Chemical coating of microwell for electrochemical detection device
    12.
    发明授权
    Chemical coating of microwell for electrochemical detection device 有权
    微孔化学涂层电化学检测装置

    公开(公告)号:US09404887B2

    公开(公告)日:2016-08-02

    申请号:US14139647

    申请日:2013-12-23

    Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

    Abstract translation: 所描述的实施例可以提供一种制造化学检测装置的方法。 该方法可以包括在CMOS器件上形成微孔。 微孔可以包括底表面和侧壁。 该方法可以进一步包括施加第一化学物质以选择性地连接到微孔的底表面,在微孔的侧壁上形成金属氧化物层,以及施加第二化学物质以选择性地连接到微孔的侧壁。 第二种化学物质可能与第一种化学物质不具有亲和力。

    Methods and systems for point of use removal of sacrificial material

    公开(公告)号:US09852919B2

    公开(公告)日:2017-12-26

    申请号:US14676697

    申请日:2015-04-01

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Methods for manufacturing well structures for low-noise chemical sensors

    公开(公告)号:US09841398B2

    公开(公告)日:2017-12-12

    申请号:US13736566

    申请日:2013-01-08

    CPC classification number: G01N27/414 G01N27/4145 G01N27/4148

    Abstract: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

    System and method for forming microwells
    17.
    发明授权
    System and method for forming microwells 有权
    用于形成微孔的系统和方法

    公开(公告)号:US09476853B2

    公开(公告)日:2016-10-25

    申请号:US14566098

    申请日:2014-12-10

    Abstract: A method of forming a sensor component includes forming a first layer over a sensor pad of a sensor of a sensor array. The first layer includes a first inorganic material. The method further includes forming a second layer over the first layer. The second layer includes a polymeric material. The method also includes forming a third layer over the second layer, the third layer comprising a second inorganic material; patterning the third layer; and etching the second layer to define a well over the sensor pad of the sensor array.

    Abstract translation: 形成传感器部件的方法包括在传感器阵列的传感器的传感器焊盘上形成第一层。 第一层包括第一无机材料。 该方法还包括在第一层上形成第二层。 第二层包括聚合材料。 该方法还包括在第二层上形成第三层,第三层包括第二无机材料; 图案化第三层; 并蚀刻第二层以在传感器阵列的传感器焊盘上限定一个孔。

    Chemical sensors with consistent sensor surface areas
    18.
    发明授权
    Chemical sensors with consistent sensor surface areas 有权
    化学传感器具有一致的传感器表面积

    公开(公告)号:US09128044B2

    公开(公告)日:2015-09-08

    申请号:US14198382

    申请日:2014-03-05

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor. The material comprises a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extends a distance along a sidewall of the opening, the distance defined by a thickness of the first dielectric.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口。 该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮动栅极导体的上表面并且沿着开口的侧壁延伸一定距离,该距离由第一电介质的厚度限定。

    Chemical sensor with sidewall sensor surface
    19.
    发明授权
    Chemical sensor with sidewall sensor surface 有权
    具有侧壁传感器表面的化学传感器

    公开(公告)号:US09116117B2

    公开(公告)日:2015-08-25

    申请号:US14197710

    申请日:2014-03-05

    CPC classification number: G01N27/4145

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor. A material defines an opening overlying the floating gate conductor. The material comprises a conductive element having an inner surface defining a lower portion of a sidewall of the opening. A dielectric is on the conductive element and has an inner surface defining an upper portion of the sidewall.

    Abstract translation: 在一个实施例中,描述了化学传感器。 化学传感器包括具有浮栅导体的化学敏感场效应晶体管。 材料限定了覆盖浮栅导体的开口。 该材料包括具有限定开口的侧壁的下部的内表面的导电元件。 电介质位于导电元件上,并具有限定侧壁上部的内表面。

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