公开(公告)号：EP1782461A4

公开(公告)日：2008-05-28

申请号：EP05762857

申请日：2005-06-23

Applicant: LAM RES CORP

Inventor： KOROLIK MIKHAIL ,  BOYD JOHN M ,  MIKHAYLICH KATRINA ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  DE LARIOS JOHN M

IPC: H01L21/461 ,  B08B7/04 ,  C23C14/00 ,  H01L27/01

CPC classification number: H01L21/31133 ,  H01L21/6708

Abstract: One embodiment provides a method of processing a substrate. The method includes applying a solution to a surface of a substrate. At least one reacting species has been produced by dissociation of the solution by applying energy such as a light to the solution. A first material on the substrate is reacted and removing the reacted first material. A system for processing a substrate is also described.

公开(公告)号：EP1599298A4

公开(公告)日：2007-05-02

申请号：EP04708156

申请日：2004-02-04

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  RAVKIN MICHAEL ,  REDEKER FRED C ,  TREUR RANDOLPH E ,  THIE WILLIAM

IPC: H01L21/00 ,  B08B3/12

CPC classification number: H01L21/67057 ,  B08B3/12

Abstract: A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided.

公开(公告)号：WO0174537A9

公开(公告)日：2002-12-27

申请号：PCT/US0109887

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： BOYD JOHN M

IPC: B24B57/04 ,  B24B21/00 ,  B24B21/18 ,  B24B37/04 ,  B24D3/28 ,  B24D11/00 ,  B24D18/00 ,  H01L21/304

CPC classification number: B24D18/009 ,  B24B21/18 ,  B24B37/04 ,  B24D3/28 ,  B24D11/001

Abstract: Methods and apparatus are provided for combining the manufacturing of a fixed-abrasive substrate and the chemical mechanical planarization of semiconductor wafers using a single process path (26). An electrostatic patterning device (58) produces an electrostatic charge of a predetermined pattern and density on a backing (52). An abrasive/binding agent container (60) deposits an abrasive/binding agent mixture on the surface of the backing (52). The mixture is attracted to the backing (52) in the pattern of the electrostatic charge. A vacuum force generator (62) removes the excess abrasive/binding agent mixture from the backing (52). An UV irradiation device (64) fixes the mixture to the backing (52). A conveyor (74) carries the fixed-abrasive substrate (54) to the CMP station (66).

Abstract translation: 提供了使用单一工艺路径（26）将固定磨料基材的制造与半导体晶片的化学机械平面化相组合的方法和装置。 静电图案形成装置（58）在背衬（52）上产生预定图案和密度的静电荷。 研磨/粘合剂容器（60）将磨料/粘合剂混合物沉积在背衬（52）的表面上。 混合物以静电荷的形式被吸引到背衬（52）上。 真空力发生器（62）从背衬（52）去除多余的磨料/粘合剂混合物。 UV照射装置（64）将混合物固定到背衬（52）上。 输送机（74）将固定磨料基底（54）运送到CMP站（66）。

公开(公告)号：WO0216075A3

公开(公告)日：2002-08-15

申请号：PCT/US0122846

申请日：2001-07-19

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

Inventor： SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

IPC: B24B37/20 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  H01L21/306 ,  B24B37/04

CPC classification number: B24B37/20 ,  B24B53/017 ,  H01L21/30625

Abstract: A chemical mechanical polishing (CMP) system (200) is provided. A carrier (206) has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer (202) having a one or more formed layers to be prepared. A preparation head (208) is also included and is designed to be applied to at least a portion of the wafer (202) that is less than an entire portion of the surface of the wafer (202). Preferably, the preparation head (208) and the carrier (206) are configured to rotate in opposite directions. In addition, the preparation (208) head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer (202) to an edge of the wafer (202) and from the edge of the wafer (202) to the center of the wafer(202). A support head (212) to support the top face of the wafer is also included, as well as a conditioning head (210).

Abstract translation: 提供化学机械抛光（CMP）系统（200）。 载体（206）具有顶表面和底部区域。 载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片（202）。 还包括准备头（208）并被设计成施加到小于晶片（202）的表面的整个部分的至少一部分晶片（202）。 优选地，制备头（208）和载体（206）构造成沿相反方向旋转。 此外，准备（208）头还被配置为在从晶片（202）的中心的方向之一到晶片（202）的边缘和晶片（202）的边缘之间线性移动的同时振荡， 到晶片（202）的中心。 还包括用于支撑晶片顶面的支撑头（212），以及调节头（210）。

公开(公告)号：EP1848551A4

公开(公告)日：2010-10-27

申请号：EP06734616

申请日：2006-02-08

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  BOYD JOHN M ,  WILCOXSON MARK ,  DE LARIOS JOHN

IPC: H01L21/00

CPC classification number: H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

公开(公告)号：EP1497046A4

公开(公告)日：2009-05-13

申请号：EP03716606

申请日：2003-03-13

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  MIKHAYLICH KATRINA

IPC: H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306 ,  B08B7/04

CPC classification number: H01L21/02052 ,  B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

Abstract: An apparatus for cleaning a semiconductor substrate is provided. In embodiment of the present invention, a megasonic cleaner capable of providing localized heating is provided. The megasonic cleaner includes a transducer and a resonator. The resonator is configured to propagate energy from the transducer. The resonator has a first and a second end, the first end is operatively coupled to the transducer and the second end is configured to provide localized heating while propagating the energy from the transducer. A system for cleaning a semiconductor substrate through megasonic cleaning and a method for cleaning a semiconductor substrate is also provided.

Abstract translation: 提供了一种用于清洁半导体衬底的设备。 在本发明的实施例中，提供了能够提供局部加热的兆频超声波清洁器。 兆频超声波清洗机包括一个换能器和一个谐振器。 谐振器被配置为从换能器传播能量。 谐振器具有第一端和第二端，第一端可操作地耦合到换能器，并且第二端被配置为在传播来自换能器的能量的同时提供局部加热。 还提供了一种通过兆声波清洁来清洁半导体衬底的系统以及一种用于清洁半导体衬底的方法。

公开(公告)号：WO2007123677A3

公开(公告)日：2008-11-20

申请号：PCT/US2007007903

申请日：2007-03-27

Applicant: LAM RES CORP ,  BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  DORDI YEZDI ,  RAVKIN MICHAEL ,  DE LARIOS JOHN

IPC: B23H3/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: H01L21/32115 ,  C25F7/00

Abstract: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

Abstract translation: 提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：WO0174535A9

公开(公告)日：2003-10-23

申请号：PCT/US0109870

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： ZHAO YUEXING ,  XU CANGSHAN ,  BOYD JOHN M ,  OWCZARZ ALEKSANDER

IPC: B24B21/06 ,  B24B21/04 ,  B24B37/24 ,  B24B37/26 ,  B24D11/02 ,  B24D11/06 ,  H01L21/304 ,  B24B37/04

CPC classification number: B24B37/245 ,  B24B21/04 ,  B24B37/26 ,  B24D11/02

Abstract: A belt (402) for polishing a workpiece such as a semiconductor wafer in a linear chemical mechanical polishing system includes a fixed abrasive material (401) attached to a polymeric layer (405) forming an endless loop. The belt is made without any reinforcing or supporting layers or supporting components or , in the alternative, with a soft, highly porous sublayer (407), allowing the belt to bend readily around the rollers (104, 106) of the linear polishing belt. Between the fixed abrasive material (401) and the polymeric support layer, an attachment material (403) is present. The bottom side of the polymeric sublayer can be attached to a stainless steel layer (409).

Abstract translation: 用于在线性化学机械抛光系统中抛光诸如半导体晶片的工件的带（402）包括附接到形成无限循环的聚合物层（405）的固定研磨材料（401）。 带子没有任何加强或支撑层或支撑部件，或者替代地，用软的，高度多孔的子层（407）制成，允许带绕线性抛光带的辊（104,106）容易地弯曲。 在固定研磨材料（401）和聚合物支撑层之间，存在附着材料（403）。 聚合物层的底侧可以附着到不锈钢层（409）上。

公开(公告)号：WO03007348A3

公开(公告)日：2003-08-21

申请号：PCT/US0222106

申请日：2002-07-11

Applicant: LAM RES CORP ,  BOYD JOHN M ,  RAVKIN MIKE ,  MIKHAYLICH KATRINA A

Inventor： BOYD JOHN M ,  RAVKIN MIKE ,  MIKHAYLICH KATRINA A

IPC: H01L21/304 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

Abstract: A method and apparatus for controlling galvanic corrosion effects on a single-wafer cleaning system are provided. In one embodiment, a method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with applying a cleaning chemistry containing corrosion inhibitors to a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry , wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.

Abstract translation: 提供了一种用于控制对单晶片清洁系统的电偶腐蚀影响的方法和装置。 在一个实施例中，提供了一种用于最小化单晶片清洁系统中的电偶腐蚀效应的方法。 该方法通过将包含腐蚀抑制剂的清洁化学品施加到晶片的表面来启动。 然后，将晶片的表面暴露于清洁化学品一段时间。 接下来，刷新清洁化学品和晶片表面的界面处的浓度梯度。 然后，同时施加漂洗剂和干燥剂以除去清洁化学品，其中干燥剂在将腐蚀抑制剂的浓度稀释至不足以提供防腐蚀的水平之前将晶片的表面干燥。

公开(公告)号：WO2008027215A3

公开(公告)日：2008-11-13

申请号：PCT/US2007018254

申请日：2007-08-17

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN M ,  KOROLIK MIKHAIL ,  DORDI YEZDI ,  REDEKER FRITZ C

IPC: C23C16/00

CPC classification number: H01L21/67207 ,  C23C16/0227 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76868

Abstract: The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

Abstract translation: 这些实施例提供了集成设备和方法，其为铜互连执行衬底表面处理和膜沉积，具有改善的金属迁移性能和减少的空穴传播。 在一个示例性实施例中，提供了用于执行表面处理和膜沉积的腔室。 腔室包括用于基板表面处理的第一接近头，其配置成分配第一处理气体以处理用于基板表面处理的第一接近头下方的基板表面的一部分。 腔室还包括用于原子层沉积（ALD）的第一接近头，其被配置为顺序地分配第一反应物气体和第一吹扫气体以在用于ALD的第二接近头下面沉积第一ALD膜。