公开(公告)号：JP2003077910A

公开(公告)日：2003-03-14

申请号：JP2001265047

申请日：2001-08-31

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： IKEDA NORIHIKO ,  SHINODA TOMOTAKA ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To obtain a coating solution for forming a ferroelectric thin film, with which the ferroelectric film that has no cracks and uniformity is formed by one time coating and baking on a substrate such as platinum, iridium, and iridium oxide.
SOLUTION: This coating solution for forming the ferroelectric thin film contains a solvent expressed by a general formula (1), R
1 O(CHCH
3 CH
2 O)
2 R
2 (each of R
1 and R
2 expresses a monovalent organic group independently selected among hydrogen atom, 1-4C alkyl group or CH
3 CO-) and an organometallic compound.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了获得形成铁电薄膜的涂布溶液，通过在铂，铱和氧化铱等基材上进行一次涂布和烘烤，形成不具有裂纹和均匀性的铁电体膜。 溶液：用于形成铁电薄膜的涂布液含有由通式（1）表示的溶剂，R 1 O（CHCH 3 CH 2 O）2 R 2（R 1和R 2） 表示独立地选自氢原子，1-4C烷基或CH 3 CO-）中的一价有机基团和有机金属化合物。

公开(公告)号：JP2001110237A

公开(公告)日：2001-04-20

申请号：JP28965799

申请日：1999-10-12

Applicant: JSR CORP

Inventor： KOMATSU SATOSHI ,  IKEDA NORIHIKO ,  YAMADA KINJI

IPC: B05D5/12 ,  B05D7/24 ,  C01G29/00 ,  C01G35/00 ,  C09D1/00 ,  C09D5/00 ,  H01B3/12

Abstract: PROBLEM TO BE SOLVED: To provide a ferroelectric thin film forming application liquid capable of forming a ferroelectric thin film at a low cost which contains effective components soluble in general organic solvent and has excellent reserving stability and reproductivity, a small leak current and a great film density, its manufacture and the ferroelectric thin film formed by applying and hardening the application liquid. SOLUTION: A ferroelectric thin film forming application liquid contains organic metal compound, the organic metal compound being formed by replacing hydroxyl groups and alkoxyl groups or one of them of hydrolyzed metal alkoxide containing two or more types of metal elements in one molecule with other functional groups than the hydroxyl groups.

公开(公告)号：JP2013254084A

公开(公告)日：2013-12-19

申请号：JP2012129404

申请日：2012-06-06

Applicant: JSR CORP

Inventor： IKUI NORITO ,  IKEDA NORIHIKO

IPC: G03F7/039 ,  C07D307/33 ,  C08F24/00

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition superior in LWR performance, resolution, rectangularity of a cross-sectional shape, and focal depth.SOLUTION: A photoresist composition contains [A] a polymer having a structural unit represented by the following formula (1), and [B] an acid generator.

公开(公告)号：JP2013057925A

公开(公告)日：2013-03-28

申请号：JP2012062870

申请日：2012-03-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SAKAKIBARA HIROKAZU ,  IKEDA NORIHIKO

IPC: G03F7/039 ,  C08F20/28 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition which is excellent in not only basic properties such as sensitivity and resolution, but also in lithographic performance with indexes of MEEF, DOF and the like, and capable of forming a pattern with a suitable cross sectional shape, and a method of forming a negative resist pattern by using the composition.SOLUTION: The method of forming a negative resist pattern includes a step of (1) forming a resist film by using the photoresist composition, a step of (2) exposing the resist film, and a step of (3) developing the exposed resist film by using organic solvent developer. The photoresist composition includes (A) a polymer containing a structural unit (I) represented by the expression (1), and (B) an acid generator.

Abstract translation: 要解决的问题：提供不仅具有优异的基本性质如灵敏度和分辨率，而且在具有MEEF，DOF等指标的光刻性能方面优异的光刻胶组合物，并且能够形成具有 合适的横截面形状，以及通过使用该组合物形成负型抗蚀剂图案的方法。 解决方案：形成负型抗蚀剂图案的方法包括以下步骤：（1）通过使用光致抗蚀剂组合物形成抗蚀剂膜，（2）曝光抗蚀剂膜的步骤，和（3）显影 通过使用有机溶剂显影剂曝光抗蚀剂膜。 光致抗蚀剂组合物包含（A）含有由式（1）表示的结构单元（I）的聚合物和（B）酸产生剂。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010160346A

公开(公告)日：2010-07-22

申请号：JP2009002730

申请日：2009-01-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAJIMA HIROMITSU ,  IKEDA NORIHIKO ,  SAKAI KAORI ,  HARADA SAKI

IPC: G03F7/039 ,  C08F220/12 ,  C08F220/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which has a large depth of focus and ensures small LWR and MEEF, excellent pattern collapse resistance and excellent development defect control property.
SOLUTION: The radiation-sensitive resin composition includes: a polymer (A) having one or more repeating units represented by general formulae (1) and (2) and one or more repeating units (3) having a carbonate structure; and a radiation-sensitive acid generator (B).
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有大的聚焦深度并且确保小的LWR和MEEF的良好的抗折叠性和优异的显影缺陷控制性的辐射敏感性树脂组合物。 解决方案：辐射敏感性树脂组合物包括：具有一个或多个由通式（1）和（2）表示的重复单元的聚合物（A）和具有碳酸酯结构的一个或多个重复单元（3） 和辐射敏感酸产生剂（B）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008147688A

公开(公告)日：2008-06-26

申请号：JP2008005310

申请日：2008-01-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IKEDA NORIHIKO ,  NISHIMOTO KAZUO ,  HATTORI MASAYUKI ,  KAWAHASHI NOBUO

IPC: H01L21/304 ,  B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersion element for chemical mechanical polishing which suppresses generation of polishing scratches without decelerating polishing speed, and to provide a method for removing extra insulation film in a minute element separation process. SOLUTION: The aqueous dispersion element for chemical mechanical polishing contains 1.5 mass% or less of abrasive grains including ceria and mean dispersion grain diameter of the abrasive grains is 1.0 μm or more. The chemical mechanical polishing method polishes insulation films using the aqueous dispersion element for chemical mechanical polishing. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水分散元件，其抑制抛光划痕的产生而不减速抛光速度，并提供在微元分离过程中除去额外的绝缘膜的方法。 解决方案：用于化学机械抛光的水性分散体含有包括二氧化铈的磨料颗粒的1.5质量％以下，磨粒的平均分散粒径为1.0μm以上。 化学机械抛光方法使用化学机械抛光用水性分散体抛光绝缘膜。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2003297819A

公开(公告)日：2003-10-17

申请号：JP2002095498

申请日：2002-03-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： HAYASHI EIJI ,  IKEDA NORIHIKO ,  SHIODA ATSUSHI

IPC: H01L21/768 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a film which is a coating film having an even and appropriate thickness and a superior dielectric constant and mechanical strength, and which has superior storage stability, as an interlayer insulation film in a semiconductor device or the like. SOLUTION: A method of manufacturing a carbosilane-based film for a semiconductor device includes a process of irradiating a high-energy beam such as electron beams, ultraviolet rays, and X-rays on a film containing a carbosilane compound. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供作为半导体器件中的层间绝缘膜或具有优异的介电常数和机械强度的具有优良的储存稳定性的涂膜，其具有均匀且适当的厚度， 喜欢。 解决方案：制造用于半导体器件的碳硅烷类膜的方法包括在含有碳硅烷化合物的膜上照射诸如电子束，紫外线和X射线的高能束的方法。 版权所有（C）2004，JPO

公开(公告)号：JP2003068730A

公开(公告)日：2003-03-07

申请号：JP2001256557

申请日：2001-08-27

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： IKEDA NORIHIKO ,  SHINODA TOMOTAKA ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: H01L21/8247 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide coating solution to form a ferro-electric thin film on a substrate.
SOLUTION: The coating solution for forming ferro-electric thin film, which contains (A) compound containing boron atoms and (B) organo-metallic compound having at least one selected from Ta, Bi, Sr, Nb, Pb, Zr and Ti as a constituent element.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供涂布溶液以在基材上形成铁电薄膜。 解决方案：含有（A）含有硼原子的化合物和（B）具有选自Ta，Bi，Sr，Nb，Pb，Zr和Ti中的至少一种的有机金属化合物的铁电薄膜用涂布溶液， 构成要素。

公开(公告)号：JP2002193616A

公开(公告)日：2002-07-10

申请号：JP2001187835

申请日：2001-06-21

Applicant: JSR CORP

Inventor： IKEDA NORIHIKO ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: C01B13/18 ,  C01G1/02 ,  C01G35/00 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a coating fluid for forming a ferroelectric thin film which contains effective components soluble in general organic solvent and has good preserving stability and reproductivity and which is also capable of forming the ferroelectric thin film by firing at a low temperature, and provide a method of producing the same, and also provide the ferroelectric thin film using the method. SOLUTION: The coating fluid for forming the ferroelectric thin film includes a first organic metal compound (A) in which carboxyl groups is substituted for at least a part of functional groups of hydrolyzed condensate that is obtained by hydrolysis and condensation of a metal alkoxide (a), and a second organic metal compound (B) which comprises at least one compound selected from among a metal alkoxide (b) having a metal different from that of the above metal alkoxide (a), a hydrolyzed condensaste (c) which is obtained by hydrolysis and condensation of the metal alkoxide (b), a compound (d) which is formed by substituting carboxyl groups for at least a part of the functional groups of the metal oxide (b), and a compound (e) which is formed by substituting carboxyl groups for at least a part of the functional groups of the hydrolyzed condensate (c).

公开(公告)号：JP2013213951A

公开(公告)日：2013-10-17

申请号：JP2012084391

申请日：2012-04-02

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KASAHARA KAZUKI ,  IKEDA NORIHIKO

IPC: G03F7/039 ,  C08F220/10 ,  C08F224/00 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition that has excellent lithographic performance with MEEF, DOF, LWR or the like as indices, in addition to excellent basic properties such as sensitivity.SOLUTION: A photosensitive composition contains a polymer component composed of a structural unit represented by formula (1) and a structural unit represented by formula (2), an acid generator, and a triphenylsulfonium compound.

Abstract translation: 要解决的问题：提供具有优异的光刻性能的光刻胶组合物，除了具有良好的基本性能如灵敏度之外，还具有作为指标的MEEF，DOF，LWR等作为指标。解决方案：光敏组合物含有由结构 由式（1）表示的单元和由式（2）表示的结构单元，酸产生剂和三苯基锍化合物。