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1.发明申请METHOD AND APPARATUS FOR MODIFYING OBJECT WITH ELECTRONS GENERATED FROM COLD CATHODE ELECTRON EMITTER 审中-公开用于从冷阴极电子发射器产生的电子修改对象的方法和装置
公开(公告)号：WO2005052978A2
公开(公告)日：2005-06-09
申请号：PCT/JP2004017969
申请日：2004-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD , AIZAWA KOICHI , ICHIHARA TSUTOMU , KOMODA TAKUYA , IKEDA JYUNJI , BABA TORU
Inventor： AIZAWA KOICHI , ICHIHARA TSUTOMU , KOMODA TAKUYA , IKEDA JYUNJI , BABA TORU
Abstract: Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes. It is preferred that an energy of the emitted electrons is selected from a range of 1 eV to 50 keV, and preferably 1 eV to 100 eV.
Abstract translation: 提供了用电子修饰物体的装置和方法，通过该装置和方法，即使具有相对较宽的待处理表面积，物体也可以在基本上等于大气压的压力下用电子均匀有效地修改。 该方法使用具有根据隧道效应从平面电子发射部发射电子的能力的冷阴极电子发射体，并且优选地包括一对电极，以及包括设置在电极之间的纳米晶硅的强场漂移层。 该物体通过在电极之间施加电压而暴露于从平面电子发射部分发射的电子。 发射电子的能量优选从1eV至50keV，优选1eV至100eV的范围内选择。
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公开(公告)号：WO2004061891A3
公开(公告)日：2005-01-20
申请号：PCT/JP0316860
申请日：2003-12-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD , ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , BABA TORU
Inventor： ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , BABA TORU
CPC classification number: H01J1/3042 , H01J31/123
Abstract: A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
Abstract translation: 场致发射型电子源具有形成在由玻璃基板构成的绝缘基板（11）的一个表面（前表面）侧的多个电子源元件（10a）。 每个电子源元件（10a）包括下电极（12），由形成在下电极（12）上的非晶硅层构成的缓冲层（14），形成在缓冲层（12）上的多晶硅层（3） 14），形成在多晶硅层（3）上的强场漂移层（6）和形成在强场漂移层（6）上的表面电极（7）。 场致发射型电子源可以实现电子发射特性的平滑变化。
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公开(公告)号：AT409951T
公开(公告)日：2008-10-15
申请号：AT02027754
申请日：2002-12-11
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , HATAI TAKASHI , ICHIHARA TSUTOMU , HONDA YOSHLAKI , WATABE YOSHIFUMI , BABA TORU
IPC: H01J1/312
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公开(公告)号：DE60229105D1
公开(公告)日：2008-11-13
申请号：DE60229105
申请日：2002-12-11
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , TAKEGAWA YOSHIYUKI , AIZAWA KOICHI , HATAI TAKASHI , ICHIHARA TSUTOMU , HONDA YOSHLAKI , WATABE YOSHIFUMI , BABA TORU
IPC: H01J1/312
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公开(公告)号：AU2003292557A1
公开(公告)日：2004-07-29
申请号：AU2003292557
申请日：2003-12-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ICHIHARA TSUTOMU , KOMODA TAKUYA , AIZAWA KOICHI , HONDA YOSHIAKI , BABA TORU
Abstract: A field emission-type electron source has a plurality of electron source elements ( 10 a) formed on the side of one surface (front surface) of an insulative substrate ( 11 ) composed of a glass substrate. Each of electron source elements ( 10 a) includes a lower electrode ( 12 ), a buffer layer ( 14 ) composed of an amorphous silicon layer formed on the lower electrode ( 12 ), a polycrystalline silicon layer ( 3 ) formed on the buffer layer ( 14 ), a strong-field drift layer ( 6 ) formed on the polycrystalline silicon layer ( 3 ), and a surface electrode ( 7 ) formed on the strong-field drift layer ( 6 ). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
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Patent Agency Ranking
公开(公告)号：AU2003292557A8
公开(公告)日：2004-07-29
申请号：AU2003292557
申请日：2003-12-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HONDA YOSHIAKI , KOMODA TAKUYA , BABA TORU , AIZAWA KOICHI , ICHIHARA TSUTOMU
Abstract: A field emission-type electron source has a plurality of electron source elements ( 10 a) formed on the side of one surface (front surface) of an insulative substrate ( 11 ) composed of a glass substrate. Each of electron source elements ( 10 a) includes a lower electrode ( 12 ), a buffer layer ( 14 ) composed of an amorphous silicon layer formed on the lower electrode ( 12 ), a polycrystalline silicon layer ( 3 ) formed on the buffer layer ( 14 ), a strong-field drift layer ( 6 ) formed on the polycrystalline silicon layer ( 3 ), and a surface electrode ( 7 ) formed on the strong-field drift layer ( 6 ). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
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公开(公告)号：EP1329926A4
公开(公告)日：2004-02-25
申请号：EP01976835
申请日：2001-10-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KOMODA TAKUYA , HONDA YOSHIAKI , AIZAWA KOICHI , ICHIHARA TSUTOMU , WATABE YOSHIFUMI , HATAI TAKASHI , BABA TORU
CPC classification number: B82Y10/00 , H01J1/312 , H01J2329/00
Abstract: A field emission type electron source (10) is provided with a lower electrode (8) comprising a conductive layer, a high-field drift layer (6) including a drift part (6a) comprising oxidized or nitride porous semiconductor, and a surface electrode (7) comprising an Au thin film on a glass insulation substrate (11). A voltage is impressed so that the surface electrode (7) may be positive to the lower electrode (8), and electrons injected from the lower electrode (8) into the high-field drift layer (6) drift this layer (6) and are emitted outside through the surface electrode (7). A pn-junction semiconductor layer consisting of an n-layer (21) and a p-layer (22) is provided between the lower electrode (8) and the high-field drift layer (6). Thus, a leakage current is prevented from flowing from the lower electrode (8) to the surface electrode (7), and a power consumption is reduced.
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公开(公告)号：JP2008185374A
公开(公告)日：2008-08-14
申请号：JP2007017201
申请日：2007-01-26
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： SHIROISHI HISATOKU , KATAOKA KAZUSHI , SAIJO TAKASHI , OKUTO TAKASHI , BABA TORU , TAURA TAKUMI
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a sensor device, having high reliability even if its miniaturization or height lowering is realized.
SOLUTION: This method has a process A for manufacturing a cover substrate 1; a process B for bonding the cover substrate 1 to a through hole wiring formation substrate 11 in the further depressurized state than an atmospheric pressure, storing a sensor element 3 in a recessed part airtightly, and manufacturing the sensor device 100A; and a process C for deforming the cover substrate 1 so that a recessed part inner bottom surface approaches the sensor element 3, by arranging the sensor device 100A in the air. In the process A, the recessed part is formed with the inner bottom surface being separated from the sensor element 3, as going toward the center.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供一种传感器装置的制造方法，即使实现其小型化或高度降低也具有高可靠性。 解决方案：该方法具有用于制造覆盖基板1的工艺A; 用于将盖基板1与通气布线形成基板11进一步压缩状态比大气压接合的工序B，将传感器元件3密封地保持在凹部内，制造传感器装置100A; 以及通过将传感器装置100A布置在空气中，使盖基板1变形从而凹部内底面接近传感器元件3的工序C。 在处理A中，凹部形成为内侧底面与传感器元件3分离，朝向中心。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2008008673A
公开(公告)日：2008-01-17
申请号：JP2006177060
申请日：2006-06-27
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： SHIROISHI HISATOKU , KATAOKA KAZUSHI , SAIJO TAKASHI , OKUTO TAKASHI , KAMAKURA MASANAO , BABA TORU , TAURA TAKUMI , TOMOIDA AKIRA
Abstract: PROBLEM TO BE SOLVED: To provide an acceleration sensor capable of easily recognizing operation in each of a plurality of directions where the acceleration can be detected.
SOLUTION: The acceleration sensor comprises a sensor substrate 1 that has gauge resistors Rx1-Rx4, Ry1-Ry4 and Rz1-Rz4 disposed in a movable section formed of a weight section 12 and four bending sections 13 and can detect accelerations in three directions, a first cover substrate 2 joined to one surface side of the sensor substrate 1, and a second cover substrate 3 joined to the other surface side of the sensor substrate 1. A package is constituted by the cover substrates 2 and 3 and a frame section 11 of the sensor substrate 1. The acceleration sensor has, as a driving means for operation recognition for forcibly moving the movable section with an electromagnetic force, a plurality of pairs of excitation sections 26 formed of coils and disposed on the first cover substrate 2 and magnetic coupling sections 15 that are disposed in the weight section 12 and can magnetically couple to the excitation sections 26, and can generate the electromagnetic force for operation recognition independently every pair of excitation section 26 and magnetic coupling section 15.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供能够容易地识别可以检测加速度的多个方向中的每一个方向上的操作的加速度传感器。 解决方案：加速度传感器包括传感器基板1，该传感器基板1设置在由重量部分12和四个弯曲部分13形成的可移动部分中的测量电阻器Rx1-Rx4，Ry1-Ry4和Rz1-Rz4，并且可以检测三个加速度部分 连接到传感器基板1的一个表面侧的第一覆盖基板2和与传感器基板1的另一个表面侧接合的第二盖基板3.封装由盖基板2和3以及框架 传感器基板1的部分11.加速度传感器具有作为用于以电磁力强制地移动可动部分的操作识别的驱动装置，由线圈形成并设置在第一盖基板2上的多对激励部分26 和磁耦合部分15，它们设置在配重部分12中并且可以磁耦合到激励部分26，并且可以产生用于操作识别的电磁力 倾向于每对激励部分26和磁耦合部分15.版权所有：（C）2008，JPO＆INPIT
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公开(公告)号：JP2007266317A
公开(公告)日：2007-10-11
申请号：JP2006089582
申请日：2006-03-28
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： OKUTO TAKASHI , KATAOKA KAZUSHI , SAIJO TAKASHI , BABA TORU , GOTO KOJI , MIYAJIMA HISAKAZU
Abstract: PROBLEM TO BE SOLVED: To provide a sensor device capable of improving the manufacturing yield of the sensor device manufactured by using at least a sensor substrate, where a sensor and an IC cooperating with the sensor are formed at the side of the main surface of a semiconductor substrate, and a substrate for packages where a plurality of through-hole wires connected to the sensor electrically are formed; and to provide a manufacturing method of the sensor device. SOLUTION: A metal layer 18 for sealing and a metal layer 19 for electrical connection are formed on a surface insulating film 16 by etching back a part formed at a region E3 for junction in a multilayer insulating film, comprising a surface insulating film 16 and a multilayer structure section 41 formed at the side of the main surface of an SOI semiconductor substrate 10. A weight 12, a deflector 13, and the like of a sensor E1 are formed, the sensor substrate 1 is joined to a second substrate 3 for packages at normal temperatures, and the metal layers 18, 28 for sealing of the sensor substrate 1 and the first substrate 2 for packages, and the metal layers 19, 29 for electrical connection are joined directly. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种能够提高使用至少传感器基板制造的传感器装置的制造成品率的传感器装置，其中与传感器协作的传感器和IC形成在主体侧 半导体基板的表面，以及形成有与传感器电连接的多个通孔线的封装用基板。 并提供传感器装置的制造方法。 解决方案：用于密封的金属层18和用于电连接的金属层19通过在多层绝缘膜中的用于结的区域E3形成的部分进行回蚀而形成在表面绝缘膜16上，该部分包括表面绝缘膜 16和形成在SOI半导体基板10的主表面侧的多层结构部分41.形成传感器E1的重物12，偏转器13等，传感器基板1与第二基板 并且用于密封传感器基板1的金属层18,28和用于封装的第一基板2以及用于电连接的金属层19,29被直接接合。 版权所有（C）2008，JPO＆INPIT
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