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    ELECTROSTATIC RELAY
    1.
    发明专利
    ELECTROSTATIC RELAY 未知

    公开(公告)号：CA2072199C

    公开(公告)日：1997-11-11

    申请号：CA2072199

    申请日：1992-06-23

    Applicant: PERINO DIDER ,  LEWINER JACQUES ,  MATSUSHITA ELECTRIC WORKS LTD

    Inventor： SAKAI JUN ,  AIZAWA KOICHI ,  NISHIMURA HIROMI ,  AWAI TAKAYOSHI ,  KASANO FUMIHIRO ,  KAKITE KEIJI

    IPC: H01H1/00 ,  H01H1/20 ,  H01H59/00

    Abstract: An electrostatic relay essentially comprises a fixed electrode with a fixed contact insulated therefrom, a movable electrode plate with a movable contact insulated therefrom, and a fixed pair of oppositely charged electrets. The movable electrode plate is pivotally supported to a pivot so as to have a cantilever fashion or a seesaw fashion, and also to move about the pivot axis relative to the fixed electrode between two rest positions of closing and opening the contacts. A control voltage source is connected across the fixed electrode and the movable electrode plate to generate a potential difference therebetween. The electrets are disposed adjacent the movable electrode plate to generate electrostatic forces of attracting and repelling the movable electrode plate, respectively when the movable electrode plate is charged to a given polarity. That is, the attracting and repelling forces are cooperative to produce a torque for moving the movable electrode plates in one direction from one of the rest positions to the other. The electrostatic relay is useful for precisely and rapidly operating of the relay.

    HEAT INSULATION FILM FOR DIAPHRAGM STRUCTURE AND MANUFACTURE THEREOF
    9.
    发明专利
    HEAT INSULATION FILM FOR DIAPHRAGM STRUCTURE AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH06132277A

    公开(公告)日：1994-05-13

    申请号：JP28450692

    申请日：1992-10-22

    Applicant: MATSUSHITA ELECTRIC WORKS LTD

    Inventor： ISHIDA TAKUO ,  SAKAI ATSUSHI ,  AIZAWA KOICHI ,  AWAI TAKAYOSHI ,  KAKINOTE KEIJI

    IPC: H01L21/314 ,  H01L21/316 ,  H01L23/15 ,  H01L29/84

    Abstract: PURPOSE:To provide a heat insulation film for a diaphragm structure, which is accompanied by no generation of distortion and destruction and has an excellent heat insulation quality and easy producibility, and to provide a manufacturing method thereof. CONSTITUTION:A heat insulation film 20 for a diaphragm structure and formed in the hollow state of only the periphery thereof supported by a substrate 10, wherein a silicon nitride layer 22 and a plurality of silicon oxide layers 23-25 having different composition ratios of silicon to oxygen are formed in this order from the substrate 10, wherein thereby the residual stresses of the respective layers cancel out to relax the residual stress of the whole of the heat insulation film and to make the prevention of the distortion and destruction thereof possible, and wherein the silicon nitride layer serves effectively as an etching stopper layer when forming the hollow part on the substrate 10 by etching.

    HEAT INSULATING FILM FOR DIAPHRAGM STRUCTURE AND ITS MANUFACTURE
    10.
    发明专利
    HEAT INSULATING FILM FOR DIAPHRAGM STRUCTURE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH05231926A

    公开(公告)日：1993-09-07

    申请号：JP3810792

    申请日：1992-02-25

    Applicant: MATSUSHITA ELECTRIC WORKS LTD

    Inventor： ISHIDA TAKUO ,  SAKAI ATSUSHI ,  AIZAWA KOICHI ,  AWAI TAKAYOSHI ,  KAKINOTE KEIJI

    IPC: G01J1/02 ,  G01J5/02 ,  G01J5/20 ,  H01L21/31 ,  H01L31/08 ,  H01L49/00

    Abstract: PURPOSE:To prevent the excessive distortion or breakage of a heat insulating film and to improve the manufacturing yield by constituting the film of a multi- layered film of oxide silicon with different composition ratios of silicon and oxygen. CONSTITUTION:A heat insulating film 2 is formed on the surface of a substrate 1 formed of silicon or the like. At the central part of the heat insulating film 2, the substrate 1 is etched from below, thus forming an empty room 10. A pair of electrode layers 4 of a conductive metal such as chromium or the like, an a-SiC thermistor layer 5 and an infrared absorbing layer 6 are layered on the heat insulating film 2 at the center of the empty room 10. The heat insulating film 2 is formed of three layers of an SiOx film 20 (x=0.6-1.0), an SiO2 layer 30 and an SiOx layer 20 (x=0.6-1.0) from the closer side to the substrate 1. Therefore, since the residual stress of each layer is different, the residual stress for the whole of the heat insulating film can be reduced. The manufacturing yield is improved.

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