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公开(公告)号：JPH1151793A
公开(公告)日：1999-02-26
申请号：JP20618497
申请日：1997-07-31
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , HATAI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a thin-film element whose gage factor is high, whose resistivity is high and whose heat resistance is excellent and to provide its manufacturing method. SOLUTION: A silicon oxide film 2 is formed on a metal substrate 7 by a plasma CVD method. A thin-film strain gage 3 which contains Cr, oxygen and nitrogen, whose oxygen content is at 40 to 50 atomic % and whose nitrogen content is at 6 to 10 atomic % is formed on the silicon oxide film 2 by a magnetron sputtering method. An electrode interconnection 4 which is composed of aluminum (Al) is formed in the terminal part of the thin-film strain gage 3. Then, a silicon oxide film 5 is formed, by a plasma CVD method, on the side of a face on which the electrode interconnection 4 is formed at the metal substrate 1. A contact hole 6 is formed, by an etching operation, in the silicon oxide film 5 on the electrode interconnection 4.
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公开(公告)号：JPH1019703A
公开(公告)日：1998-01-23
申请号：JP16903496
申请日：1996-06-28
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , HATAI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a thin-film strain gauge and its manufacturing method by which temperature compensation can be realized easily, by allowing a thin film to be formed mainly of metallic chromium. SOLUTION: This device is provided with a substrate 1 having a flexibility on which an insulation film 11 is formed on one surface and a thin-film chromium thin film 2 having a constant value of gauge rate that is defined according to the change in resistance to specified strain, of which resistance varies against a strain caused by external force and which is formed mainly of metallic chromium and is formed on one surface side of the substrate 1 with the insulation film 11 in between, and it measures an external force based on the change in resistance of the film 2. In such a thin-film strain gauge, respective temperature coefficients of the resistance and gauge rate in the film 2 are reverse to each other in sign and their absolute values are approximately equal to each other.
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公开(公告)号：JPH09318477A
公开(公告)日：1997-12-12
申请号：JP13455696
申请日：1996-05-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： HATAI TAKASHI , SAKAI ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a pressure sensor capable of measuring high pressure and being easily manufactured and its manufacturing method. SOLUTION: After a lower electrode 3a is formed on a stainless metal substrate 1 via an insulating coat 2, a sacrifice layer 5 is formed and patterned into a predetermined form. And an upper electrode 3b is formed at a location approximately opposed to the lower electrode 3a. Then after the upper electrode 3b is protected by a protective coat 4, the sacrifice layer 5 is removed by etching. At this time, an air gap is formed between the lower electrode 3a and the upper electrode 3b by the removal of the sacrifice layer 5, and a capacitor is also formed because of the opposed arrangements. In addition, the upper electrode 3b is supported by the protective coat 4.
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公开(公告)号：JPH0992845A
公开(公告)日：1997-04-04
申请号：JP24811295
申请日：1995-09-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , HATAI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can be produced at a low manufacturing cost and in simple processes and which constitutes a high- sensitivity flow sensor. SOLUTION: A recess 10 is provided in the lower side of a silicon oxide film 2 on a silicon substrate 1 as a supporting substrate, and a diaphragm portion 2a made of the silicon oxide film 2 is formed. A heater 8 and a thermistor 9 are formed on the upper side of the diaphragm portion 2a, and a standard resistor is formed on the silicon oxide film 2 except for the area of the diaphragm portion 2a. A flow sensor element is formed by serially connecting the thermistor 9 and the standard resistor 10 by a second electrode layer 7. The heater 8 is formed by sequentially stacking a first electrode layer 3, a p-type silicon thin film 4a of low resistance including a crystal layer, and an n-type silicon thin film 5a of high resistance including a crystal layer. The thermistor 9 is formed by sequentially stacking a p-type silicon thin film 4b of low resistance including a crystal layer, an n-type silicon thin film 5b of high resistance including a crystal layer, and the second electrode layer 7.
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公开(公告)号：JPH08329730A
公开(公告)日：1996-12-13
申请号：JP13322595
申请日：1995-05-31
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ICHIHARA TSUTOMU , KUSANAGI SHIGEKAZU , SAKAI ATSUSHI , AIZAWA KOICHI
IPC: F21V23/00 , F21V23/04 , F21W131/40 , H05B37/02
Abstract: PURPOSE: To control optimal illumination according to a position of a human body by an illumination control system. CONSTITUTION: In a lighting system where detecting parts 5a and 5b are provided to detect a human body in a prescribed detecting area, and the sizes of detecting areas A and B of the respective detecting parts 5a and 5b are different from each other, and these detecting areas A and B are set to overlap in an almost coaxial shape, and two-stage light dimming is performed by discriminating the distance from a body by the number of detecting parts detecting the body an illumination control system is constituted. Therefore, optimal illumination according to a position of the human body can be controlled, and energy- saving and reduction in construction work can be attained.
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Patent Agency Ranking
公开(公告)号：JPH07234159A
公开(公告)日：1995-09-05
申请号：JP2505194
申请日：1994-02-23
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ISHIDA TAKUO , SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI
Abstract: PURPOSE:To easily discriminate an infrared detection element of good quality. CONSTITUTION:In a method for producing an infrared detection element by connecting a plurality of infrared detection parts A on a substrate to form a bridge circuit C and providing electrode terminals 8, 10, at least one of the wirings 9 connecting the infrared detection parts A is formed from the same material as the electrode terminals 8, 10 to form the bridge circuit C on the substrate.
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公开(公告)号：JPH07128150A
公开(公告)日：1995-05-19
申请号：JP27277193
申请日：1993-10-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： ISHIDA TAKUO , SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI , KAKINOTE KEIJI
Abstract: PURPOSE:To manufacture an infrared detector in which resistance values of detector elements are uniform and whose accuracy is high by a method wherein an upper electrode is worked and the opposite area between the upper electrode and a lower electrode is changed to a direction in which an irregularity between the detection parts is eliminated. CONSTITUTION:An insulating film 12 which is composed of silicon nitride or the like is formed on one face of a silicon substrate 11, and a thin film which is composed of silicon nitride is formed on its opposite face. A chromium layer is etched on the film 12, a lower electrode 15 is formed, an amorphous silicon layer is etched on it, and a thin-film resistor 14 is formed. In addition, an upper electrode 15 is formed of chromium on the resistor 14. Then, a silicon oxide layer is etched on the resistor 14 and the electrode 15, an infrared absorption layer 17 is formed, an aluminum layer is etched on the electrode 15, and electrode terminals 16 are formed. At this time, in a detector in which an irregularity in resistance values of four elements (a) which form a bridge circuit is at + or -2% or higher after the resistance values of the detector elements (a) have been measured, a part of the upper electrode film is cut by a laser, the opposite area between the upper and lower electrodes is adjusted, the irregularity is eliminated, and the respective resistance values are made uniform.
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公开(公告)号：JPH07128141A
公开(公告)日：1995-05-19
申请号：JP27233093
申请日：1993-10-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AIZAWA KOICHI , KUNUGIHARA TSUTOMU , TOMONARI SHIGEAKI , SAKAI ATSUSHI , NAKAMURA TAKURO , KAKINOTE KEIJI
Abstract: PURPOSE:To provide a low-noise infrared detector. CONSTITUTION:In an infrared detector, at least one detector element 8 which is provided with a thin-film infrared detection layer 1, with low-resistance layers 4, 5 which are formed at the upper part and the lower part of the thin-film infrared detection layer 1 and with a lower electrode 2 and an upper electrode 3 which are formed so as to be a pair at the upper part and the lower part of the low-resistance layers 4, 5 is formed. In the infrared detector, the peripheral part of the low-resistance layer 5 is removed. Since a leakage current which is generated at the edge of the element 8 due to foreign particles which adhere to the element 8 can be reduced, a noise can be reduced.
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公开(公告)号：JPH07120308A
公开(公告)日：1995-05-12
申请号：JP26864593
申请日：1993-10-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YOSHIDA HITOSHI , SAKAI ATSUSHI , MATSUSHIMA CHOMEI
IPC: G01J1/02 , G01J5/20 , H01L21/302 , H01L21/3065
Abstract: PURPOSE:To achieve a higher integration and shorten the production time. CONSTITUTION:It is so arranged to include a superthin film wafer 13 2-10mum thick having a hollow part 13a, a heat insulating film 14 which covers the hollow part 13a and the perimeter thereof is supported on the superthin film wafer 13, a thermistor 15 formed on the heat insulating film 14, a lower electrode 16 and an upper electrode 17 connected to the thermistor 15, an infrared absorption film 20 formed in the upper part of the thermistor 15 and sealing gas 27 of a low heat conductivity. This enables the hollow part 13a to be worked by dry etching by RIE thereby achieving a higher level of integration.
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公开(公告)号：JPH07120307A
公开(公告)日：1995-05-12
申请号：JP26685093
申请日：1993-10-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , SAKAI ATSUSHI , AIZAWA KOICHI , ISHIDA TAKUO , NAKAMURA TAKURO
Abstract: PURPOSE:To achieve reduction of the cost and the number of processes by forming a filter layer on an infrared absorption film using a semiconductor process. CONSTITUTION:This device is made up of a substrate 1 having a hollow part 1a, a heat insulating film 2 which covers the hollow part 1a and the perimeter thereof is supported on the substrate 1 and an infrared detection part 7 provided on the heat insulating film 2. The infrared detection part 7 is provided with a filter layer 13 having desired infrared transmitting characteristic at an upper part of an infrared absorption film 6 in an infrared detector including a thermistor 5, a pair of electrodes (lower electrode 3 and upper electrode 4) connected to the thermistor 5 and the infrared absorption film 6.
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