公开(公告)号：US11515424B2

公开(公告)日：2022-11-29

申请号：US16270826

申请日：2019-02-08

Applicant: Intel Corporation

Inventor： Said Rami ,  Hyung-Jin Lee ,  Saurabh Morarka ,  Guannan Liu ,  Qiang Yu ,  Bernhard Sell ,  Mark Armstrong

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/40 ,  H01L29/08 ,  H01L21/265 ,  H01L29/165

Abstract: Disclosed herein are field-effect transistors with asymmetric gate stacks. An example transistor includes a channel material and an asymmetric gate stack, provided over a portion of the channel material between source and drain (S/D) regions. The gate stack is asymmetric in that a thickness of a gate dielectric of a portion of the gate stack closer to one of the S/D regions is different from that of a portion of the gate stack closer to the other S/D region, and in that a work function (WF) material of a portion of the gate stack closer to one of the S/D regions is different from a WF material of a portion of the gate stack closer to the other S/D region. Transistors as described herein exploit asymmetry in the gate stacks to improve the transistor performance in terms of high breakdown voltage, high gain, and/or high output resistance.

公开(公告)号：US20220059699A1

公开(公告)日：2022-02-24

申请号：US17499605

申请日：2021-10-12

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

公开(公告)号：US11107920B2

公开(公告)日：2021-08-31

申请号：US16509421

申请日：2019-07-11

Applicant: Intel Corporation

Inventor： Michael Jackson ,  Anand Murthy ,  Glenn Glass ,  Saurabh Morarka ,  Chandra Mohapatra

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/32 ,  H01L29/165

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.