobei die vierte Zuleitung (19) mit dem Träger (22) zusammenhängt, mindestens eine der zweiten und dritten Zuleitung (17, 18) zwischen der ersten und vierten Zuleitung (16, 19) angeordnet ist, mindestens ein Teil (23) der zweiten Zuleitung (17) zwischen der ersten Zuleitung (16) und dem Träger (22) angeordnet ist, und der Abstand zwischen der vierten Zuleitung (19) und der Zuleitung neben der vierten Zuleitung (19) größer ist als der jeweilige Abstand zwischen der ersten, zweiten und dritten Zuleitung (16, 17, 18).

公开(公告)号：DE102009009874A1

公开(公告)日：2009-09-10

申请号：DE102009009874

申请日：2009-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTREMBA RALF ,  SEIBT MARCO ,  KIRCHNER UWE ,  PEINHOPF WOLFGANG ,  TREU MICHAEL ,  SCHLOEGL ANDREAS ,  FELDVOSS MARIO

IPC: H01L23/48 ,  H01L23/28 ,  H01L25/16

Abstract: An electronic device and manufacturing thereof. One embodiment provides a semiconductor chip having a control electrode and a first load electrode on a first surface and a second load electrode on a second surface. A first lead is electrically coupled to the control electrode. A second lead is electrically coupled to the first load electrode. A third lead is electrically coupled to the first load electrode, the third lead being separate from the second lead. A fourth lead is electrically coupled to the second load electrode, the second and third leads being arranged between the first and fourth leads.

公开(公告)号：DE102004041556A1

公开(公告)日：2006-03-02

申请号：DE102004041556

申请日：2004-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEHLINGER GABRIEL KONRAD ,  TREU MICHAEL

IPC: H01L21/329 ,  H01L29/861 ,  H01L29/872

Abstract: The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction (18) is provided.

公开(公告)号：DE19954866A1

公开(公告)日：2001-05-31

申请号：DE19954866

申请日：1999-11-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTSCH WOLFGANG ,  TREU MICHAEL ,  RUPP ROLAND

IPC: H01L29/872 ,  H01L21/04 ,  H01L21/20 ,  H01L21/3065 ,  H01L29/47 ,  H01L21/28

Abstract: The invention relates to a method for treating a surface of an SiC semiconductor body (1, 2) produced by epitaxy. According to said method, the parts (4) of the epitactic layer (2) that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer (5) configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.

公开(公告)号：DE102008019599A1

公开(公告)日：2008-10-30

申请号：DE102008019599

申请日：2008-04-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUPP ROLAND ,  WOEHLERT STEFAN ,  GUTT THOMAS ,  TREU MICHAEL

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/3213 ,  H01L21/329 ,  H01L21/338 ,  H01L23/58

公开(公告)号：DE102006033506B4

公开(公告)日：2008-07-03

申请号：DE102006033506

申请日：2006-07-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL

IPC: H01L29/872 ,  G05F1/70 ,  H02M3/00

Abstract: A circuit having a Schottky contact component is disclosed. One embodiment provides a semiconductor substrate having a layer of a first conductivity type, a metal layer, and delimited semiconductor regions of a second conductivity type opposite the first conductivity type, provided in or on the main surface, in order to increase the resistance of the Schottky contact component to overcurrents. At least the predominant number of delimited semiconductor regions of the second conductivity type being provided in the form of islands with a predetermined distance greater than a minimum interaction distance required for interaction of the islands to achieve an associated shielding effect.

公开(公告)号：DE102008019599B4

公开(公告)日：2011-05-05

申请号：DE102008019599

申请日：2008-04-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUPP ROLAND ,  WOEHLERT STEFAN ,  GUTT THOMAS ,  TREU MICHAEL

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/3213 ,  H01L21/329 ,  H01L21/338 ,  H01L23/58

公开(公告)号：DE102007009227A1

公开(公告)日：2008-08-28

申请号：DE102007009227

申请日：2007-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TREU MICHAEL ,  RUPP ROLAND ,  RUEB MICHAEL

IPC: H01L29/872

Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.