公开(公告)号：WO2004030208A2

公开(公告)日：2004-04-08

申请号：PCT/US2003/029532

申请日：2003-09-17

Applicant: INTEL CORPORATION

Inventor： WANG, Li-Peng ,  MA, Qing ,  YANKOVICH, Israel ,  BUTLER, Richard

IPC: H03H3/02

CPC classification number: H03H3/02 ,  H03H9/02133 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator formed on a substrate includes a layer of piezoelectric material having a first major surface, and a second major surface sandwiched between a first conductive and a second conductive layer. The substrate on which the film bulk acoustic resonator is formed has an opening therein which exposes the first conductive layer of the film bulk acoustic resonator. The opening is substantially in the shape of a parallelogram having a first pair of parallel sides and a second pair of parallel sides. One of the first pair of parallel sides makes an angle at other than 90 degrees with one of the second pair of parallel sides.

Abstract translation: 形成在基板上的薄膜体声波谐振器包括具有第一主表面的压电材料层和夹在第一导电层和第二导电层之间的第二主表面。 其上形成有膜体声波谐振器的基板在其中具有暴露薄膜体声波谐振器的第一导电层的开口。 开口基本上具有平行四边形的形状，该平行四边形具有第一对平行边和第二对平行边。 第一对平行边之一与第二对平行边之一形成不同于90度的角度。

公开(公告)号：WO2004021383A2

公开(公告)日：2004-03-11

申请号：PCT/US2003/027383

申请日：2003-08-28

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  RAVI, Kramadhati ,  RAO, Valluri

IPC: H01H59/00

CPC classification number: H01P1/127 ,  H01H59/0009 ,  H01H2001/0052

公开(公告)号：WO2004017351A2

公开(公告)日：2004-02-26

申请号：PCT/US2003/025632

申请日：2003-08-13

Applicant: INTEL CORPORATION

Inventor： MA, Qing

IPC: H01H59/00

CPC classification number: H01H1/0036 ,  H01H37/5409 ,  H01H2001/0042 ,  H01H2037/008

Abstract: A microelectromechanical system (MEMS) that includes a first electro-thermal actuator, a second electro-thermal actuator and a beam having a first side and a second side. The first electro-thermal actuator applies a force to the first side of the beam as current passes through the first electro-thermal actuator and the second electro-thermal actuator applies a force to the second side of the beam as current passes through the second electro-thermal actuator.

Abstract translation: 一种包括第一电热致动器，第二电热致动器和具有第一侧和第二侧的梁的微机电系统（MEMS）。 当电流通过第一电热致动器时，第一电热致动器向梁的第一侧施加力，并且当电流通过第二电热致动器时，第二电热致动器向梁的第二侧施加力 热致动器。

公开(公告)号：WO2003084862A3

公开(公告)日：2003-10-16

申请号：PCT/US2003/009620

申请日：2003-03-27

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  RAO, Valluri ,  WANG, Li-Peng ,  TRAN, Quan ,  HECK, John

IPC: B81C3/00

Abstract: A microelectromechanical system (32) may be enclosed in a hermetic cavity (44) defined by joined, first and second semiconductor structures (14, 12). The joined structures (14, 12) may be sealed by a soldier sealing ring (18), which extends completely around the cavity (44). One of the semiconductor structures (14, 12) may have the system (32) formed thereon and an open area (38) may be formed from the underside of the structure (14, 12) and may be closed by covering with a suitable film (20) in one embodiment.

公开(公告)号：WO2003083883A2

公开(公告)日：2003-10-09

申请号：PCT/US2003/003798

申请日：2003-02-07

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  BERRY, Michele ,  WONG, Daniel ,  RAO, Valluri ,  HECK, John

IPC: H01G

CPC classification number: B81B7/0006 ,  H01L23/10 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A MEMS device (14) may be formed in a hermetic cavity (42) by sealing a pair of semiconductor structures (22, 32) to one another, enclosing the MEMS device (12). The two structures (22, 32) may be coupled using surface mount techniques as one example, so that the temperatures utilized may be compatible with many MEMS applications. Electrical interconnection layers (40) in one or the other of these structures may be utilized to allow electrical interconnections from the exterior world to the MEMS components (14) within the cavity (42).

Abstract translation: 通过将一对半导体结构（22,32）彼此密封，封装MEMS器件（12），可以在密封腔（42）中形成MEMS器件（14）。 作为一个示例，两个结构（22,32）可以使用表面安装技术耦合，使得所利用的温度可以与许多MEMS应用兼容。 这些结构中的一个或另一个中的电互连层（40）可用于允许从外部世界到腔体（42）内的MEMS部件（14）的电互连。

公开(公告)号：WO2003052927A1

公开(公告)日：2003-06-26

申请号：PCT/US2002/040511

申请日：2002-12-17

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  WANG, Li-Peng ,  RAO, Valluri

IPC: H03H3/02

CPC classification number: H03H9/172 ,  H03H3/02 ,  H03H9/586 ,  Y10T29/42

Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

Abstract translation: 在具有主表面的基板上形成膜体声波谐振器。 薄膜体声波谐振器包括细长的叠层。 细长堆叠包括一层位于压电材料层的第一表面上的第一导电层和沉积在该压电材料层的第二表面上的第二导电层之间的压电材料。 细长的堆叠被定位成相对于基底的主表面基本垂直。 第一和第二导电层基本上同时并在一个处理步骤中放置在压电材料层上。 衬底的主表面处于水平面，膜体声波谐振器的堆叠处于基本垂直的平面。 形成的谐振器结构可以用作谐振器或滤波器。

公开(公告)号：WO2002101924A1

公开(公告)日：2002-12-19

申请号：PCT/US2002/016468

申请日：2002-05-24

Applicant: INTEL CORPORATION

Inventor： MA, Qing ,  BERLIN, Andrew

IPC: H03H9/24

CPC classification number: H03H9/24

Abstract: A method for varying the resonance frequency of a resonator beam is disclosed. The method comprises first manufacturing a resonator beam having a first end and a second end. The resonator beam is suspended above a substrate by the first end and the second end. At least one end of the resonator beam is connected to an actuator that applies an actuation force to the resonator beam to apply tensile strain or compressive strain onto said resonator beam. By varying the amount of actuation force, the resonance frequency of the resonator beam may be tuned. Additionally, by varying the magnitude and direction of the actuation force, the resonator beam may be used as a temperature sensor or a temperature compensated resonator.

Abstract translation: 公开了一种用于改变谐振器束的谐振频率的方法。 该方法包括首先制造具有第一端和第二端的谐振器束。 谐振器束由第一端和第二端悬置在衬底上。 谐振器梁的至少一端连接到致动器，致动器向谐振器梁施加致动力，以将拉伸应变或压缩应变施加到所述谐振器梁上。 通过改变致动力的量，可以调谐谐振器束的谐振频率。 此外，通过改变致动力的大小和方向，谐振器光束可以用作温度传感器或温度补偿谐振器。

公开(公告)号：WO2007002549A1

公开(公告)日：2007-01-04

申请号：PCT/US2006/024724

申请日：2006-06-23

Applicant: INTEL CORPORATION ,  HECK, John ,  MA, Qing ,  TRAN, Quan ,  CHOU, Tsung-Kuan ,  MELKI, Joseph ,  BAR, Hanan

Inventor： HECK, John ,  MA, Qing ,  TRAN, Quan ,  CHOU, Tsung-Kuan ,  MELKI, Joseph ,  BAR, Hanan

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/0013 ,  B81B2201/014 ,  H01H2059/0063 ,  H01H2059/0072

Abstract: An electromechanical switch (l00) includes an actuation electrode (110), an anchor (115), a cantilever electrode (105), a contact (120), and signal lines. The actuation electrode (110) and anchor (115) are mounted to a substrate (130). The cantilever electrode (105) is supported by the anchor (115) above the actuation electrode (110). The contact (120) is mounted to the cantilever electrode (105). The signal lines are positioned to form a closed circuit with the contact (120) when an actuation voltage is applied between the actuation electrode (110) and the cantilever electrode (105) causing the cantilever electrode (105) to bend towards the actuation electrode (110) in a zipper like movement starting from a distal end of the cantilever electrode (105).

Abstract translation: 机电开关（100）包括致动电极（110），锚固件（115），悬臂电极（105），触点（120）和信号线。 致动电极（110）和锚固件（115）安装到基底（130）上。 悬臂电极（105）由致动电极（110）上方的锚（115）支撑。 接触件（120）安装到悬臂电极（105）。 当在致动电极（110）和悬臂电极（105）之间施加致动电压时，信号线被定位成与触点（120）形成闭合电路，使得悬臂电极（105）向致动电极 110）以从悬臂电极（105）的远端开始的拉链状运动。

公开(公告)号：WO2006065693A1

公开(公告)日：2006-06-22

申请号：PCT/US2005/044776

申请日：2005-12-09

Applicant: INTEL CORPORATION ,  MA, Qing ,  LIN, Xintian ,  BETTNER, Allen

Inventor： MA, Qing ,  LIN, Xintian ,  BETTNER, Allen

IPC: H01Q13/10

CPC classification number: H01Q13/103

Abstract: Briefly, in accordance with one embodiment of the invention, a slot antenna may include a primary slot (210) and one or more secondary slots (212). The size of the antenna may be reduced by adding one or more of the secondary slots which may add additional inductance to the antenna. Furthermore, the size of the antenna may be reduced by increasing the inductance of the secondary slots via increasing the length of the slots or by changing the shape of the slots. The antenna may include one or more MEMS varactors (216) coupled to one or more of the secondary slots. The resonant frequency of the slot antenna may be tuned to a desired frequency by changing the capacitance value of one or more of the MEMS varactors to a desired capacitance value.

Abstract translation: 简而言之，根据本发明的一个实施例，时隙天线可以包括主时隙（210）和一个或多个辅助时隙（212）。 可以通过增加一个或多个次级槽来减小天线的尺寸，这可能为天线增加额外的电感。 此外，可以通过增加槽的长度或通过改变槽的形状来增加辅助槽的电感来减小天线的尺寸。 天线可以包括耦合到一个或多个次级插槽的一个或多个MEMS可变电抗器（216）。 可以通过将一个或多个MEMS可变电抗器的电容值改变为期望的电容值来将缝隙天线的谐振频率调谐到期望的频率。

公开(公告)号：WO2005114836A1

公开(公告)日：2005-12-01

申请号：PCT/US2005/012910

申请日：2005-04-13

Applicant: INTEL CORPORATION ,  MA, Qing ,  WANG, Li-Peng ,  SHIM, Dong ,  RAO, Valluri

Inventor： MA, Qing ,  WANG, Li-Peng ,  SHIM, Dong ,  RAO, Valluri

IPC: H03H3/04

CPC classification number: H03H3/04 ,  H03H2003/0471 ,  H03H2003/0478

Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

Abstract translation: 可以使用平版印刷技术在相同的集成电路上形成多个带状薄膜体声共振器。 结果，可以实现大量生产可重现的部件，其中制造的谐振器被设计成具有不同的频率。