MECHANICAL DEFORMATION AMOUNT SENSOR

    公开(公告)号:CA2430451C

    公开(公告)日:2007-01-16

    申请号:CA2430451

    申请日:2003-05-29

    Abstract: A mechanical deformation amount sensor includes a sensor structure which is formed by a semiconductor substrate or an insulating substrate. The sensor integrally includes a deformation portion deformable when a physical quantity to be detected is applied to the sensor structure. The sensor also includes a support portion for supporting the deformation portion, a carbon nanotube resistance element disposed on the deformation portion so as to be mechanically deformed in response to deformation of the deformation portion and a wiring pattern which is formed in a pattern on the sensor structure so as to be connected to the carbon nanotube resistance element. By applying a voltage to the carbon nanotube resistance element via the wiring pattern, a change of electrical conductivity of the carbon nanotube resistance element upon mechanical deformation of the carbon nanotube resistance element is transduced in an electrical signal.

    SEMICONDUCTOR DEVICE FOR AN OPTICAL CONTROL CIRCUIT

    公开(公告)号:GB2210199B

    公开(公告)日:1992-04-29

    申请号:GB8822067

    申请日:1988-09-20

    Abstract: An optical control circuit is formed by a first transistor, a first resistive element connected between control electrode and first output electrode of the first transistor. The first output electrode forms an emitter or source of the transistor, a second resistive element is connected between the control electrode and second output electrode of the first transistor. The second output electrode forms a collector or drain of the transistor and an array of photovoltaic elements is connected in parallel to the second resistive element. A second transistor has a control electrode connected to the second output electrode of the first transistor. High speed operation of the second transistor can be assured, any noise voltage applied to the control electrode of the second transistor can be effectively bypassed, and the first transistor can be simultaneously formed in a substrate of the second transistor to be integralized therewith.

    19.
    发明专利
    未知

    公开(公告)号:DE3832463A1

    公开(公告)日:1989-04-13

    申请号:DE3832463

    申请日:1988-09-23

    Abstract: An optical control circuit is formed by a first transistor, a first resistive element connected between control electrode and first output electrode of the first transistor. The first output electrode forms an emitter or source of the transistor, a second resistive element is connected between the control electrode and second output electrode of the first transistor. The second output electrode forms a collector or drain of the transistor and an array of photovoltaic elements is connected in parallel to the second resistive element. A second transistor has a control electrode connected to the second output electrode of the first transistor. High speed operation of the second transistor can be assured, any noise voltage applied to the control electrode of the second transistor can be effectively bypassed, and the first transistor can be simultaneously formed in a substrate of the second transistor to be integralized therewith.

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