公开(公告)号：WO2006066100A2

公开(公告)日：2006-06-22

申请号：PCT/US2005045661

申请日：2005-12-15

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRED C

Inventor： BOYD JOHN M ,  REDEKER FRED C

IPC: H01L21/78 ,  G03F7/20 ,  H01L21/00

CPC classification number: H01L21/02052 ,  B08B3/04 ,  B23K26/1224 ,  B23K26/146 ,  B23K26/40 ,  B23K2203/50 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/78

Abstract: A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described.

Abstract translation: 基板处理系统包括第一可动表面张力梯度装置，切割装置和系统控制器。 第一可移动表面张力梯度装置能够支撑第一弯液面内的第一过程。 第一弯液面被支撑在第一表面张力梯度装置和基板的第一表面之间。 能够相对于基板的第一表面移动的第一可动表面张力梯度装置。 切割装置被定向到期望的切割位置。 期望的切割位置被弯液面包围。 系统控制器耦合到切割装置和表面张力梯度装置。 系统控制器包括处理配方。 还描述了用于切割衬底的方法。

公开(公告)号：WO2004074931A3

公开(公告)日：2005-01-27

申请号：PCT/US2004003179

申请日：2004-02-04

Applicant: LAM RES CORP ,  BOYD JOHN M ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  TREUR RANDOLPH E ,  THIE WILLIAM

Inventor： BOYD JOHN M ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  TREUR RANDOLPH E ,  THIE WILLIAM

IPC: B08B3/12 ,  H01L21/00 ,  B08B7/00 ,  C25F1/00

CPC classification number: H01L21/67057 ,  B08B3/12

Abstract: A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided.

Abstract translation: 提供一种清洗半导体衬底的方法。 该方法通过产生在与半导体衬底的表面基本上垂直的方向上定向的声能来启动。 然后，产生与半导体衬底的表面大致平行的方向的声能。 可以同时产生或交替地产生声能的每个取向。 还提供了用于清洁半导体衬底的系统和设备。

公开(公告)号：WO2007021654A3

公开(公告)日：2007-11-08

申请号：PCT/US2006030773

申请日：2006-08-07

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  HEMKER DAVID J

IPC: B08B3/00 ,  B08B3/04 ,  H01L21/00

CPC classification number: G03F7/30 ,  B08B3/04 ,  G03F7/3092 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

Abstract: A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.

Abstract translation: 第一接近头被配置为在衬底上限定光致抗蚀剂显影剂溶液的弯液面。 弯液面应限定在第一邻近头部的底部和基底之间。 第二邻近头被配置为在衬底上限定冲洗弯液面并从衬底移除冲洗弯月面。 第二接近头被定位成相对于基板上的第一和第二接近头的遍历方向跟随第一邻近头。 将衬底暴露于光致抗蚀剂显影剂溶液的弯液面使得先前照射在衬底上的光致抗蚀剂材料被显影以形成图案化的光致抗蚀剂层。 第一和第二接近头允许在显影过程中精确地控制光致抗蚀剂显影剂溶液在基底上的停留时间。

公开(公告)号：WO2007005230A3

公开(公告)日：2007-04-26

申请号：PCT/US2006023354

申请日：2006-06-15

Applicant: LAM RES CORP ,  KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

IPC: H01L21/00 ,  C03B33/00 ,  H01L21/02 ,  H01L21/64 ,  H01L21/70

CPC classification number: H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes theresulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract translation: 压力保持在一定体积内，在该体积内半导体晶片所处的压力足以将前体流体的液态保持为非牛顿流体。 前体流体布置成接近待从半导体晶片移除的材料，同时保持前体流体处于液态。 压力在半导体晶片所处的体积内减小，使得体积内设置在晶片上的前体流体转变成非牛顿流体。 前体流体的膨胀和前体流体相对于晶片在转变成非牛顿流体期间的运动导致所产生的非牛顿流体从半导体晶片上去除材料。

公开(公告)号：WO02053322A3

公开(公告)日：2003-05-01

申请号：PCT/US0148658

申请日：2001-12-13

Applicant: LAM RES CORP ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  KISTLER ROD

Inventor： BOYD JOHN M ,  GOTKIS YEHIEL ,  KISTLER ROD

IPC: B24B37/04 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/26 ,  B24B49/04 ,  B24B51/00

Abstract: A system and method for polishing semiconductor wafers includes a variable partial pad-wafer overlap polisher having a reduced surface area, fixed-abrasive polishing pad and a polisher having a non-abrasive polishing pad for use with an abrasive slurry. The method includes first polishing a wafer with the variable partial pad-wafer overlap polisher and the fixed-abrasive polishing pad and then polishing the wafer in a dispersed-abrasive process until a desired wafer thickness is achieved.

Abstract translation: 用于抛光半导体晶片的系统和方法包括具有减小的表面积的可变部分焊盘 - 晶片重叠抛光机，固定研磨抛光垫和具有用于磨料浆料的非磨料抛光垫的抛光机。 该方法包括首先用可变部分焊盘 - 晶片重叠抛光机和固定磨料抛光垫抛光晶片，然后以分散研磨工艺抛光晶片，直到达到所需的晶片厚度。

公开(公告)号：WO2008002977A3

公开(公告)日：2008-03-06

申请号：PCT/US2007072241

申请日：2007-06-27

Applicant: LAM RES CORP ,  DORDI YEZDI ,  THIE WILLIAM ,  BOYD JOHN M ,  REDEKER FRITZ C ,  OWCZARZ ALEKSANDER

Inventor： DORDI YEZDI ,  THIE WILLIAM ,  BOYD JOHN M ,  REDEKER FRITZ C ,  OWCZARZ ALEKSANDER

IPC: C23C26/00 ,  B05D1/18

CPC classification number: H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

Abstract: An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

Abstract translation: 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：WO2006088713A2

公开(公告)日：2006-08-24

申请号：PCT/US2006004504

申请日：2006-02-08

Applicant: LAM RES CORP ,  YUN SEOKMIN ,  BOYD JOHN M ,  WILCOXSON MARK ,  DE LARIOS JOHN

Inventor： YUN SEOKMIN ,  BOYD JOHN M ,  WILCOXSON MARK ,  DE LARIOS JOHN

IPC: C23G1/00 ,  B08B3/00 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00

CPC classification number: H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

Abstract: A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

Abstract translation: 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

公开(公告)号：WO2006012174A2

公开(公告)日：2006-02-02

申请号：PCT/US2005022172

申请日：2005-06-23

Applicant: LAM RES CORP ,  KOROLIK MIKHAIL ,  BOYD JOHN M ,  MIKHAYLICH KATRINA ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  DE LARIOS JOHN M

Inventor： KOROLIK MIKHAIL ,  BOYD JOHN M ,  MIKHAYLICH KATRINA ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  DE LARIOS JOHN M

IPC: H01L21/3065

CPC classification number: H01L21/31133 ,  H01L21/6708

Abstract: One embodiment provides a method of processing a substrate. The method includes applying a solution to a surface of a substrate. At least one reacting species has been produced by dissociation of the solution by applying energy such as a light to the solution. A first material on the substrate is reacted and removing the reacted first material. A system for processing a substrate is also described.

Abstract translation: 一个实施例提供了一种处理衬底的方法。 该方法包括将溶液施加到基底的表面。 至少一种反应物质是通过将溶液中的光等能量进行解离来解离的。 将基板上的第一材料反应并除去反应的第一材料。 还描述了一种用于处理衬底的系统。

公开(公告)号：WO03084684A8

公开(公告)日：2005-01-13

申请号：PCT/US0307981

申请日：2003-03-13

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA

IPC: H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04

CPC classification number: H01L21/02052 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

Abstract: An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

Abstract translation: 提供了一种用于清洁半导体衬底的设备。 在本发明的实施例中，提供了能够提供局部加热的兆声波清洗器。 兆声波清洗器包括换能器和谐振器。 谐振器被配置成传播来自换能器的能量。 谐振器具有第一端和第二端，第一端可操作地耦合到换能器，并且第二端构造成在传播来自换能器的能量的同时提供局部加热。 还提供了一种通过兆声波清洗来清洁半导体衬底的系统和用于清洁半导体衬底的方法。

公开(公告)号：JP2006016692A

公开(公告)日：2006-01-19

申请号：JP2005188066

申请日：2005-06-28

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DORDI YEZDI N ,  REDEKER FRED C ,  BOYD JOHN M ,  MARASCHIN ROBERT ,  WOODS CARL

IPC: C25D7/12 ,  C25D5/04 ,  C25D19/00 ,  C25D21/08 ,  C25D21/12

CPC classification number: C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

Abstract: PROBLEM TO BE SOLVED: To provide a method for electroplating the surface of a wafer, which can perform local plating, reduce total plating current and improve the evenness of a deposit.
SOLUTION: The electroplating apparatus comprises a plating head capable of being set on the upper or lower part of the surface of a wafer and capable of being charged as an anode. The plating head enables metal plating between the surface of the wafer and the plating head when the wafer and the plating head are charged. The plating head is equipped with a voltage sensor couple capable of sensing a voltage between the plating head and the surface of the wafer and a controller capable of receiving data from the voltage sensor couple. The received date from the voltage sensor couple are used for the controller to keep a voltage to be applied by the anode substantially constant when the plating head is placed on a position above the surface of the wafer.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供可以进行局部电镀的晶片表面的电镀方法，减少总电镀电流并提高沉积物的均匀性。 解决方案：电镀装置包括能够设置在晶片表面的上部或下部并能够作为阳极充电的电镀头。 当晶片和电镀头被充电时，电镀头可以在晶片的表面和电镀头之间进行金属电镀。 电镀头配备有能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 电压传感器对的接收日期用于控制器，当电镀头放置在晶片表面上方的位置时，使阳极施加的电压基本恒定。 版权所有（C）2006，JPO＆NCIPI