-
公开(公告)号：ITMI962097A1
公开(公告)日：1998-04-10
申请号：ITMI962097
申请日：1996-10-10
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , AFTANDILIAN LEON
IPC: H01L27/04 , H01L29/78 , H02M1/08 , H02M7/537 , H02M7/538 , H03B1/00 , H03F1/52 , H03K17/06 , H03K17/16
Abstract: In a level shifted high voltage MOSgate device driver which drives MOSgate devices such as IGBTs and power MOSFETs, effects of negative voltage swings caused by currents commutating through LS1 and LS2 inductances in the power circuits are avoided due to several measures. First, the values of the inductances LS1 and LS2 are reduced by keeping short conductor lengths, by other layout/wire bonding techniques to reduce the values of the LS1 and LS2 inductances. The external, charging capacitor Cb value is increased substantially to reduce the voltage buildup on the internal circuitry. A typical value is 0.47 mu F, for a given circuit, IGBT and layout combination. The size of the CVCC capacitor is selected to keep the supply voltage as stiff as possible. Preferably, CVCC is at about ten times the value of the sum of the Cb capacitance in the circuit. The resistance Rb in the bootstrap path is reduced as much as possible, preferably to zero. Finally, a resistor RCOM is optionally added between the common nodes of the driver circuit and the power device circuit.
-
公开(公告)号：DE4036426A1
公开(公告)日：1991-05-29
申请号：DE4036426
申请日：1990-11-15
Applicant: INT RECTIFIER CORP
Inventor： PELLY BRIAN R , DUBHASHI AJIT , EWER PETER RICHARD
Abstract: A power module contains IGBT die along with integrated circuit driver chips and opto isolators or isolation transformers within the same module housing. Output terminals are provided which can be interfaced directly to control logic or microprocessors for operating the module. The IGBTs may have current-sensing electrodes to simplify current measurement and control functions.
-
公开(公告)号：DE19749392B4
公开(公告)日：2007-04-05
申请号：DE19749392
申请日：1997-11-07
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , CHEY CHRIOSTOPHER C , CLEMENTE STEFANO
Abstract: A current sensing circuit including a shunt resistor coupled, at one end, to the low-side transistor of a half bridge circuit and, at its other end, to a load. The voltage sensed across the shunt resistor is proportional to the current delivered to the load. A level shifting circuit is provided to transpose the sensed voltage to a low voltage signal which can be fed back to control commutation of the transistors in the half bridge circuit.
-
公开(公告)号：FR2801725A1
公开(公告)日：2001-06-01
申请号：FR0014866
申请日：2000-11-17
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , SIU STEPHEN NICHOLAS , LIN HENY W , VAYSSE BERTRAND P , CORFIELD MICHAEL A
IPC: H01L23/24 , H01L23/40 , H01L25/16 , H01L25/07 , H01L25/18 , H05K7/14 , H05K7/20 , H01L23/34 , H01L23/32 , H01L23/52
Abstract: A semiconductor component is fastened on upper surface of planar insulated metal substrate which is connected with heat sink, thermally. A printed circuit board (PCB) is arranged on the substrate, such that opening of PCB is aligned with heat dissipation surface of substrate. A lid is arranged covering the opening of PCB which is fastened directly onto heat sink using a screw. The outer edge of the upper surface of the insulated metal substrate is fastened to the lower surface of the printed circuit board by adhesive band. A connection pad on the PCB is connected with semiconductor component on the metal substrate by wire electrically. The opening of PCB surrounded by lid contains sealing material.
-
公开(公告)号：FR2755766B1
公开(公告)日：2000-04-07
申请号：FR9714028
申请日：1997-11-07
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , CLEMENTE STEFANO , CHEY CHRISTOPHER
Abstract: A current sensing circuit including a shunt resistor coupled, at one end, to the low-side transistor of a half bridge circuit and, at its other end, to a load. The voltage sensed across the shunt resistor is proportional to the current delivered to the load. A level shifting circuit is provided to transpose the sensed voltage to a low voltage signal which can be fed back to control commutation of the transistors in the half bridge circuit.
-
Patent Agency Ranking
公开(公告)号：DE19753294C1
公开(公告)日：1999-04-29
申请号：DE19753294
申请日：1997-12-01
Applicant: INT RECTIFIER CORP
Inventor： MANGTANI VIJAY , DUBHASHI AJIT
IPC: H03K17/22 , H03K17/785 , H03K17/16
Abstract: The driver includes a diode (D), a capacitor (C1) and a resistor (R2) which clamp the output of the opto-isolator (2) to a higher voltage than that required to drive buffer (4). The value of the capacitor is selected to swamp the internal transistor of the opto-isolator. The capacitor charges up to the supply voltage (Vcc) and remains fully charged and isolated from the opto-isolator driver. If the power supply dies down, the capacitor discharges and resets itself, ready for the next power-up.
-
公开(公告)号：SG60147A1
公开(公告)日：1999-02-22
申请号：SG1997003990
申请日：1997-11-07
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , CLEMENTE STEFANO , CHEY CHRISTOPHER
IPC: G01R19/00 , H02P6/00 , H02P6/18 , G01R19/15 , G01R19/155 , G01R19/165
Abstract: A current sensing circuit including a shunt resistor coupled, at one end, to the low-side transistor of a half bridge circuit and, at its other end, to a load. The voltage sensed across the shunt resistor is proportional to the current delivered to the load. A level shifting circuit is provided to transpose the sensed voltage to a low voltage signal which can be fed back to control commutation of the transistors in the half bridge circuit.
-
公开(公告)号：DE19749392A1
公开(公告)日：1998-05-20
申请号：DE19749392
申请日：1997-11-07
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , CHEY CHRIOSTOPHER C , CLEMENTE STEFANO
Abstract: A current sensing circuit comprises a resistor RShunt suitable for coupling to a load supply arrangement such that the voltage across the resistor is proportional to the current delivered to the said load. The voltage signal across the resistor is processed via circuitry for adjusting the voltage signal relative to a reference signal such that the resulting voltage signal may be used as a feedback signal to control the commutation of a converter device. The current sensing resistor Rshunt may be located in the converter device with one end connected to a junction between a high-side switching device and a low-side switching device of a half bridge arrangement and the other end being connected to the load. Analog or digital circuitry arrangements may be employed for processing the voltage signal.
-
公开(公告)号：FR2755766A1
公开(公告)日：1998-05-15
申请号：FR9714028
申请日：1997-11-07
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , CLEMENTE STEFANO , CHEY CHRISTOPHER
Abstract: A current sensing circuit including a shunt resistor coupled, at one end, to the low-side transistor of a half bridge circuit and, at its other end, to a load. The voltage sensed across the shunt resistor is proportional to the current delivered to the load. A level shifting circuit is provided to transpose the sensed voltage to a low voltage signal which can be fed back to control commutation of the transistors in the half bridge circuit.
-
公开(公告)号：GB2307605A
公开(公告)日：1997-05-28
申请号：GB9621139
申请日：1996-10-10
Applicant: INT RECTIFIER CORP
Inventor： DUBHASHI AJIT , AFTANDILIAN LEON
IPC: H01L27/04 , H01L29/78 , H02M1/08 , H02M7/537 , H02M7/538 , H03B1/00 , H03F1/52 , H03K17/06 , H03K17/16
Abstract: In a level shifted high voltage MOSgate device driver which drives MOSgate devices such as IGBTs and power MOSFETs, effects of negative voltage swings caused by currents commutating through LS1 and LS2 inductances in the power circuits are avoided due to several measures. First, the values of the inductances LS1 and LS2 are reduced by keeping short conductor lengths, by other layout/wire bonding techniques to reduce the values of the LS1 and LS2 inductances. The external, charging capacitor Cb value is increased substantially to reduce the voltage buildup on the internal circuitry. A typical value is 0.47 mu F, for a given circuit, IGBT and layout combination. The size of the CVCC capacitor is selected to keep the supply voltage as stiff as possible. Preferably, CVCC is at about ten times the value of the sum of the Cb capacitance in the circuit. The resistance Rb in the bootstrap path is reduced as much as possible, preferably to zero. Finally, a resistor RCOM is optionally added between the common nodes of the driver circuit and the power device circuit.
-
-
-
-
-
-
-
-
-
Search Results
46
records
(took 0.024 seconds)
