MICROELECTRONIC ASSEMBLIES HAVING AN INTEGRATED CAPACITOR

    公开(公告)号:US20200212020A1

    公开(公告)日:2020-07-02

    申请号:US16234302

    申请日:2018-12-27

    Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

    MICROELECTRONIC ASSEMBLIES HAVING AN INTEGRATED CAPACITOR

    公开(公告)号:US20210111166A1

    公开(公告)日:2021-04-15

    申请号:US17129269

    申请日:2020-12-21

    Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

    Magnetic core inductors
    19.
    发明授权

    公开(公告)号:US11651885B2

    公开(公告)日:2023-05-16

    申请号:US16637006

    申请日:2017-09-28

    CPC classification number: H01F17/0013 H01F27/255 H01F2017/002 H01F2017/0066

    Abstract: Described herein are magnetic core inductors (MCI) and methods for manufacturing magnetic core inductors. A first embodiment of the MCI can be a snake-configuration MCI. The snake-configuration MCI can be formed by creating an opening in a base material, such as copper, and providing a nonconductive magnetic material in the opening. The inductor can be further formed by forming plated through holes into the core material. The conductive elements for the inductor can be formed in the plated through holes. The nonconductive magnetic material surrounds each conductive element and plated through hole. In embodiments, a layered coil inductor can be formed by drilling a laminate to form a cavity through the laminate within the metal rings of the layered coil inductor. The nonconductive magnetic material can be provided in the cavity.

    Microelectronic assemblies having an integrated capacitor

    公开(公告)号:US11557579B2

    公开(公告)日:2023-01-17

    申请号:US17129269

    申请日:2020-12-21

    Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

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