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公开(公告)号：DE4009675A1
公开(公告)日：1990-10-04
申请号：DE4009675
申请日：1990-03-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SUZUMURA MASAHIKO , KATOAKA KAZUSHI , KOMODA TAKUYA
IPC: H01L21/335 , H01L29/739
Abstract: A method for manufacturing a static induction type semiconductor device is to form gate zones (13) on a surface side of a semiconductor substrate (11), to cover the surface including the gate zones with an oxide film, to form through the oxide film apertures (15) for providing cathode zones (16) in the substrate, the apertures respectively overlapping partly each gate zone (13), and to form the cathode zones (16) with thermal diffusion of an impurity carried out through the apertures, the cathode zones (16) thus partly overlapping the gate zones (13). Concentration of the impurity as well as the depth of the diffusion at the thus made impurity diffusion zones can be thereby stabilized, and eventually the electric characteristics of the enhancement type, static induction type semiconductor device can be sufficiently made stable.
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公开(公告)号：AU2676488A
公开(公告)日：1989-08-03
申请号：AU2676488
申请日：1988-12-09
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： TOMII KAZUSHI , ABE TOSHIROH , KOMODA TAKUYA
Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.
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公开(公告)号：DE69934958T2
公开(公告)日：2007-10-25
申请号：DE69934958
申请日：1999-11-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , HONDA YOSHIAKI , AIZAWA KOICHI , WATABE YOSHIFUMI , ICHIHARA TSUTOMU , KONDO YUKIHIRO , KOSHIDA NOBUYOSHI
Abstract: A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
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公开(公告)号：ES2281158T3
公开(公告)日：2007-09-16
申请号：ES99122729
申请日：1999-11-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , HONDA YOSHIAKI , AIZAWA KOICHI , WATABE YOSHIFUMI , ICHIHARA TSUTOMU
Abstract: Se provee de una fuente de electrones de tipo emisión de campo 10 con un substrato de silicio de tipo n 1, una capa de fuerte deriva de campo 6 formada directamente sobre el substrato de silicio de tipo n 1, o introduciendo una capa de silicio policristalina 3 entre medias, y una película delgada conductora de la electricidad 7, que es una película delgada de oro, formada en la capa de fuerte deriva de campo 6. Además, se dispone de un electrodo óhmico 2 en la superficie trasera del substrato de silicio tipo n 1. Enseguida, los electrones, que se inyectan desde el substrato de silicio de tipo n 1, en la capa de fuerte deriva de campo 6, derivan en la capa de fuerte deriva de campo 6 hacia la superficie de la capa, y después pasan a través de la película delgada eléctricamente conductora 7 para ser emitidos hacia fuera. La capa de fuerte deriva de campo 6 se forma haciendo poroso el silicio policristalino 3 formado sobre el substrato de silicio de tipo n 1 por medio de una oxidación anódicay una posterior oxidación usando ácido nítrico diluido o similares.
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公开(公告)号：DK1003195T3
公开(公告)日：2007-05-21
申请号：DK99122729
申请日：1999-11-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , KOMODA TAKUYA , WATABE YOSHIFUMI , KOSHIDA NOBUYOSHI , HONDA YOSHIAKI , AIZAWA KOICHI , ICHIHARA TSUTOMU , KONDO YUKIHIRO
Abstract: A field emission type electron source 10 is provided with an n-type silicon substrate 1, a strong field drift layer 6 formed on the n-type silicon substrate 1 directly or inserting a polycrystalline silicon layer 3 therebetween, and an electrically conductive thin film 7, which is a thin gold film, formed on the strong field drift layer 6. Further, an ohmic electrode 2 is provided on the back surface of the n-type silicon substrate 1. Hereupon, electrons, which are injected from the n-type silicon substrate 1 into the strong field drift layer 6, drift in the strong field drift layer 6 toward the surface of the layer, and then pass through the electrically conductive thin film 7 to be emitted outward. The strong field drift layer 6 is formed by making the polycrystalline silicon 3 formed on the n-type silicon substrate 1 porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.
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Patent Agency Ranking
公开(公告)号：ES2213320T3
公开(公告)日：2004-08-16
申请号：ES99118925
申请日：1999-09-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , ICHIHARA TSUTOMU , AIZAWA KOICHI , KOSHIDA NOBUYOSHI
Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.
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公开(公告)号：AU2003292557A8
公开(公告)日：2004-07-29
申请号：AU2003292557
申请日：2003-12-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HONDA YOSHIAKI , KOMODA TAKUYA , BABA TORU , AIZAWA KOICHI , ICHIHARA TSUTOMU
Abstract: A field emission-type electron source has a plurality of electron source elements ( 10 a) formed on the side of one surface (front surface) of an insulative substrate ( 11 ) composed of a glass substrate. Each of electron source elements ( 10 a) includes a lower electrode ( 12 ), a buffer layer ( 14 ) composed of an amorphous silicon layer formed on the lower electrode ( 12 ), a polycrystalline silicon layer ( 3 ) formed on the buffer layer ( 14 ), a strong-field drift layer ( 6 ) formed on the polycrystalline silicon layer ( 3 ), and a surface electrode ( 7 ) formed on the strong-field drift layer ( 6 ). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
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公开(公告)号：AU2003235288A1
公开(公告)日：2003-11-11
申请号：AU2003235288
申请日：2003-05-14
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： WATABE YOSHIFUMI , AIZAWA KOICHI , KOMODA TAKUYA , HATAI TAKASHI , HONDA YOSHIAKI
IPC: C25D11/32 , C25D21/12 , H01J9/02 , H01L21/316 , H01J1/312
Abstract: Disclosed is a method for the electrochemical oxidation of a semiconductor layer. In an electrochemical oxidation treatment for the production process of an electron source 10 (field-emission type electron source) as one of electronic devices, a control section 37 determines a voltage increment due to the resistance of an electrolytic solution B in advance, based on a detected voltage from a resistance detect section 35. Then, the control section 37 controls a current source to supply a constant current so as to initiate an oxidation treatment for a semiconductor layer formed on an object 30. The control section 37 corrects a detected voltage from a voltage detect section 36 by subtracting the voltage increment therefrom. When the corrected voltage reaches a given upper voltage value, the control section 37 is operable to discontinue the output of the current source 32 and terminate the oxidation treatment. The present invention allows electronic devices to be produced with reduced variation in the characteristics thereof.
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公开(公告)号：GB2230136B
公开(公告)日：1993-02-10
申请号：GB9005988
申请日：1990-03-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SUZUMURA MASAHIKO , KATAOKA KAZUSHI , KOMODA TAKUYA
IPC: H01L21/335 , H01L29/739
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公开(公告)号：GB2230136A
公开(公告)日：1990-10-10
申请号：GB9005988
申请日：1990-03-16
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SUZUMURA MASAHIKO , KATAOKA KAZUSHI , KOMODA TAKUYA
IPC: H01L21/335 , H01L29/739
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