Error management in a memory device

    公开(公告)号:GB2502700A

    公开(公告)日:2013-12-04

    申请号:GB201308311

    申请日:2010-10-26

    Applicant: INTEL CORP

    Abstract: A memory controller (110) includes a logic unit (112) to provide a command, and a parity bit signal (14) associated with the command, to one or more memory devices (120). The logic unit is further to detect 505 whether an indication of a parity error of the command is received. The logic unit is further adapted to, responsive to a detection of the indication of the parity error: wait 525 until all of one or more commands sent before the command with the parity error to the one or more memory devices have completed execution; send (625, 630) a pre-charge command and a refresh command to all memory devices, and determine which one of the one or more memory devices has received the command with the parity error. In other embodiments, the controller includes logic to detect whether an indication of a cyclic redundancy check (CRC) error and the one or more memory devices (120) includes a mode register (122) and error-handing logic (124) that asserts a continuous alert signal responsive to a parity error and a pulse responsive to a CRC error.

    Memory system, synchronous dynamic random access memory device and memory controller therefor

    公开(公告)号:GB2513233A

    公开(公告)日:2014-10-22

    申请号:GB201402999

    申请日:2010-10-26

    Applicant: INTEL CORP

    Abstract: A memory system 100 includes memory controller 110 having error handling logic 112 to compute parity of address signal bits and command signal bits of a command to be sent to RAM memory module 120 and being configured to provide a parity bit signal 140 based on said computed parity when sending the command to memory module 120. Memory module 120 has mode register 122 and error handling logic 124 adapted to detect if the received command has any command/address (C/A) parity error or any cyclic redundancy check (CRC) error. On detection of a parity error, the memory module ignores the received command, stores the command bits and addresses bits of the command in the mode register, and asserts an error indication signal, e.g. a continuous indication signal, to the memory controller. When a CRC error in the command is detected, memory module asserts an indication signal, e.g. for a number of pulses, to the memory controller. Memory controller is further configured to determine from said indication signal whether a parity or a CRC error is present in the command and to perform a recovery mechanism to recover from the parity or CRC error.

    Verfahren und System zur Fehlerbehandlung bei einem Speichergerät

    公开(公告)号:DE102010053281A1

    公开(公告)日:2011-08-04

    申请号:DE102010053281

    申请日:2010-12-02

    Applicant: INTEL CORP

    Abstract: Ein Verfahren und System zur Fehlerbehandlung bei einem Speichergerät. Bei einer erfindungsgemäßen Ausführungsform kann das Speichergerät Befehls- und Adress-Paritätsfehler und Fehler bei der zyklischen Redundanzprüfung verarbeiten. Bei einer erfindunen, ob ein empfangener Befehl irgendwelche Paritätsfehler aufweist, indem bestimmt wird, ob die Befehlsbits oder die Adressbits des empfangenen Befehls irgendwelche Paritätsfehler aufweisen. Wird ein Paritätsfehler oder Fehler bei der zyklischen Redundanzprüfung bei dem empfangenen Befehl erkannt, wird ein Fehlerverarbeitungsmechanismus ausgelöst, um den falschen Befehl zu beheben.

Patent Agency Ranking