-
公开(公告)号:ITTO910137D0
公开(公告)日:1991-02-27
申请号:ITTO910137
申请日:1991-02-27
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: POLETTO VANNI , MORELLI MARCO , MURARI BRUNO
Abstract: A voltage regulator (30) comprising a first power switch (16) connected between the input terminal (11) and output terminal (13); a storage condenser (21) connected to the input terminal via a one-way switch (18); a second power switch (19) connected between the condenser and the input terminal; and a regulating element (17) connected to the output terminal and driving the power switches (16, 19) in such a manner as to maintain the output voltage (Vo) constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device (31) is provided between the regulating element (17) and the switches (16, 19), for detecting the input voltage (VA) and the voltage of the condenser (VA'), and keeping both switches on as long as the input voltage is above two given thresholds (VTH1, VTH2), turning off the second switch (19) when the input voltage is higher than the condenser voltage (VA > VA') and below the first threshold (VA
-
公开(公告)号:IT1225609B
公开(公告)日:1990-11-22
申请号:IT8364988
申请日:1988-07-20
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: MARCHIO' FABIO , MORELLI MARCO , TRICOLI FRANCESCO
IPC: H01L27/06 , H01L21/8222 , H02P8/12 , H03K17/0814 , H03K17/16 , H03K17/64 , H02P
Abstract: A circuit for recirculating the discharge current of an inductive load (L) driven from the high side of the supply at two different recirculation voltages which may be selected for implementing a slow or a fast recirculation of the current advantageously employs a single power element represented by an NPN transistor (Tr) functionally connected in parallel to the load. During a driving phase of the load a slow recirculation of the discharge current is implemented by delivering to the base of the recirculation NPN transistor a current (I) sufficient to keep it saturated. Upon switching off the load, when a fast recirculation of the discharge current through the recirculation NPN transistor (Tr) is desired, delivery of the saturating current to the base of the recirculation transistor is interrupted and the transistor remains conducting having a diode (D1) and a zener diode (Dz1) in opposition thereto connected in series between ground and the base of the recirculation NPN transistor (Tr) for permitting the recirculation at a voltage substantially equal to the sum of the voltage drop through the first diode (D1), the zener voltage and the base-emitter voltage of the recirculation NPN transistor (Tr).
-
公开(公告)号:DE69226746D1
公开(公告)日:1998-10-01
申请号:DE69226746
申请日:1992-09-14
Applicant: SGS THOMSON MICROELECTRONICS , MAGNETI MARELLI SPA
Inventor: POLETTO VANNI , MORELLI MARCO , POMA ALBERTO
Abstract: The circuit includes two output terminals (OUT1, OUT2) for connection to the terminals of a load (L), first and second pairs of electronic power switches (Q1, Q4; Q2, Q3) which are connected between the output terminals (OUT1, OUT2) and the two poles of a direct-current voltage supply (Vs) so as to form an H-shaped structure with the load (L), and a driver circuit (C1, C2) for selectively making the electronic power switches of the first pair (Q1, Q4) of the second pair (Q2, Q3) order to cause a current to flow through the load (L) in one direction or the other respectively, and for preventing the electronic switches (Q1, Q3; Q2, Q4) which are connected between the same output terminal (OUT1; OUT2) and the two poles of the voltage supply (Vs) from conducting simultaneously.
-
公开(公告)号:DE69223775T2
公开(公告)日:1998-04-30
申请号:DE69223775
申请日:1992-06-16
Applicant: SGS THOMSON MICROELECTRONICS , MAGNETI MARELLI SPA
Inventor: POMA ALBERTO , POLETTO VANNI , MORELLI MARCO
IPC: H01L27/06 , H03F1/52 , H03K17/06 , H03K17/082 , H03K17/08
-
公开(公告)号:DE69219975T2
公开(公告)日:1997-10-16
申请号:DE69219975
申请日:1992-09-17
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: PELLEGRINI FRANCO , MORELLI MARCO , CANCLINI ATHOS
IPC: H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/78 , H03K17/08 , H03K19/003
Abstract: In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.
-
公开(公告)号:DE69210651T2
公开(公告)日:1997-01-16
申请号:DE69210651
申请日:1992-02-25
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: POLETTO VANNI , MORELLI MARCO , MURARI BRUNO
Abstract: A voltage regulator (30) comprising a first power switch (16) connected between the input terminal (11) and output terminal (13); a storage condenser (21) connected to the input terminal via a one-way switch (18); a second power switch (19) connected between the condenser and the input terminal; and a regulating element (17) connected to the output terminal and driving the power switches (16, 19) in such a manner as to maintain the output voltage (Vo) constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device (31) is provided between the regulating element (17) and the switches (16, 19), for detecting the input voltage (VA) and the voltage of the condenser (VA'), and keeping both switches on as long as the input voltage is above two given thresholds (VTH1, VTH2), turning off the second switch (19) when the input voltage is higher than the condenser voltage (VA > VA') and below the first threshold (VA
-
公开(公告)号:DE69210133D1
公开(公告)日:1996-05-30
申请号:DE69210133
申请日:1992-07-21
Applicant: SGS THOMSON MICROELECTRONICS , MAGNETI MARELLI SPA
Inventor: MAZZUCCO MICHELANGELO , POLETTO VANNI , MORELLI MARCO
IPC: G01N27/409 , H03F1/08 , H03F3/34 , H03F3/347 , H03F3/45
-
公开(公告)号:IT1250301B
公开(公告)日:1995-04-07
申请号:ITTO910688
申请日:1991-09-09
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: POLETTO VANNI , MORELLI MARCO
-
公开(公告)号:DE69009302D1
公开(公告)日:1994-07-07
申请号:DE69009302
申请日:1990-06-08
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: MORELLI MARCO , CAVALLI BRUNO , MARCHIO FABIO
Abstract: The device for protection comprises a zener diode voltage limiter (1) having a breakdown voltage pre-set at a value (say, 30 volts) lower than the maximum value sustainable by the protected circuit (30) in the closed condition and a quenching circuit (20) having a pre-set lag controlled by each overvoltage impulse and suitable for disactivating said voltage limiter (1) and to control the opening of said protected circuit (30) with a time lag pre-set with respect to the start of each overvoltage impulse. In succession to said voltage limiter (1) there is introduced in addition a zener diode (10) with a higher breakdown voltage, say, equal to 110 volts, which allows the limitation to such a value of any overvoltages having a very low energy content superimposed over overvoltages having limited amplitude and long duration.
-
公开(公告)号:ITTO910137A1
公开(公告)日:1992-08-28
申请号:ITTO910137
申请日:1991-02-27
Applicant: SGS THOMSON MICROELECTRONICS
Inventor: MORELLI MARCO , MURARI BRUNO , POLETTO VANNI
IPC: G05F1/56 , G05F20060101 , G05F1/569 , G05F1/59 , H02J9/06
-
-
-
-
-
-
-
-
-