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    IN-SITU LOCAL HEATING USING MEGASONIC TRANSDUCER RESONATOR
    1.
    发明公开
    IN-SITU LOCAL HEATING USING MEGASONIC TRANSDUCER RESONATOR 有权
    EINEN MEGASCHALLWANDLERRESONATOR VERWENDENDE LOKALE IN-SITU-ERWÄRMUNG

    公开(公告)号：EP1497046A4

    公开(公告)日：2009-05-13

    申请号：EP03716606

    申请日：2003-03-13

    Applicant: LAM RES CORP

    Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA

    IPC: H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04

    CPC classification number: H01L21/02052 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

    Abstract: An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

    Abstract translation: 提供了一种用于清洁半导体衬底的设备。 在本发明的实施例中，提供了能够提供局部加热的兆频超声波清洁器。 兆频超声波清洗机包括一个换能器和一个谐振器。 谐振器被配置为从换能器传播能量。 谐振器具有第一端和第二端，第一端可操作地耦合到换能器，并且第二端被配置为在传播来自换能器的能量的同时提供局部加热。 还提供了一种通过兆声波清洁来清洁半导体衬底的系统以及一种用于清洁半导体衬底的方法。

    IN-SITU LOCAL HEATING USING MEGASONIC TRANSDUCER RESONATOR
    4.
    发明申请
    IN-SITU LOCAL HEATING USING MEGASONIC TRANSDUCER RESONATOR 审中-公开
    使用MEGASONIC变压器谐振器的现场本地加热

    公开(公告)号：WO03084684A8

    公开(公告)日：2005-01-13

    申请号：PCT/US0307981

    申请日：2003-03-13

    Applicant: LAM RES CORP

    Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA

    IPC: H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04

    CPC classification number: H01L21/02052 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

    Abstract: An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

    Abstract translation: 提供了一种用于清洁半导体衬底的设备。 在本发明的实施例中，提供了能够提供局部加热的兆声波清洗器。 兆声波清洗器包括换能器和谐振器。 谐振器被配置成传播来自换能器的能量。 谐振器具有第一端和第二端，第一端可操作地耦合到换能器，并且第二端构造成在传播来自换能器的能量的同时提供局部加热。 还提供了一种通过兆声波清洗来清洁半导体衬底的系统和用于清洁半导体衬底的方法。

    5.
    发明专利
    未知

    公开(公告)号：DE69939987D1

    公开(公告)日：2009-01-08

    申请号：DE69939987

    申请日：1999-08-31

    Applicant: LAM RES CORP

    Inventor： SVIRCHEVSKI JULIA ,  MIKHAYLICH KATRINA ,  ZHANG JACKIE

    IPC: C23F1/08 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

    Abstract: The present invention describes a method of cleaning a substrate wherein the substrate is placed into a first brush station while a chemical solution is delivered to the first brush station at a desired cleaning level. The substrate is then scrubbed in the first brush station. After the substrate is scrubbed in the first brush station the substrate is transferred to a second brush station. The chemical solution used in the first brush station is then delivered to a brush in the second brush station in a ramp up manner in order to clean the brush in the second brush station. The delivery of the chemical solution to the second brush station is then stopped and deionized water is delivered to the second brush station. The substrate is then scrubbed using the deionized water in order to rinse the chemical solution from the substrate prior to transferring the substrate from the second brush station to another processing station. This method and apparatus applies the chemical solutions uniformly to the semiconductor substrate, reduces the volumes of chemical solutions used in a scrubbing process, and helps maintain control of the pH profile of a substrate. This system is described and illustrated in the manner it is used in conjunction with a scrubber that scrubs both sides of a semiconductor substrate.

    7.
    发明专利
    未知

    公开(公告)号：AT443343T

    公开(公告)日：2009-10-15

    申请号：AT00937934

    申请日：2000-05-30

    Applicant: LAM RES CORP

    Inventor： MIKHAYLICH KATRINA ,  RAVKIN MIKE ,  ANDERSON DON

    IPC: H01L21/00 ,  H01L21/304

    Abstract: A method and a system are provided for cleaning a surface of a wafer. The method starts by scrubbing the surface of the wafer with a cleaning brush that applies a chemical solution to the surface of the wafer. In one example, the cleaning brush implements a through the brush (TTB) technique to apply the chemicals. The scrubbing is generally performed in a brush box, with a top cleaning brush and a bottom cleaning brush. The top cleaning brush is then removed from contact with the surface of the wafer. The chemical concentration in the top brush may be maintained at substantially the same concentration that was in the brush during the scrubbing operation. Next, a flow of water (preferably de-ionized water) is delivered to the surface of the wafer. The delivery of water is preferably configured to remove substantially all of the chemical solution from the surface of the wafer before proceeding to a next cleaning operation.

    8.
    发明专利
    未知

    公开(公告)号：AT415700T

    公开(公告)日：2008-12-15

    申请号：AT99945388

    申请日：1999-08-31

    Applicant: LAM RES CORP

    Inventor： SVIRCHEVSKI JULIA ,  MIKHAYLICH KATRINA ,  ZHANG JACKIE

    IPC: C23F1/08 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

    Abstract: The present invention describes a method of cleaning a substrate wherein the substrate is placed into a first brush station while a chemical solution is delivered to the first brush station at a desired cleaning level. The substrate is then scrubbed in the first brush station. After the substrate is scrubbed in the first brush station the substrate is transferred to a second brush station. The chemical solution used in the first brush station is then delivered to a brush in the second brush station in a ramp up manner in order to clean the brush in the second brush station. The delivery of the chemical solution to the second brush station is then stopped and deionized water is delivered to the second brush station. The substrate is then scrubbed using the deionized water in order to rinse the chemical solution from the substrate prior to transferring the substrate from the second brush station to another processing station. This method and apparatus applies the chemical solutions uniformly to the semiconductor substrate, reduces the volumes of chemical solutions used in a scrubbing process, and helps maintain control of the pH profile of a substrate. This system is described and illustrated in the manner it is used in conjunction with a scrubber that scrubs both sides of a semiconductor substrate.

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