Methods and systems for point of use removal of sacrificial material
    3.
    发明授权
    Methods and systems for point of use removal of sacrificial material 有权
    使用方法和系统去除牺牲材料

    公开(公告)号:US09080968B2

    公开(公告)日:2015-07-14

    申请号:US13734696

    申请日:2013-01-04

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Abstract translation: 一种制造传感器的方法,所述方法包括形成化学敏感场效应晶体管阵列(chemFET),在阵列中的chemFET上沉积介电层,在电介质层上沉积保护层,蚀刻电介质层和 保护层以形成对应于chemFET的感测表面的空腔,以及去除保护层。 该方法还包括:将电介质层和保护层一起蚀刻以形成对应于chemFET的感测表面的空腔。 保护层是聚合物,光致抗蚀剂材料,贵金属,氧化铜和氧化锌中的至少一种。 使用氢氧化钠,有机溶剂,王水,碳酸铵,盐酸,乙酸和磷酸中的至少一种除去保护层。

    Chemical Coating of Microwell for Electrochemical Detection Device
    6.
    发明申请
    Chemical Coating of Microwell for Electrochemical Detection Device 有权
    电化学检测装置的微孔化学涂层

    公开(公告)号:US20130089466A1

    公开(公告)日:2013-04-11

    申请号:US13648663

    申请日:2012-10-10

    Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

    Abstract translation: 所描述的实施例可以提供一种制造化学检测装置的方法。 该方法可以包括在CMOS器件上形成微孔。 微孔可以包括底表面和侧壁。 该方法可以进一步包括施加第一化学物质以选择性地连接到微孔的底表面,在微孔的侧壁上形成金属氧化物层,以及施加第二化学物质以选择性地连接到微孔的侧壁。 第二种化学物质可能与第一种化学物质不具有亲和力。

    Chemical device with thin conductive element

    公开(公告)号:US10481124B2

    公开(公告)日:2019-11-19

    申请号:US15818718

    申请日:2017-11-20

    Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

    Methods for manufacturing well structures for low-noise chemical sensors

    公开(公告)号:US10436742B2

    公开(公告)日:2019-10-08

    申请号:US15826627

    申请日:2017-11-29

    Abstract: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT
    10.
    发明申请

    公开(公告)号:US20180180572A1

    公开(公告)日:2018-06-28

    申请号:US15818718

    申请日:2017-11-20

    Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

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